Photo-induced optical bleaching in Ge12Sb25S63 amorphous chalcogenide thin films: effect of 532 nm laser illumination

The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photooxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

Eu3+-activated SrMoO4 phosphors for white LEDs applications: Synthesis and structural characterization

We report the synthesis of Eu3+-activated SrMoO4 phosphors by the facile nitrate-citrate gel combustion method. Powder XRD and Rietveld refinement data confirmed that these phosphors have a monophasic scheelite-type tetragonal structure with space group I4(1)/a (No. 88). FESEM micrographs indicate the agglomerated spherical particles. FTIR spectra showed four stretching and bending vibrational modes (2A(u) and 2E(u)). UV-Visible absorption spectroscopy illustrated that the optical band gap energy (E-g) values increase with increase in Eu3+ concentration. The host SrMoO4 phosphor exhibited an intense blue emission under UV excitation (368 nm). The Eu3+-activated SrMoO4 phosphors revealed characteristic luminescence due to Eu3+ ion corresponding to D-5(1) -> F-7(J) (J = 1,2) and D-5(0) -> F-7(J) (J = 1,2,3,4) transitions upon 465 nm excitation. The electric dipole transition located at 615 nm (D-5(0) -> F-7(2)) was stronger than the magnetic dipole transition located at 592 nm (D-5(0) -> F-7(1)). Intensity parameters (Omega(2), Omega(4)) and radiative properties such as transition probabilities (A(T)), radiative lifetime (tau(rad)) and branching ratio (beta) of Eu3+-activated SrMoO4 phosphors were calculated using the Judd-Ofelt theory. Based on the CIE chromaticity diagram, these phosphors can be promising materials for the development of blue and orange-red component in white LEDs. (C) 2015 Elsevier B.V. All rights reserved.

Effect of compositional variations on the optical properties of SbxSe60-xS40 thin films

Thin films of SbxSe60-xS40( x= 10, 20, 30, and 40) were deposited by thermal evaporation from the prepared bulk materials on glass substrates held at room temperature. The film compositions were confirmed by using energy dispersive X-ray spectroscopy. X-ray diffraction studies revealed that all the as- deposited films have amorphous structure. The optical constants ( n, k, E-g, E-e, B-1/2) of the films were determined from optical transmittance data, in the spectral range 500-1200 nm, using the Swanepoel method. An analysis of the optical absorption spectra revealed an Urbach's tail in the low absorption region, while in the high absorption region an indirect band gap characterizes the films with different compositions. It was found that the optical band gap energy decreases as the Sb content increases. Finally, in terms of the chemical bond approach, degree of disorderness has been applied to interpret the decrease in the optical gap with increasing Sb content in SbxSe60-xS40 thin films. The changes in X-ray photo electron spectra and Raman shift in the films show compositional dependence. (C) 2015 Elsevier B.V. All rights reserved.

High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In0.55Ga0.45N over non-polar (11-20) a-plane In0.17Ga0.83N epilayer grown on a-plane (11-20) GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of InxGa1-xN alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region. (C) 2015 Author(s).

Photo induced effects on the optical properties of As20Sb20S60 thin films

The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy and Raman spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra and Raman shift supports the optical changes happening in the film due to light exposure.

Gray to transmissive electrochromic switching based on electropolymerized PEDOT-ionic liquid functionalized graphene films

A supporting electrolyte based on lithium perchlorate has been functionalized with graphene (ionic liquid functionalized graphene (IFGR)) by facile electrochemical exfoliation of graphite rods in aq. LiClO4 solution. Poly(3,4-ethylenedioxythiophene) (PEDOT)-IFGR films were prepared by electropolymerization of EDOT monomer with IFGR as supporting electrolyte in ethanol at static potential of 1.5 V. The Raman, SEM, and XPS analysis of PEDOT-IFGR film confirmed the presence of functionalized graphene in the film. The PEDOT-IFGR films showed good electrochemical properties, better ionic and electrical conductivity, significant band gap, and excellent spectroelectrochemical and electrochromic properties. The electrical conductivity of PEDOT-IFGR film was measured as about 3968 S cm(-1). PEDOT-IFGR films at reduced state showed strong and broad absorption in the whole visible region and remarkable absorption at near-IR region. PEDOT-IFGR film showed electrochromic response between transmissive blue and darkish gray at redox potential. The color contrast (%T) between fully reduced and oxidized states of PEDOT-IFGR film is 25 % at lambda (max) of 485 nm. The optical switching stability of PEDOT-IFGR film has retained 80 % of its electroactivity even after 500 cycles.

Piezoelectric properties of individual nanocrystallites of Ba0.85Ca0.15Zr0.1Ti0.9O3 obtained by oxalate precursor route

Nanocrystalline Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) powder was synthesized via the complex oxalate precursor route at a relatively low temperature (800 degrees C/5 h). The phase formation temperature of BCZT at nanoscale was confirmed by thermogravimetric (TG), differential thermal analysis (DTA) followed by X-ray powder diffraction (XRD) studies. Fourier transform infrared (FTIR) spectroscopy was carried out to confirm the complete decomposition of oxalate precursor into BCZT phase. The XRD and profile fitting revealed the coexistence of cubic and tetragonal phases and was corroborated by Raman study. Transmission electron microscopy (TEM) carried out on 800 degrees C and 1000 degrees C/5 h heat treated BCZT powder revealed the crystallite size to be in the range of 20-50 nm and 40-200 nm respectively. The optical band gap for BCZT nanocrystalline powder was obtained using Kubelka Munk function and was found to be around 3.12 +/- 0.02 eV and 3.03 +/- 0.02 eV respectively for 800 degrees C (20-50 nm) and 1000 degrees C/5 h (40-200 nm) heat treated samples. The piezoelectric properties were studied for two different crystallite sizes (30 and 70 nm) using a piezoresponse force microscope (PFM). The d(33) coefficients obtained for 30 nm and 70 nm sized crystallites were 4 pm V-1 and 47 pm V-1 respectively. These were superior to that of BaTiO3 nanocrystal (approximate to 50 nm) and promising from a technological/industrial applications viewpoint.

Li2MnO3: a rare red-coloured manganese(IV) oxide exhibiting tunable red-yellow-green emission

An experimental assessment of Li2MnO3 has been conducted, in conjunction with related Mn(IV) oxides, to investigate its red colour and photoluminescence. Optical absorption spectra revealed strong band gap absorption, with a sharp edge at similar to 610 nm and a transparent region between similar to 610 and similar to 650 nm, giving rise to the red colour of this compound. Octahedral Mn(IV) ligand field transitions have been observed in the excitation spectra of Li2MnO3, corresponding both to Mn(IV) at ideal sites and displaced in Li sites in the rock salt-based layered structure of Li2MnO3. Optical excitation at ligand field transition energies produces tunable emission in the red-yellow-green region, rendering Li2MnO3 a unique Mn(IV) oxide. The honeycomb-ordered LiMn6] units in its structure are probably the origin of both the absorption and the photoluminescent properties of Li2MnO3.

Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study

The variation of normalized electrical resistivity in the system of glasses Ge15Te85-xSnx with (1 <= x <= 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.5-2.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure.

Optical and dielectric study of strontium modified barium zirconium titanate ceramic prepared by high energy ball milling

Strontium modified barium zirconium titanate with general formula Ba1-xSrxZr0.05Ti0.95O3 ceramics have been prepared by solid state and high energy ball milling technique. The X-ray diffraction and Rietveld refinement studies show that all the compositions have single phase symmetry. The composition BaZr0.05Ti0.95O3 shows orthorhombic symmetric with space group Amm2. The structure changes from orthorhombic to tetragonal with strontium doping up to x = 0.3 and with further addition, changes to cubic. The scanning electron micrographs show that the grain size decreases with increase in strontium content. The temperature dependent dielectric behavior shows three phase transition in the parent material which merges with an increase in Sr content The transition temperature and dielectric constant decreases with an increase in Sr concentration. The phase transition becomes more diffused with increment in doping concentration. The ferroelectric behavior of the ceramics is studied by the hysteresis loop. The optical behavior is studied by the UV-visible spectroscopy and found that the optical band gap increases with Sr concentration. (C) 2015 Elsevier B.V. All rights reserved.

Studies on RF Magnetron Sputtered HfO2 Thin Films for Microelectronic Applications

We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compositional, structural, optical and electrical properties of HfO2 films. We also studied the influence of annealing temperature on the structural and electrical properties of optimized HfO2 films of 25 to 30 nm thick. X-ray photoelectron study reveals that the films deposited at 15 SCCM of oxygen flow rate are stoichiometric and have an optical band gap of 5.86 eV. X-ray diffraction indicates that films without oxygen flow are amorphous, and beyond an oxygen flow rate of 5 SCCM exhibit polycrystalline monoclinic structure. At an annealing temperature of 600 degrees C, tetragonal phase was observed besides the monoclinic phase. The dielectric constant of 11 and low leakage currents of 1 x 10(-7) A/cm(2) were achieved for the stoichiometric films. As-deposited films show significant frequency dispersion due to the presence of defect states at the HfO2/Si interface, and it reduces after annealing.

Effect of laser irradiation on the optical properties of As40Sb15Se45 chalcogenide thin films

The exposure with band gap light of thermally evaporated As40Sb15Se45 amorphous film of 800 nm thickness, were found to be accompanied by optical changes. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy and Raman spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra and Raman shift supports the optical changes happening in the film due to light exposure.

Solid-state optical absorption from optimally tuned time-dependent range-separated hybrid density functional theory

We present a framework for obtaining reliable solid-state charge and optical excitations and spectra from optimally tuned range-separated hybrid density functional theory. The approach, which is fully couched within the formal framework of generalized Kohn-Sham theory, allows for the accurate prediction of exciton binding energies. We demonstrate our approach through first principles calculations of one- and two-particle excitations in pentacene, a molecular semiconducting crystal, where our work is in excellent agreement with experiments and prior computations. We further show that with one adjustable parameter, set to produce the known band gap, this method accurately predicts band structures and optical spectra of silicon and lithium fluoride, prototypical covalent and ionic solids. Our findings indicate that for a broad range of extended bulk systems, this method may provide a computationally inexpensive alternative to many-body perturbation theory, opening the door to studies of materials of increasing size and complexity.

Effective Degradation of Aqueous Nitrobenzene Using the SrFeO3-delta Photocatalyst under UV Illumination and Its Kinetics and Mechanistic Studies

In this article, the SrFeO3-delta photocatalyst was synthesized by a solution combustion method and applied for the photocatalytic degradation of aqueous nitrobenzene in the presence and absence of H2O2. The SrFeO3-delta photocatalyst was characterized by XRD, FT-IR, FE-SEM, TEM, TG-DTG, XPS, and UV visible spectroscopy. The band gap energy of SrFeO3-delta was found to be 3.75 eV which lies in the UV region. The XPS results indicate that the oxidation state of Sr and Fe in SrFeO3-delta was 2+ and 3+, respectively, and the surface atomic ratio of Sr and Fe is 0.995. The photocatalytic activity reveals that the degradation of nitrobenzene over the SrFeO3-delta catalyst itself (UV/SFO) is superior compared to SrFeO3-delta in the presence of H2O2 (UV/SFO/H2O2) with a degradation efficiency of 99-96%. The degradation of nitrobenzene obeys first-order kinetics in both UV/SFO and UV/SFO/H2O2 processes. The decrease in degradation efficiency with UV/SFO/H2O2 was attributed due to the formation of strontium carbonate on the photocatalyst surface.

Bio-inspired route for the synthesis of spherical shaped MgO:Fe3+ nanoparticles: Structural, photoluminescence and photocatalytic investigation

MgO:Fe3+ (0.1-5 mol%) nanoparticles (NPs) were synthesized via eco-friendly, inexpensive and simple low temperature solution combustion route using Aloe vera gel as fuel. The final products were characterized by SEM, TEM and HRTEM. PXRD data and Rietveld analysis revealed the formation of cubic system. The influence of Fe3+ ion concentration on the structure morphology, UV absorption, PL emission and photocatalytic activity of MgO:Fe3+ NPs were investigated. The yellow emission with CIE chromaticity coordinates (0.44, 0.52) and average correlated color temperature value was found to be 3540 K which corresponds to warm light of NPs. The control of Fe3+. on MgO matrix influences the photocatalytic decolorization of methylene blue (MB) under UV light. The enhanced photocatalytic activity of MgO:Fe3+ (4 mol%) was attributed to dopant concentration, effective crystallite size, textural properties, decreased band gap and capability for reducing the electron hole pair recombination. Further, the trends of inhibitory effect in the presence of different radical scavengers were explored. These findings open up new avenues for the exploration of Fe-doped MgO in eco-friendly water applications and in the process of display devices. (C) 2015 Elsevier B.V. All rights reserved.