227 resultados para network measures


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A transform approach to network coding was in-troduced by Bavirisetti et al. (arXiv:1103.3882v3 [cs.IT]) as a tool to view wireline networks with delays as k-instantaneous networks (for some large k). When the local encoding kernels (LEKs) of the network are varied with every time block of length k >1, the network is said to use block time varying LEKs. In this work, we propose a Precoding Based Network Alignment (PBNA) scheme based on transform approach and block time varying LEKs for three-source three-destination multiple unicast network with delays (3-S3-D MUN-D). In a recent work, Menget al. (arXiv:1202.3405v1 [cs.IT]) reduced the infinite set of sufficient conditions for feasibility of PBNA in a three-source three-destination instantaneous multiple unicast network as given by Das et al. (arXiv:1008.0235v1 [cs.IT]) to a finite set and also showed that the conditions are necessary. We show that the conditions of Meng et al. are also necessary and sufficient conditions for feasibility of PBNA based on transform approach and block time varying LEKs for 3-S3-D MUN-D.

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A power scalable receiver architecture is presented for low data rate Wireless Sensor Network (WSN) applications in 130nm RF-CMOS technology. Power scalable receiver is motivated by the ability to leverage lower run-time performance requirement to save power. The proposed receiver is able to switch power settings based on available signal and interference levels while maintaining requisite BER. The Low-IF receiver consists of Variable Noise and Linearity LNA, IQ Mixers, VGA, Variable Order Complex Bandpass Filter and Variable Gain and Bandwidth Amplifier (VGBWA) capable of driving variable sampling rate ADC. Various blocks have independent power scaling controls depending on their noise, gain and interference rejection (IR) requirements. The receiver is designed for constant envelope QPSK-type modulation with 2.4GHz RF input, 3MHz IF and 2MHz bandwidth. The chip operates at 1V Vdd with current scalable from 4.5mA to 1.3mA and chip area of 0.65mm2.