Dielectric Studies of laser ablated Ca doped BaTiO3 thin films

Recently, there has been growing interest in Ca modified BaTiO3 structures due to their larger electro-optic coefficients for their use in optical storage of information over conventional BaTiO3 crystals. Barium Calcium Titanate (BCT) shows promising applications in advanced laser systems, optical interconnects and optical storage devices. BaTiO3 thin films of varied Ca (3 at. % - 15 at. %) doping were deposited using pulsed laser ablation (KrF excimer laser) technique over Pt/Si substrates. The stoichiometric and the compositional analysis were carried out using EDAX and SIMS. The dielectric studies were done at the frequency regime of 40 Hz to 100 kHz at different ambient temperatures from 200 K to 600 K. The BCT thin films exhibited diffuse phase transition, which was of a typical non lead relaxor behavior and had high dielectric constant and low dielectric loss. The phase transition for the different compositions of BCT thin films was near the room temperature, showing a marked departure from the bulk phase transition. The C - V and the hysteresis behavior confirmed the ferroelectric nature below the phase transition and paraelectric at the room temperature.

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

The ω Phase Formation during Laser Cladding and Remelting of Quasicrystal Forming AlCuFe on Pure Aluminum

We report the formation ω phase in the remelted layers during laser cladding and remelting of quasicrystal forming Al65Cu23.3Fe11.7 alloy on pure aluminum. The ω phase is absent in the clad layers. In the remelted layer, the phase nucleates at the periphery of the primary icosahedral phase particles. A large number of ω phase particles forms enveloping the icosahedral phase growing into aluminum rich melt, which solidify as α-Al solid solution. On the other side it develops an interface with aluminum. A detailed transmission electron microscopic analysis shows that ω phase exhibits orientation relationship with icosahedral phase. The composition analysis performed using energy dispersive x-ray analyzer suggests that this phase has composition higher aluminum than the icosahedral phase. The analysis of the available phase diagram information indicates that the present results represent large departure from equilibrium conditions. A possible scenario of the evolution of the ω phase has been suggested.

Quasicrystalline Coatings Through Laser Processing: A Study on Process Optimisation and Microstructure Evolution

Composite coatings containing quasicrystalline (QC) phases in Al-Cu-Fe alloys were prepared by laser cladding using a mixture of the elemental powders. Two substrates, namely pure aluminum and an Al-Si alloy were used. The clad layers were remelted at different scanning velocities to alter the growth conditions of different phases. The process parameters were optimized to produce quasicrystalline phases. The evolution of the microstructure in the coating layer was characterized by detailed microstructural investigation. The results indicate presence of quasicrystals in the aluminum substrate. However, only approximant phase could be observed in the substrate of Al-Si alloys. It is shown that there is a significant transport of Si atoms from the substrate to the clad layer during the cladding and remelting process. The hardness profiles of coatings on aluminum substrate indicate a very high hardness. The coating on Al-Si alloy, on the other hand, is ductile and soft. The fracture toughness of the hard coating on aluminum was obtained by nano-indentation technique. The K1C value was found to be 1.33 MPa m1/2 which is typical of brittle materials.

Growth and study of BaZrO3 thin films by pulsed excimer laser ablation

Thin films of BaZrO3 (BZ) were grown using a pulsed laser deposition technique on platinum coated silicon substrates. Films showed a polycrystalline perovskite structure upon different annealing procedures of in-situ and ex-situ crystallization. The composition analyses were done using Energy dispersive X-ray analysis (EDAX) and Secondary ion mass spectrometry (SIMS). The SIMS analysis revealed that the ZrO2 formation at the right interface of substrate and the film leads the degradation of the device on the electrical properties in the case of ex-situ crystallized films. But the in-situ films exhibited no interfacial formation. The dielectric properties have been studied for the different temperatures in the frequency regime of 40 Hz to 100kHz. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are correspond to oxygen vacancy motion. The electrical modulus is fitted to a stretched exponential function and the results clearly indicate the presence of the non-Debye type of dielectric relaxation in these materials.

Dielectric Properties of Pulsed Excimer Laser Ablated BaBi2Nb2O9 Thin Films

The dielectric response of BaBi2Nb2O9 (BBN) thin films has been studied as a function of frequency over a wide range of temperatures. Both dielectric constant and loss tangent of BBN thin films showed a ‘power law’ dependence with frequency, which was analyzed using the Jonscher's universal dielectric response model. Theoretical fits were utilized to compare the experimental results and also to estimate the value of temperature dependence parameters such as n(T) and a(T) used in the Jonscher's model. The room temperature dielectric constant (ε') of the BBN thin films was 214 with a loss tangent (tanδ) of 0.04 at a frequency of 100 kHz. The films exhibited the second order dielectric phase transition from ferroelectric to paraelectric state at a temperature of 220 °C. The nature of phase transition was confirmed from the temperature dependence of dielectric constant and sponteneous polarization,respectively. The calculated Currie constant for BBN thin films was 4 × 105°C.

Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

A study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

A Study of Nanostructures of Thin Films in B–C–N System Produced by Pulsed Laser Deposition and Nitrogen Ion-Beam-Assisted Pulsed Laser Deposition

We report the synthesis of thin films of B–C–N and C–N deposited by N+ ion-beam-assisted pulsed laser deposition (IBPLD) technique on glass substrates at different temperatures. We compare these films with the thin films of boron carbide synthesized by pulsed laser deposition without the assistance of ion-beam. Electron diffraction experiments in the transmission electron microscope shows that the vapor quenched regions of all films deposited at room temperature are amorphous. In addition, shown for the first time is the evidence of laser melting and subsequent rapid solidification of B4C melt in the form of micrometer- and submicrometer-size round particulates on the respective films. It is possible to amorphize B4C melt droplets of submicrometer sizes. Solidification morphologies of micrometer-size droplets show dispersion of nanocrystallites of B4C in amorphous matrix within the droplets. We were unable to synthesize cubic carbon nitride using the current technique. However, the formation of nanocrystalline turbostratic carbo- and boron carbo-nitrides were possible by IBPLD on substrate at elevated temperature and not at room temperature. Turbostraticity relaxes the lattice spacings locally in the nanometric hexagonal graphite in C–N film deposited at 600 °C leading to large broadening of diffraction rings.

An asymmetric cascaded H-Bridge inverters for generating 12-sided polygonal space vector diagrams for Motor drives

A new topology of asymmetric cascaded H-Bridge inverter is presented in this paper It consists of two cascaded H-bridge cells per phase. They are fed from isolated dc sources having a dc bus ratio of 1:0.366. Out of many space vectors possible from this circuit, only those are chosen that lie on 12-sided polygons. Thus, the overall space vector diagram produced by this circuit consists of multiple numbers of 12-sided polygons. With a proper PWM timing calculations based on these selected space vectors, it is possible to eliminate all the 6n +/- 1, (n = odd) harmonics from the phase voltage under all operating conditions. The switching frequency of individual H-Bridge cells is also substantially low. Extensive experimental results have been presented in this paper to validate the proposed concept.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.