Phonons and fractons in sol-gel alumina: Raman study

We report Raman scattering from the boehmite, gamma-, delta- and alpha-phases of the alumina gel. Samples are characterized by transmission and scanning electron microscopy, X-ray diffraction and density measurements. The main Raman line in the boehmite phase is red-shifted as well as asymmetrically broadened with respect to that in the crystalline boehmite, signifying the nanocrystalline nature of the gel. Raman signatures are absent in the gamma- and delta-phases due to the disorder in cation vacancies. We also show that low frequency Raman scattering from the boehmite phase resembles that from a fractal network, characterized in terms of fraction dimension ($) over tilde d. Taking Hausdorff dimension D of the boehmite gel to be 2.5 (or 3.0), the value of ($) over tilde d is 1.33 +/- 0.02 (or 1.44 +/- 0.02), which is close to the theoretically predicted value of 4/3.

Raman study of pressure-induced phase transitions in RbIO4

The pressure dependence of the Raman spectra of RbIO4 has been investigated up to 27.3 GPa at room temperature using the diamond-anvil cell. The changes in the Raman spectra show clearly two pressure-induced phase transitions at 5.3 GPa from scheelite to pseudoscheelite and at 7.2 GPa from pseudoscheelite to wolframite. There is an indication of a possible phase transition at 18.3 GPa from wolframite to a denser complex structure. These transitions follow the same sequence as in other compounds such as alkali perrehenates, which crystallize in the scheelite structure. The systematics in pressure-induced phase transitions in alkali periodates is discussed.

Microstructural and dielectric properties of KCl-added bismuth vanadate ceramics

The effect of KCI addition on the microstructural, structural and dielectric properties of bismuth vanadate, Bi2VO5.5 (BiV) has been examined. The average grain size of BN ceramics increases with increase in KCl content (from an average grain size of TO to 80 mu m) as a result of the increased liquid-phase formation of KCI, at the grain boundaries. Differential scanning calorimetry (DSC) carried out on the KCl-added samples indicates an upward shift in the transition temperature (T-c), from 723 K (for BN) to 734 K (for 5 mol% KCl-added BiV). On further increase in the KCI content, T-c shifts down to about 722 K for 10 mol%. This trend is consistent with that of the lattice strain data. The relative permittivity as well as the dielectric loss decrease by more than half of the original values upon the addition of KCI. The relative permittivities of the KCl-added ceramics are comparable with the values predicted by the logarithmic mixture rule. Impedance analyses suggest that the grain boundary resistance of the KCl-added BiV ceramics is higher by two orders of magnitude than that of BN ceramics. The KCl-added BN ceramics exhibit ferroelectric domains and the domain density decreases as the grain boundary region is approached.

Phenomenological aspects of phase fluctuation in high Tc superconductors: Cooper pair droplets

We point out how fluctuation of the phase of the superconducting order parameter can play a key role in our understanding of high Te superconductors. A simple universal criterion is given which illustrates why all oxide superconductors in contrast to classical superconductors ought to behave as a lattice of cooper pairs. T-c is to be thought of as the temperature of phase coherence or the temperature above which the lattice of Cooperpair 'melts' into a phase of Cooper-pair droplets that starts forming at T approximate to T-* . This is the pseudo-gap region. Quantum fluctuation of the phase predicts a superconductor to insulator phase transition for all underdoped materials.

The two-step positive temperature coefficient in resistance characteristics of n-(Ba,Pb)TiO3 ceramics created through inclusion of grain boundary modifier additives

Donor-doped n-(Ba,Pb)TiO3 polycrystalline ceramics exhibit distinctly two-step positive temperature coefficient of resistance (PTCR) characteristics when formulated with suitable combinations of B2O3 and Al2O3 as grain boundary modifiers by heterogeneous addition. B2O3 or Al2O3 when added singularly resulted in either steep or broad PTCR jumps respectively across the phase transition. The two-step PTCR is attributed to the activation of the acceptor states, created through B2O3 and Al2O3, for various temperature regimes above the Curie point (T-c). The changing pattern of trap states is evident from the presence of Ti4+-O--Al3+ type hole centres in the grain boundary layer regions, identified in the electron paramagnetic resonance (EPR) spectra. That charge redistribution occurs among the inter-band gap defect states on crossing the Curie temperature is substantiated by the temperature coefficient in the EPR results. Capacitance-voltage results clearly show that there is an increase in the density of trap states with the addition of B2O3 and Al2O3. The spread in energy values of these trap states is evident from the large change in barrier height (phi similar or equal to 0.25-0.6 eV) between 500 and 650 K.