Thermoelectric Properties of In-Doped Cu2ZnGeSe4

Recently, much research has been focused on finding new thermoelectric materials. Cu-based quaternary chalcogenides that belong to A(2)BCD(4) (A = Cu; B = Zn, Cd; C = Sn, Ge; D = S, Se, Te) are wide band gap materials and one of the potential thermoelectric materials due to their complex crystal structures. In this study, In-doped quaternary compounds Cu2ZnGe1-xInxSe4 (x = 0, 0.025, 0.05, 0.075, 0.1) were prepared by a solid state synthesis method. Powder x-ray diffraction patterns of all the samples showed a tetragonal crystal structure (space group I-42m) of the main phase with a trace amount of impurity phases, which was further confirmed by Rietveld analysis. The elemental composition of all the samples showed a slight deviation from the nominal composition with the presence of secondary phases. All the transport properties were measured in the temperature range 373-673 K. The electrical resistivity of all the samples initially decreased up to similar to 470 K and then increased with increase in temperature upto 673 K, indicating the transition from semiconducting to metallic behavior. Positive Seebeck coefficients for all the samples revealed that holes are the majority carriers in the entire temperature range. The substitution of In3+ on Ge4+ introduces holes and results in the decrease of resistivity as well as the Seebeck coefficient, thereby leading to the optimization of the power factor. The lattice thermal conductivity of all the samples decreased with increasing temperature, indicating the presence of phonon-phonon scattering. As a result, the thermoelectric figure of merit (zT) of the doped sample showed an increase as compared to the undoped compound.

Full current statistics for a disordered open exclusion process

We consider the nonabelian sandpile model defined on directed trees by Ayyer et al. (2015 Commun. Math. Phys. 335 1065). and restrict it to the special case of a one-dimensional lattice of n sites which has open boundaries and disordered hopping rates. We focus on the joint distribution of the integrated currents across each bond simultaneously, and calculate its cumulant generating function exactly. Surprisingly, the process conditioned on seeing specified currents across each bond turns out to be a renormalised version of the same process. We also remark on a duality property of the large deviation function. Lastly, all eigenvalues and both Perron eigenvectors of the tilted generator are determined.

Thermoelectric properties of indium doped Cu2CdSnSe4

Recently, research in copper-based quaternary chalcogenide materials has been found to be interesting for the study of thermoelectric properties because of their low thermal conductivity due to complex crystal structures. In the present work, stoichiometric quaternary chalcogenide compounds Cu2CdSn1-xInxSe4(x = 0, 0.025, 0.05, 0.1) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I (4) over bar 2m of the main phase. In addition to this phase, a small amount of impurity phase CdSe was present in all the samples, as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by an Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 350 K-723 K. The positive Seebeck coefficient of all the compounds indicate that the majority carriers are holes. The Seebeck coefficient and electrical resistivity did not follow the trend in the expected manner with In doping, which could be influenced by the presence of the impurity phases. The total thermal conductivity of all the samples was dominated by the lattice thermal conductivity, while the electronic contribution was very small due to the low carrier contribution. A lattice thermal conductivity decrease with an increase of temperature indicates the dominance of phonon-phonon scattering at higher temperatures. The maximum figure of merit zT = 0.30 at 723 K was obtained for the compound Cu2CdSn0.9In0.1Se4. (C) 2016 Elsevier Ltd. All rights reserved.

Maximum Spreading of Liquid Drops Impacting on Groove-Textured Surfaces: Effect of Surface Texture

Maximum, spreading of liquid drops impacting on solid surfaces textured with unidirectional parallel grooves is studied for drop Weber number in the range 1-100 focusing on the role of texture geometry and wettability. The maximum spread factor of impacting drops measured perpendicular to grooves; beta(m,perpendicular to) is seen to be less than, that:measured parallel to grooves, beta(m,perpendicular to).The difference between beta(m,perpendicular to), and beta(m,parallel to) increases with drop impact velocity. This deviation of beta(m,perpendicular to) from beta(m,parallel to) is analyzed by considering the possible mechanisms, correspond, ing to experimental observations (1) impregnation of drop into the grooves, (2) convex shape of liquid vapor interface near contact line at maximum spreading, and (3) contact line pinning of spreading drop at the pillar edges by incorporating them into an energy conservation-based model. The analysis reveals that contact line pinning offers a physically meaningful justification of the observed: deviation of beta(m,perpendicular to) from beta(m,parallel to) compared to other possible candidates. A unified model, incorporating all the above-mentioned mechanisms, is formulated, which predicts beta(m,perpendicular to) on several groove-textured surfaces made of intrinsically hydrophilic and hydrophobic materials with an average error of 8.3%. The effect of groove-texture geometrical parameters,on maximum drop spreading is explained using this unified model. A special case of the unified model, with contact line pinning, absent, predicts beta(m,parallel to) with an average error of 6.3%.

FAST AND ACCURATE BILATERAL FILTERING USING GAUSS-POLYNOMIAL DECOMPOSITION

The bilateral filter is a versatile non-linear filter that has found diverse applications in image processing, computer vision, computer graphics, and computational photography. A common form of the filter is the Gaussian bilateral filter in which both the spatial and range kernels are Gaussian. A direct implementation of this filter requires O(sigma(2)) operations per pixel, where sigma is the standard deviation of the spatial Gaussian. In this paper, we propose an accurate approximation algorithm that can cut down the computational complexity to O(1) per pixel for any arbitrary sigma (constant-time implementation). This is based on the observation that the range kernel operates via the translations of a fixed Gaussian over the range space, and that these translated Gaussians can be accurately approximated using the so-called Gauss-polynomials. The overall algorithm emerging from this approximation involves a series of spatial Gaussian filtering, which can be efficiently implemented (in parallel) using separability and recursion. We present some preliminary results to demonstrate that the proposed algorithm compares favorably with some of the existing fast algorithms in terms of speed and accuracy.