Anomalous X-ray scattering study of local structures in the superionic conducting glass (AgBr)0.4 (Ag2O)0.3 (GeO2)0.3

The local structural information in the near-neighbor region of superionic conducting glass (AgBr)0.4(Ag2O)0.3(GeO2)0.3 has been estimated from the anomalous X-ray scattering (AXS) measurements using Ge and Br K absorption edges. The possible atomic arrangements in the near-neighbor region of this glass were obtained by coupling the results with the least-squares variational method so as to reproduce two differential intensity profiles for Ge and Br as well as the ordinary scattering profile. The coordination number of oxygen around Ge is found to be 3.6 at a distance of 0.176 nm, suggesting the GeO4 tetrahedral unit as the probable structural entity in this glass. Moreover, the coordination number of Ag around Br is estimated as 6.3 at a distance of 0.284 nm, suggesting an arrangement similar to that in crystalline AgBr.

Relation between Local Structure and Glass Forming Ability of Liquid Alloys

An attempt has been made to describe the glass forming ability (GFA) of liquid alloys, using the concepts of the short range order (SRO) and middle range order (MRO) characterizing the liquid structure.A new approach to obtain good GFA of liquid alloys is based on the following four main factors: (1) formation of new SRO and competitive correlation with two or more kinds of SROs for crystallization, (2) stabilization of dense random packing by interaction between different types of SRO, (3) formation of stable cluster (SC) or middle range order (MRO) by harmonious coupling of SROs, and (4) difference between SRO characterizing the liquid structure and the near-neighbor environment in the corresponding equilibrium crystalline phases. The atomic volume mismatch estimated from the cube of the atomic radius was found to be a close relation with the minimum solute concentration for glass formation. This empirical guideline enables us to provide the optimum solute concentration for good GFA in some ternary alloys. Model structures, denoted by Bernal type and the Chemical Order type, were again tested in the novel description for the glass structure as a function of solute concentration. We illustrated the related energetics of the completion between crystal embryo and different types of SRO. Recent systematic measurements also provide that thermal diffusivity of alloys in the liquid state may be a good indicator of their GFA.

La-Doped Ba2In2O5 Electrolyte: Pechini Synthesis, Microstructure, Electrical Conductivity, and Application for CO Gas Sensing

Dense (Ba1―xLax)2In2O5+x (BLIO) electrolytes with different compositions (x = 0.4, 0.5, 0.6) were fabricated using powders obtained by the Pechini method. The formation of BLIO powders was investigated by using X-ray diffraction and scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy. The calcination temperature and time were optimized. The sintered (Ba1―xLax)2In2O5+x electrolytes showed a relative density greater than ∼97%, and the major phase of three electrolyte compositions was indexed as a cubic perovskite. The electrical conductivity of BLIO ceramics at elevated temperatures in air was measured by ac-impedance spectroscopy. The activation energies for conduction in BLIO were 102 kJ mol―1 between 473 and 666 K and 118 kJ mol―1 between 769 and 873 K, which are comparable to that for 8 mol % yttria-stabilized cubic zirconia. Mixed-potential gas sensors utilizing BLIO-based electrolytes exhibited good sensitivity to different CO concentrations from ∼100 to ∼500 ppm and excellent selectivity to methane at around 873 K.

High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures

Modulation-doped two-dimensional hole gas structures consisting of a strained germanium channel on relaxed Ge0.7Si0.3 buffer layers were grown by molecular-beam epitaxy. Sample processing was optimized to substantially reduce the contribution from the parasitic conducting layers. Very high hall mobilities of 1700 cm2/V s for holes were observed at 295 K which are the highest reported to date for any kind of p-type silicon-based heterostructures. Hall measurements were carried out from 13 to 300 K to determine the temperature dependence of the mobility and carrier concentration. The carrier concentration at room temperature was 7.9×1011 cm−2 and decreased by only 26% at 13 K, indicating very little parallel conduction. The high-temperature mobility obeys a T−α behavior with α∼2, which can be attributed to intraband optical phonon scattering.

Mode-coupling glass transition in a fluid confined by a periodic potential

We show that a fluid under strong spatially periodic confinement displays a glass transition within mode-coupling theory at a much lower density than the corresponding bulk system. We use fluctuating hydrodynamics, with confinement imposed through a periodic potential whose wavelength plays an important role in our treatment. To make the calculation tractable we implement a detailed calculation in one dimension. Although we do not expect simple 1d fluids to show a glass transition, our results are indicative of the behavior expected in higher dimensions. In a certain region of parameter space we observe a three-step relaxation reported recently in computer simulations [S. H. Krishnan, Ph.D. thesis, Indian Institute of Science (2005); Kim et al., Eur. Phys. J. Special Topics 189, 135 (2010)] and a glass-glass transition. We compare our results to those of Krakoviack [Phys. Rev. E 75, 031503 (2007)] and Lang et al. [Phys. Rev. Lett. 105, 125701 (2010)].

Thermoelectric properties of indium filled and germanium doped Co4Sb12 skutterudites

In-filled and Ge-doped Co4Sb12 skutterudites materials were synthesized by an induction melting process which was followed by annealing at 650 degrees C for 7 days. A structural, compositional, and morphological study was carried out by X-ray diffraction (XRD), electron probe micro analysis (EPMA), and scanning electron microscopy (SEM). The formation of a single skutterudite phase (delta-CoSb3) was confirmed by XRD and the composition of all the samples was verified by EPMA. The homogeneity and morphology of the samples was observed by potential Seebeck microprobe (PSM) and SEM, respectively. The PSM result confirmed the inhomogeneity of the samples. The temperature dependence of the Seebeck coefficient, electrical conductivity, and thermal conductivity were measured in the temperature range of 300-650 K. The samples of In0.16Co4Sb12-xGex (x = 0.05, 0.1, and 0.2) show a negative Seebeck coefficient confirming an n-type conductivity and the In0.16Co4Sb11.7Ge0.3 sample shows a positive Seebeck coefficient confirming a p-type conductivity. There was a change in the Seebeck coefficient from an n-type to a p-type at the doping concentration of x = 0.3 due to the excess Ge which increases in hole carrier concentration. Electrical conductivity decreases with an increase in Ge doping concentrations and with increases in temperature due to the bipolar effect. Thermal conductivity increases with an increase in carrier concentration and decreases when the temperature is increased. The highest ZT = 0.58 was achieved by In0.16Co4 Sb11.95Ge0.05 at 673K and In-filled and Ge-doped Co4Sb12 was not effective in improving the figure of merit. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677982]

Characterization of the dynamics of glass-forming liquids from the properties of the potential energy landscape

We develop a framework for understanding the difference between strong and fragile behavior in the dynamics of glass-forming liquids from the properties of the potential energy landscape. Our approach is based on a master equation description of the activated jump dynamics among the local minima of the potential energy (the so-called inherent structures) that characterize the potential energy landscape of the system. We study the dynamics of a small atomic cluster using this description as well as molecular dynamics simulations and demonstrate the usefulness of our approach for this system. Many of the remarkable features of the complex dynamics of glassy systems emerge from the activated dynamics in the potential energy landscape of the atomic cluster. The dynamics of the system exhibits typical characteristics of a strong supercooled liquid when the system is allowed to explore the full configuration space. This behavior arises because the dynamics is dominated by a few lowest-lying minima of the potential energy and the potential energy barriers between these minima. When the system is constrained to explore only a limited region of the potential energy landscape that excludes the basins of attraction of a few lowest-lying minima, the dynamics is found to exhibit the characteristics of a fragile liquid.

Chemical and shifted mechanical thresholds in Al-Ge-Te glass system

We report the results of the electrical switching studies performed on the bulk Al20GexTe80-x (2.5 less than or equal to x less than or equal to 15) chalcogenide glasses. The well known topological features, mechanical and chemical thresholds are observed. Mechanical threshold is seen at a mean coordination number of atoms, < r > = 2.50 (x = 5) a clear shift rom the mean field value of < r > = 2.4 whereas the chemical threshold is observed at < r > = 2.65 (x = 12.5) as predicted by the chemically ordered covalent network model These experiments are a sequel to similar experiments on Al20AsxTe80-x glasses in which mechanical threshold was seen at < r > = 2.60 and no chemical threshold was observed These results am well understood by a chemical bond picture developed in this article.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

Photoluminescence study of mixed doped Ge-Se-In-Bi glasses

Photoluminescence studies, carried out using the Fourier Transform method rather than the conventional monochromator-dispersion method,are reported on glassy samples of indium-bismuth mixed doped Ge (10) Se(90-x-y) In (x) Bi (y) system (x,y = 5,10). The amorphous Bi2Se3 is found to be n-type like the crystalline counterpart. The possible contributions from microscopic cluster-level phase separation of Bi2Se3 and from the defects to the change in conductivity from p- to n- typein this system is discussed. The similar situation in related systems is also pointed out.

Evidence for low temperature glassy behavior in La0.5Sr0.5CoO3

We report the observed low temperature spin glass like feature in the optimally doped La0.5Sr0.5CoO3 ferromagnetic system. The characteristic of glassy behavior has been identified by noting (i) the frequency-dependent shift of the low temperature hump position in the out of phase ac susceptibility component; (ii) evolution of freezing temperature with dc biasing field that adheres to de Almeida-Thouless relation; (iii) memory effect; and (iv) sluggish magnetic relaxation. The results of magnetic measurements demonstrate that neither the inter-cluster interaction nor the spin disorder at the interface between ferromagnetic clusters is responsible for the manifestation of such collective glassy behavior. Rather, it is believed to arise from a distinct cluster glass like phase that possibly coexists with the dominant ferromagnetic phase. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684610]

Nanoindentation response of an ion irradiated Zr-based bulk metallic glass

Nanoindentation experiments were conducted on a Ni+ ion-irradiated Zr-based bulk metallic glass (BMG). The irradiation was carried out using 2.5, 5, 10 and 15 MeV ions and a flux of similar to 10(16) ions/cm(2). Post mortem imaging of the indents reveals a transition in the deformation mechanism of the irradiated regions from heterogeneous shear banding to homogeneous flow. Additionally, the load-displacement curves exhibit a transition from serrated to continuous flow with increasing severity of irradiation damage. The stress-strain response obtained from micro-pillar compression experiments complements the indentation response exhibiting a decrease in the flow stress and an `apparent' strain hardening at the lowest irradiation damage investigated, which is not observed in the as-cast alloy. (C) 2011 Elsevier B.V. All rights reserved.

Effect of temperature on the plastic zone size and the shear band density in a bulk metallic glass

High temperature bonded interface indentation experiments are carried out on a Zr based bulk metallic glass (BMG) to examine the plastic deformation characteristics in subsurface deformation zone under a Vickers indenter. The results show that the shear bands are semi-circular in shape and propagate in radial direction. At all temperatures the inter-band spacing along the indentation axis is found to increase with increasing distance from the indenter tip. The average shear band spacing monotonically increases with temperature whereas the shear band induced plastic deformation zone is invariant with temperature. These observations are able to explain the increase in pressure sensitive plastic flow of BMGs with temperature. (C) 2011 Elsevier B.V. All rights reserved.