Optical, electrical and dielectric properties of TiO(2)-SiO(2) films prepared by a cost effective sol-gel process

Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.

Ferromagnetic transition and specific heat of Pr(0.6)Sr(0.4)MnO(3)

The critical properties of orthorhombic Pr(0.6)Sr(0.4)MnO(3) single crystals were investigated by a series of static magnetization measurements along the three different crystallographic axes as well as by specific heat measurements. A careful range-of-fitting-analysis of the magnetization and susceptibility data obtained from the modified Arrott plots shows that Pr(0.6)Sr(0.4)MnO(3) has a very narrow critical regime. Nevertheless, the system belongs to the three-dimensional (3D) Heisenberg universality class with short-range exchange. The critical exponents obey Widom scaling and are in excellent agreement with the single scaling equation of state M(H,epsilon) = vertical bar epsilon vertical bar(beta) f(+/-)(H/vertical bar epsilon vertical bar((beta+gamma)); with f(+) for T > T(c) and f(-) for T < T(c). A detailed analysis of the specific heat that account for all relevant contributions allows us to extract and analyze the contribution related to the magnetic phase transition. The specific heat indicates the presence of a linear electronic term at low temperatures and a prominent contribution from crystal field excitations of Pr. A comparison with data from literature for PrMnO(3) shows that a Pr-Mn magnetic exchange is responsible for a sizable shift in the lowest lying excitation.

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO(2) thin films by DC magnetron sputtering

Titanium dioxide (TiO(2)) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO(2) films has been analyzed by X-ray photoelectron spectroscopy. The TiO(2) films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO(2) into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO(2)/p-Si have been fabricated. The leakage current density of unbiased films was 1 x10(-6) A/cm(2) at a gate bias voltage of 1.5 V and it was decreased to 1.41 x 10(-7) A/cm(2) with the increase of substrate bias voltage to -150 V owing to the increase in thickness of interfacial layer of SiO(2). Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at -150 V. The capacitance at 1 MHz for unbiased films was 2.42 x 10(-10) F and it increased to 5.8 x 10(-10) F in the films formed at substrate bias voltage of -150 V. Dielectric constant of TiO(2) films were calculated from capacitance-voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at -150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to -150 V. (C) 2011 Elsevier B. V. All rights reserved.

Tip Motion Control and Scanning of a Reorientable Micromanipulator With Axially Located Tip

Two-axis micromanipulators, whose tip orientation and position can be controlled in real time in the scanning plane, enable versatile probing systems for 2.5-D nanometrology. The key to achieve high-precision probing systems is to accurately control the interaction point of the manipulator tip when its orientation is changed. This paper presents the development of a probing system wherein the deviation in the end point due to large orientation changes is controlled to within 10 nm. To achieve this, a novel micromanipulator design is first proposed, wherein the end point of the tip is located on the axis of rotation. Next, the residual tip motion caused by fabrication error and actuation crosstalk is modeled and a systematic method to compensate it is presented. The manipulator is fabricated and the performance of the developed scheme to control tip position during orientation change is experimentally validated. Subsequently, the two-axis probing system is demonstrated to scan the full top surface of a micropipette down to a diameter of 300 nm.

Spatial filter based 3D resolution improvement and polarization properties of multiphoton multiple-excitation-spot-optical microscopy

Three-dimensional (3D) resolution improvement in multi-photon multiple-excitation-spot-optical microscopy is proposed. Specially designed spatial filter is employed for improving the overall 3D resolution of the imaging system. An improvement up to a factor of 14.5 and sub-femto liter volume excitation is achieved. The system shows substantial sidelobe reduction (<4%) due to the non-linear intensity dependence of multiphoton process. Polarization effect on x-oriented and freely rotating dipoles shows dramatic change in the field distribution at the focal-plane. The resulting point-spread function has the ability to produce several strongly localized polarization dependent field patterns which may find applications in optical engineering and bioimaging.

Comparison of HMM and SDTW for Tamil handwritten character recognition

In this paper, we compare the experimental results for Tamil online handwritten character recognition using HMM and Statistical Dynamic Time Warping (SDTW) as classifiers. HMM was used for a 156-class problem. Different feature sets and values for the HMM states & mixtures were tried and the best combination was found to be 16 states & 14 mixtures, giving an accuracy of 85%. The features used in this combination were retained and a SDTW model with 20 states and single Gaussian was used as classifier. Also, the symbol set was increased to include numerals, punctuation marks and special symbols like $, & and #, taking the number of classes to 188. It was found that, with a small addition to the feature set, this simple SDTW classifier performed on par with the more complicated HMM model, giving an accuracy of 84%. Mixture density estimation computations was reduced by 11 times. The recognition is writer independent, as the dataset used is quite large, with a variety of handwriting styles.

Thermodynamic, kinetic and electrical switching studies on Si(15)Te(85-x)In(x) glasses: Observation of Boolchand intermediate phase

An interesting topic for quite some time is an intermediate phase observed in chalcogenide glasses, which is related to network connectivity and rigidity. This phenomenon is exhibited by Si-Te-In glasses also. It has been addressed here by carrying out detailed thermal investigations by using Alternating Differential Scanning Calorimetry technique. An effort has also been made to determine the stability of these glasses using the data obtained from different thermodynamic quantities and crystallization kinetics of these glasses. Electrical switching behavior by recording I-V characteristics and variation of switching voltages with indium composition have been studied in these glasses for phase change memory applications. (C) 2011 Elsevier Inc. All rights reserved.

Simulation and experimental study on compositional evolution of Li-Co in LiCoO2 thin films during sputter deposition

The compositional evolution in sputter deposited LiCoO2 thin films is influenced by process parameters involved during deposition. The electrochemical performance of these films strongly depends on their microstructure, preferential orientation and stoichiometry. The transport process of sputtered Li and Co atoms from the LiCoO2 target to the substrate, through Ar plasma in a planar magnetron configuration, was investigated based on the Monte Carlo technique. The effect of sputtering gas pressure and the substrate-target distance (dst) on Li/Co ratio, as well as, energy and angular distribution of sputtered atoms on the substrate were examined. Stable Li/Co ratios have been obtained at 5 Pa pressure and dst in the range 5−11 cm. The kinetic energy and incident angular distribution of Li and Co atoms reaching the substrate have been found to be dependent on sputtering pressure. Simulations were extended to predict compositional variations in films prepared at various process conditions. These results were compared with the composition of films determined experimentally using x-ray photoelectron spectroscopy (XPS). Li/Co ratio calculated using XPS was in moderate agreement with that of the simulated value. The measured film thickness followed the same trend as predicted by simulation. These studies are shown to be useful in understanding the complexities in multicomponent sputtering.

Combined Raman and infrared investigation of the insulator-to-metal transition in NiS(2-x)Se(x) compounds

Ambient-condition Raman spectra were collected in the strongly correlated NiS(1-x)Se(x) pyrite (0 <= x <= 1.2). Two samples (x = 0 and x = 0.55) were studied as a function of pressure up to 10 GPa, and for the x = 0.55 sample the pressure dependence of the infrared reflectivity was also measured (0-10 GPa). This gave a complete picture of the optical response of that system on approaching the metallic state both by application of pressure and/or by Se alloying, which corresponds to a volume expansion. A peculiar nonmonotonic (V-shaped) volume dependence was found for the quasiparticle spectral weight of both pure and Se-doped compounds. In the x = 0.55 sample the vibrational frequencies of the chalcogen dimer show an anomalous volume dependence on entering the metallic phase. The abrupt softening observed, particularly significant for the Se-Se pair, indicates the relevant role of the softness of the Se-Se bond as previously suggested by theoretical calculations.

Materials, Processing, and Testing of Flexible Image Sensor Arrays

Editors' note:Flexible, large-area display and sensor arrays are finding growing applications in multimedia and future smart homes. This article first analyzes and compares current flexible devices, then discusses the implementation, requirements, and testing of flexible sensor arrays.—Jiun-Lang Huang (National Taiwan University) and Kwang-Ting (Tim) Cheng (University of California, Santa Barbara)

Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films

The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.

Electrical Switching and Other Properties of Chalcogenide Glasses

Abstract | Electrical switching which has applications in areas such as information storage, power control, etc is a scientifically interesting and technologically important phenomenon exhibited by glassy chalcogenide semiconductors. The phase change memories based on electrical switching appear to be the most promising next generation non-volatile memories, due to many attributes which include high endurance in write/read operations, shorter write/read time, high scalability, multi-bit capability, lower cost and a compatibility with complementary metal oxide semiconductor technology.Studies on the electrical switching behavior of chalcogenide glasses help us in identifying newer glasses which could be used for phase change memory applications. In particular, studies on the composition dependence of electrical switching parameters and investigations on the correlation between switching behavior with other material properties are necessary for the selection of proper compositions which make good memory materials.In this review, an attempt has been made to summarize the dependence of the electrical switching behavior of chalcogenide glasses with other material properties such as network topological effects, glass transition & crystallization temperature, activation energy for crystallization, thermal diffusivity, electrical resistivity and others.

The electrical switching and thermal behavior of bulk Ge(15)Te(85-x)Sn(x) and Ge(17)Te(83-x)Sn(x) glasses

Bulk Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses, are found to exhibit memory type electrical switching. The switching voltages (V(t)) and thermal stability of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses are found to decrease with Sn content. The composition dependence of v, has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge-Te-Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses. (C) 2011 Elsevier B.V. All rights reserved.

Quantum fidelity for one-dimensional Dirac fermions and two-dimensional Kitaev model in the thermodynamic limit

We study the scaling behavior of the fidelity (F) in the thermodynamic limit using the examples of a system of Dirac fermions in one dimension and the Kitaev model on a honeycomb lattice. We show that the thermodynamic fidelity inside the gapless as well as gapped phases follow power-law scalings, with the power given by some of the critical exponents of the system. The generic scaling forms of F for an anisotropic quantum critical point for both the thermodynamic and nonthermodynamic limits have been derived and verified for the Kitaev model. The interesting scaling behavior of F inside the gapless phase of the Kitaev model is also discussed. Finally, we consider a rotation of each spin in the Kitaev model around the z axis and calculate F through the overlap between the ground states for the angle of rotation eta and eta + d eta, respectively. We thereby show that the associated geometric phase vanishes. We have supplemented our analytical calculations with numerical simulations wherever necessary.