The interface makes a difference: lanthanide ion coated vesicles hydrolyze phosphodiesters

Lanthanide ions are strong Lewis acids. Their complexation to a variety of ligands can further enhance their Lewis acidity allowing the hydrolysis of phosphoesters and even DNA. We show that the interaction of lanthanide ions with vesicles from zwitterionic phosphatidylcholine lipids gives supramolecular structures in which the metal ion is loosely coordinated to the surface. This assembly provides a high density of Lewis-acidic metal centres, which hydrolyze phosphodiesters with enhanced rates.

Role of thermal annealing on SiGe thin films fabricated by PECVD

Amorphous Silicon Germanium (a-SiGe) thin films of 500 nm thickness are deposited on silicon substrates using Plasma Enhanced Chemical Vapour Deposition (PECVD). To obtain polycrystalline nature of films, thermal annealing is done at various temperature (450-600 degrees C) and time (1-10 h). The surface morphology of the pre- and post-annealed films is investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The crystallographic structure of the film is obtained by X-ray diffraction method. Raman spectroscopy is carried out to quantify the Ge concentration and the degree of strain relaxation in the film. Nano-indentation is performed to obtain the mechanical properties of the film. It is found that annealing reduces the surface roughness of the film and increases the Ge concentration in the film. The grain size of the film increases with increase in annealing temperature. The grain size is found to decrease with increase in annealing time up to 5 h and then increased. The results show that 550 degrees C for 5 h is the critical annealing condition for variation of structural and mechanical properties of the film. Recrystallization starts at this condition and results in finer grains. An increase in hardness value of 7-8 GPa has been observed. Grain growth occurs above this critical annealing condition and degrades the mechanical properties of the film. The strain in the film is only relaxed to about 55% even for 10 h of annealing at 600 degrees C. Transmission Electron Microscopy (TEM) observations show that the strain relaxation occurs by forming misfit dislocations and these dislocations are confined to the SiGe/Si interface. (C) 2015 Elsevier Ltd. All rights reserved.

An efficient strategy to develop microwave shielding materials with enhanced attenuation constant

A mutually miscible homopolymer (here polymethyl methacrylate; PMMA) was employed to tailor the interfacial properties of immiscible polycarbonate/styrene acrylonitrile (PC/SAN) blends. In order to design materials that can shield microwave radiation, one of the key properties i.e. electrical conductivity was targeted here using a conducting inclusion; multiwall carbon nanotubes (MWNTs). Owing to higher polarity, MWNTs prefer PC over SAN which though enhance the electrical conductivity of the blends, they don't improve the interfacial properties and results in poor mechanical properties. Hence, an efficient strategy has been adopted here to simultaneously enhance the mechanical, electrical and microwave attenuation properties. Herein, the MWNTs were wrapped by PMMA via in situ polymerization of MMA (methyl methacrylate). This strategy resulted in the migration of PMMA modified MWNTs towards the blend's interface and resulted in an effective stress transfer across the interface leading to improved mechanical and dynamic mechanical properties. Interestingly, the bulk electrical conductivity of the blends was also enhanced, manifesting the improved dispersion of the MWNTs. The state of dispersion of the MWNTs and the phase morphology were assessed using scanning electron microscopy. The microwave attenuation properties were evaluated using a vector network analyzer (VNA) in the X and K-u-band frequencies. The blends with PMMA wrapped MWNTs manifested a -21 dB of shielding effectiveness which suggests attenuation of more than 99% of the incoming microwave radiation. More interestingly, the attenuation constant could be tuned here employing this unique strategy. This study clearly opens a new tool box in designing materials that show improved mechanical, dynamic mechanical, electrical conductivity and microwave shielding properties.

Physical Insights on the Ambiguous Metal-Graphene Interface and Proposal for Improved Contact Resistance

The ambiguous behavior of metal-graphene interface has been addressed in this paper using density functional theory and nonequilibrium Green's function formalism. For the first time, the fundamental chemistry of metal-graphene interface, in particular role of sp-hybridized and sp(2)-hybridized carbon atoms, has been emphasized and discussed in detail in this paper. It was discovered that the sp-hybridized sites at the edge of a graphene monolayer contribute to 40% of current conduction when compared with sp(2)-hybridized atom sites in the graphene-metal overlap region. Moreover, we highlighted the insignificance of an additional metal layer, i.e., sandwiched contact, due to lacking sp-hybridized carbon sites. A fundamental way of defining the contact resistance, while keeping chemical bonding in mind, has been proposed. The bonding insight has been further used to propose the novel ways of interfacing metal with graphene, which results in a 40% reduction in contact resistance.

DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating

High-kappa TiO2 thin films have been fabricated from a facile, combined sol-gel spin - coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO2 with a small grain size of 18 nm. The refractive index `n' quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 angstrom. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO2 were studied by capacitance - voltage (C - V) and deep level transient spectroscopy (DLTS). The flat - band voltage (V-FB) and the density of slow interface states estimated are -0.9, -0.44 V and 5.24x10(10), 1.03x10(11) cm(-2); for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross -sections measured by DLTS are E-V + 0.30, E-C - 0.21 eV; 8.73x10(11), 6.41x10(11) eV(-1) cm(-2) and 5.8x10(-23), 8.11x10(-23) cm(2) for the NMOS and PMOS structures, respectively. A low value of interface state density in both P-and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent. (C) 2015 Author(s).

Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS(2-)channel-based field effect transistors. Approaches such as choosing metals with appropriate work functions and chemical doping are employed previously to improve the carrier injection from the contact electrodes to the channel and to mitigate the SBH between the MoS2 and metal. Recent experiments demonstrate significant SBH reduction when graphene layer is inserted between metal slab (Ti and Ni) and MoS2. However, the physical or chemical origin of this phenomenon is not yet clearly understood. In this work, density functional theory simulations are performed, employing pseudopotentials with very high basis sets to get insights of the charge transfer between metal and monolayer MoS2 through the inserted graphene layer. Our atomistic simulations on 16 different interfaces involving five different metals (Ti, Ag, Ru, Au, and Pt) reveal that (i) such a decrease in SBH is not consistent among various metals, rather an increase in SBH is observed in case of Au and Pt; (ii) unlike MoS2-metal interface, the projected dispersion of MoS2 remains preserved in any MoS2-graphene- metal system with shift in the bands on the energy axis. (iii) A proper choice of metal (e.g., Ru) may exhibit ohmic nature in a graphene-inserted MoS2-metal contact. These understandings would provide a direction in developing high-performance transistors involving heteroatomic layers as contact electrodes. (c) 2016 AIP Publishing LLC.

Two-Phase Metallic Thermal Interface Materials Processed Through Liquid Phase Sintering Followed by Accumulative Roll Bonding

Thermal interface materials (TIMs) form a mechanical and thermal link between a heat source and a heat sink. Thus, they should have high thermal conductivity and high compliance to efficiently transfer heat and accommodate any differential strain between the heat source and the sink, respectively. This paper reports on the processing and the characterization of potential metallic TIM composite solders comprising of Cu, a high conductivity phase, uniformly embedded in In matrix, a highly compliant phase. We propose the fabrication of such a material by a two-step fabrication technique comprising of liquid phase sintering (LPS) followed by accumulative roll bonding (ARB). To demonstrate the efficacy of the employed two-step processing technique, an In-40 vol. % Cu composite solder was produced first using LPS with short sintering periods (30 or 60 s at 160 degrees C) followed by ARB up to five passes, each pass imposing a strain of 50%. Mechanical response and electrical and thermal conductivities of the fabricated samples were evaluated. It was observed that processing through ARB homogenizes the distribution of Cu in an In matrix, disintegrates the agglomerates of Cu powders, and also significantly increases thermal and electrical conductivities, almost attaining theoretically predicted values, without significantly increasing the flow stress. Furthermore, the processing technique also allows the insertion of desired foreign species, such as reduced graphene oxide, in In-Cu for further enhancing a target property, such as electrical conductivity.

Mechanism to synthesize a `moving optical mark' at solid-ambient interface for the estimation of thermal diffusivity of solid

supporting unsteady heat flow with its ambient-humidity; invokes phase transformation of water-vapour molecule and synthesize a `moving optical-mark' at sample-ambient-interface. Under tailored condition, optical-mark exhibits a characteristic macro-scale translatory motion governed by thermal diffusivity of solid. For various step-temperature inputs via cooling, position-dependent velocities of moving optical-mark are measured at a fixed distance. A new approach is proposed. `Product of velocity of optical-mark and distance' versus `non-dimensional velocity' is plotted. The slope reveals thermal diffusivity of solid at ambient-temperature; preliminary results obtained for Quartz-glass is closely matching with literature. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Localized Excitations and the Morphology of Cooperatively Rearranging Regions in a Colloidal Glass-Forming Liquid

We develop a scheme based on a real space microscopic analysis of particle dynamics to ascertain the relevance of dynamical facilitation as a mechanism of structural relaxation in glass-forming liquids. By analyzing the spatial organization of localized excitations within clusters of mobile particles in a colloidal glass former and examining their partitioning into shell-like and corelike regions, we establish the existence of a crossover from a facilitation-dominated regime at low area fractions to a collective activated hopping-dominated one close to the glass transition. This crossover occurs in the vicinity of the area fraction at which the peak of the mobility transfer function exhibits a maximum and the morphology of cooperatively rearranging regions changes from stringlike to a compact form. Collectively, our findings suggest that dynamical facilitation is dominated by collective hopping close to the glass transition, thereby constituting a crucial step towards identifying the correct theoretical scenario for glass formation.

Effect of morphology on the magnetic properties of Gd2O3 nanotubes

Gadolinium oxide (Gd2O3) nanotubes of micron length and average diameter 100 nm have been synthesized by a controlled template-assisted electrochemical deposition technique. Structure and morphology of the synthesized nanotubes have been well characterized by using microscopy and spectroscopy analyses. HRTEM and XRD analysis revealed the crystalline planes of Gd2O3 nanotubes. Magnetic measurements of the aligned Gd2O3 nanotubes have been performed for both parallel and perpendicular orientations of the magnetic field with respect to the axis of the Gd2O3 nanotube array. Large bifurcation in ZFC-FC over the regime of 2-320 K without any signature of long range magnetic ordering confirms the presence of SPM clusters in Gd2O3 nanotubes. Also, large magnetocaloric effect is observed in the cryogenic temperature regime. No anisotropy is seen at the low temperature region but is found to evolve with temperature and becomes significant 300 K. These nanotubes can be considered as promising candidates for magnetic refrigeration at cryogenic temperature. (C) 2016 Elsevier B.V. All rights reserved.

Orientation Selection and Microstructural Evolution in Directionally Solidified Tb0.3Dy0.7Fe1.95

Tb0.3Dy0.7Fe1.95 alloy was directionally solidified by using a modified Bridgman technique at a wide range of growth rates of 5 to 100 cm/h. The directionally grown samples exhibited plane front solidification morphology up to a growth rate of 90 cm/h. Typical island banding feature was observed closer to the chilled end, which eventually gave rise to irregular peritectic coupled growth (PCG). The PCG gained prominence with an increase in the growth rate. The texture study revealed formation of strong aOE (c) 311 > texture in a lower growth rate regime, aOE (c) 110 > and ``rotated aOE (c) 110 > aEuroe in an intermediate growth regime, and aOE (c) 112 > in a higher growth rate regime. In-depth analysis of the atomic configuration of a solid-liquid interface revealed that the growth texture is influenced by the kinetics of atomic attachment to the solid-liquid interface, which is intimately related to a planar packing fraction and an atomic stacking sequence of the interfacial plane. The mechanism proposed in this article is novel and will be useful in addressing the orientation selection mechanism of topologically closed packed intermetallic systems. The samples grown at a higher growth rate exhibit larger magnetostriction (lambda) and d lambda/dH owing to the absence of pro-peritectic (Tb,Dy)Fe-3 and formation of aOE (c) 112 > texture, which lies closer to the easy magnetization direction (EMD).

The influence of current density on the morphology and corrosion properties of MAO coatings on AZ31B magnesium alloy

Micro-arc oxidation (MAO) coatings were prepared on AZ31B magnesium alloy using alkaline silicate electrolyte at different current densities (0.026, 0.046 and 0.067 A/cm(2)). Field Emission Scanning Electron Microscopy (FESEM) analysis of the coating revealed an irregular porous structure with cracked morphology. Compositional analysis carried out for MAO coating showed the presence of almost an equal amount of Mg and 0 (34 wt.%) apart from other elements such as F, Si and AI. The cross-sectional FESEM images clearly portrayed that the MAO coating was dense along with the presence of very few fine pores. The surface roughness (R-a) of the coatings increased with an increase in the current density. Potentiodynamic polarization and electrochemical impedance spectroscopic (EIS) studies were carried out for both the bare and MAO coated AZ31B Mg alloy in 3.5% NaCl solution. The corrosion potential (E-corr) and corrosion current density (i(corr)) values obtained for the bare substrate were -1.49 V and 46 mu A/cm(2), respectively. The coating prepared at 0.046 A/cm(2) exhibited the lowest i(corr) value of 7.79 x 10(-10) A/cm(2) and highest polarization resistance (41.6 M Omega cm(2)) attesting to the better corrosion resistance of the coating compared to other samples. EIS results also indicated almost similar corrosion behavior for the MAO coatings. Mott-Schottky analysis showed n-type and p-type semiconductor behavior for the oxide layer present on the bare magnesium alloy and MAO coatings respectively. (C) 2016 Published by Elsevier B.V.

Density functional theory based study of chlorine doped WS2-metal interface

Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS2. (C) 2016 AIP Publishing LLC.

Nickel Electrode for Improving Current Density in Organic Electronic Device

In this work, polymer diode performance was analyzed by using nickel as anode electrode from two kinds of nickel as starting materials, namely nickel wire Ni{B} and nickel nano-particle Ni{N}. Metal electrode surface roughness and grain morphology were investigated by atomic force microscope and scanning electron microscope, respectively. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured for the fabricated device at room temperature. Obtained result from the current-voltage characteristics shows an increment in the current density for nickel nano-particle top electrode device. The increase in the current density could be due to a reduction in built-in voltage at P3HT/Ni{N} interface.

Effect of particle size of sand and surface asperities of reinforcement on their interface shear behaviour

This paper investigates the effect of particle size of sand and the surface asperities of reinforcing material on their interlocking mechanism and its influence on the interfacial shear strength under direct sliding condition. Three sands of different sizes with similar morphological characteristics and four different types of reinforcing materials with different surface features were used in this study. Interface direct shear tests on these materials were performed in a specially developed symmetric loading interface direct shear test setup. Morphological characteristics of sand particles were determined from digital image analysis and the surface roughness of the reinforcing materials was measured using an analytical expression developed for this purpose. Interface direct shear tests at three different normal stresses were carried out by shearing the sand on the reinforcing material fixed to a smooth surface. Test results revealed that the peak interfacial friction and dilation angles are hugely dependent upon the interlocking between the sand particles and the asperities of reinforcing material, which in turn depends on the relative size of sand particles and asperities. Asperity ratio (AS/D-50) of interlocking materials, which is defined as the ratio of asperity spacing of the reinforcing material and the mean particle size of sand was found to govern the interfacial shear strength with highest interfacial strength measured when the asperity ratio was equal to one, which represents the closest fitting of sand particles into the asperities. It was also understood that the surface roughness of the reinforcing material influences the shear strength to an extent, the influence being more pronounced in coarser particles. Shear bands in the interface shear tests were analysed through image segmentation technique and it was observed that the ratio of shear band thickness (t) to the median particle size (D-50) was maximum when the AS/D-50 was equal to one. (C) 2015 Elsevier Ltd. All rights reserved.