Gravitational rescue of minimal gauge mediation

Gravity mediated supersymmetry breaking becomes comparable to gauge mediated supersymmetry breaking contributions when messenger masses are close to the GUT scale. By suitably arranging the gravity contributions, one can modify the soft supersymmetry breaking sector to generate a large stop mixing parameter and a light Higgs mass of 125 GeV. In this kind of hybrid models, however, the nice features of gauge mediation like flavor conservation, etc. are lost. To preserve the nice features, gravitational contributions should become important for lighter messenger masses and should be important only for certain fields. This is possible when the hidden sector contains multiple (at least two) spurions with hierarchical vacuum expectation values. In this case, the gravitational contributions can be organized to be ``just right.'' We present a complete model with two spurion hidden sector where the gravitational contribution is from a warped flavor model in a Randall-Sundrum setting. Along the way, we present simple expressions to handle renormalization group equations when supersymmetry is broken by two different sectors at two different scales.

Simultaneous tunability of the electronic and phononic gaps in SnS2 under normal compressive strain

Controlled variation of the electronic properties of. two-dimensional (2D) materials by applying strain has emerged as a promising way to design materials for customized applications. Using density functional theory (DFT) calculations, we show that while the electronic structure and indirect band gap of SnS2 do not change significantly with the number of layers, they can be reversibly tuned by applying biaxial tensile (BT), biaxial compressive (BC), and normal compressive (NC) strains. Mono to multilayered SnS2 exhibit a reversible semiconductor to metal (S-M) transition with applied strain. For bilayer (2L) SnS2, the S-Mtransition occurs at the strain values of 17%,-26%, and -24% under BT, BC, and NC strains, respectively. Due to weaker interlayer coupling, the critical strain value required to achieve the S-Mtransition in SnS2 under NC strain is much higher than for MoS2. From a stability viewpoint, SnS2 becomes unstable at very low strain values on applying BC (-6.5%) and BT strains (4.9%), while it is stable even up to the transition point (-24%) in the case of NC strain. In addition to the reversible tuning of the electronic properties of SnS2, we also show tunability in the phononic band gap of SnS2, which increases with applied NC strain. This gap increases three times faster than for MoS2. This simultaneous tunability of SnS2 at the electronic and phononic levels with strain, makes it a potential candidate in field effect transistors (FETs) and sensors as well as frequency filter applications.