Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250-400 degrees C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (similar to 10-15 nm) and micron long ITO NWs growth was observed in a temperature window of 300-400 degrees C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300-400 degrees C have shown similar to 2-6% reflection and similar to 70-85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.

Climate change scenarios of surface solar radiation in data sparse regions: a case study in Malaprabha River Basin, India

A variety of methods are available to estimate future solar radiation (SR) scenarios at spatial scales that are appropriate for local climate change impact assessment. However, there are no clear guidelines available in the literature to decide which methodologies are most suitable for different applications. Three methodologies to guide the estimation of SR are discussed in this study, namely: Case 1: SR is measured, Case 2: SR is measured but sparse and Case 3: SR is not measured. In Case 1, future SR scenarios are derived using several downscaling methodologies that transfer the simulated large-scale information of global climate models to a local scale ( measurements). In Case 2, the SR was first estimated at the local scale for a longer time period using sparse measured records, and then future scenarios were derived using several downscaling methodologies. In Case 3: the SR was first estimated at a regional scale for a longer time period using complete or sparse measured records of SR from which SR at the local scale was estimated. Finally, the future scenarios were derived using several downscaling methodologies. The lack of observed SR data, especially in developing countries, has hindered various climate change impact studies. Hence, this was further elaborated by applying the Case 3 methodology to a semi-arid Malaprabha reservoir catchment in southern India. A support vector machine was used in downscaling SR. Future monthly scenarios of SR were estimated from simulations of third-generation Canadian General Circulation Model (CGCM3) for various SRES emission scenarios (A1B, A2, B1, and COMMIT). Results indicated a projected decrease of 0.4 to 12.2 W m(-2) yr(-1) in SR during the period 2001-2100 across the 4 scenarios. SR was calculated using the modified Hargreaves method. The decreasing trends for the future were in agreement with the simulations of SR from the CGCM3 model directly obtained for the 4 scenarios.

Nanostructure Patterning on Flexible Substrates Using Electron Beam Lithography

Patterning nanostructures on flexible substrates plays a key role in the emerging flexible electronics technology. The flexible electronic devices are inexpensive and can be conformed to any shape. The potential applications for such devices are sensors, displays, solar cells, RFID, high-density biochips, optoelectronics etc. E-beam lithography is established as a powerful tool for nanoscale fabrication, but its applicability on insulating flexible substrates is often limited because of surface charging effects. This paper presents the fabrication of nanostructures on insulating flexible substrates using low energy E-beam lithography along with metallic layers for charge dissipation. Nano Structures are patterned on different substrates of materials such as acetate and PET foils. The fabrication process parameters such as the proximity gap of exposure, the exposure dosage and developing conditions have been optimized for each substrate.

Crack stability in edge-notched clamped beam specimens: modeling and experiments

Stability of a fracture toughness testing geometry is important to determine the crack trajectory and R-curve behavior of the specimen. Few configurations provide for inherent geometric stability, especially when the specimen being tested is brittle. We propose a new geometrical construction called the single edge notched clamped bend specimen (SENCB), a modified form of three point bending, yielding stable cracking under load control. It is shown to be particularly suitable for small-scale structures which cannot be made free-standing, (e.g., thin films, coatings). The SENCB is elastically clamped at the two ends to its parent material. A notch is inserted at the bottom center and loaded in bending, to fracture. Numerical simulations are carried out through extended finite element method to derive the geometrical factor f(a/W) and for different beam dimensions. Experimental corroborations of the FEM results are carried out on both micro-scale and macro-scale brittle specimens. A plot of vs a/W, is shown to rise initially and fall off, beyond a critical a/W ratio. The difference between conventional SENB and SENCB is highlighted in terms of and FEM simulated stress contours across the beam cross-section. The `s of bulk NiAl and Si determined experimentally are shown to match closely with literature values. Crack stability and R-curve effect is demonstrated in a PtNiAl bond coat sample and compared with predicted crack trajectories from the simulations. The stability of SENCB is shown for a critical range of a/W ratios, proving that it can be used to get controlled crack growth even in brittle samples under load control.

Application of lateral photovoltage towards contactless light beam induced current measurements and its dependence on the finite beam size

The nature of the signal due to light beam induced current (LBIC) at the remote contacts is verified as a lateral photovoltage for non-uniformly illuminated planar p-n junction devices; simulation and experimental results are presented. The limitations imposed by the ohmic contacts are successfully overcome by the introduction of capacitively coupled remote contacts, which yield similar results without any significant loss in the estimated material and device parameters. It is observed that the LBIC measurements introduce artefacts such as shift in peak position with increasing laser power. Simulation of LBIC signal as a function of characteristic length L-c of photo-generated carriers and for different beam diameters has resulted in the observed peak shifts, thus attributed to the finite size of the beam. Further, the idea of capacitively coupled contacts has been extended to contactless measurements using pressure contacts with an oxidized aluminium electrodes. This technique avoids the contagious sample processing steps, which may introduce unintentional defects and contaminants into the material and devices under observation. Thus, we present here, the remote contact LBIC as a practically non-destructive tool in the evaluation of device parameters and welcome its use during fabrication steps. (C) 2014 AIP Publishing LLC.

Sensitivity of simulated climate to latitudinal distribution of solar insolation reduction in solar radiation management

Solar radiation management (SRM) geoengineering has been proposed as a potential option to counteract climate change. We perform a set of idealized geoengineering simulations using Community Atmosphere Model version 3.1 developed at the National Center for Atmospheric Research to investigate the global hydrological implications of varying the latitudinal distribution of solar insolation reduction in SRM methods. To reduce the solar insolation we have prescribed sulfate aerosols in the stratosphere. The radiative forcing in the geoengineering simulations is the net forcing from a doubling of CO2 and the prescribed stratospheric aerosols. We find that for a fixed total mass of sulfate aerosols (12.6 Mt of SO4), relative to a uniform distribution which nearly offsets changes in global mean temperature from a doubling of CO2, global mean radiative forcing is larger when aerosol concentration is maximum at the poles leading to a warmer global mean climate and consequently an intensified hydrological cycle. Opposite changes are simulated when aerosol concentration is maximized in the tropics. We obtain a range of 1 K in global mean temperature and 3% in precipitation changes by varying the distribution pattern in our simulations: this range is about 50% of the climate change from a doubling of CO2. Hence, our study demonstrates that a range of global mean climate states, determined by the global mean radiative forcing, are possible for a fixed total amount of aerosols but with differing latitudinal distribution. However, it is important to note that this is an idealized study and thus not all important realistic climate processes are modeled.

Cold beam of isotopically pure Yb atoms by deflection using 1D-optical molasses

We demonstrate the generation of an isotopically pure beam of laser-cooled Yb atoms by deflection using 1D-optical molasses. Atoms in a collimated thermal beam are first slowed using a Zeeman slower. They are then subjected to a pair of molasses beams inclined at 45(a similar to) with respect to the slowed atomic beam. The slowed atoms are deflected and probed at a distance of 160 mm. We demonstrate the selective deflection of the bosonic isotope Yb-174 and the fermionic isotope Yb-171. Using a transient measurement after the molasses beams are turned on, we find a longitudinal temperature of 41 mK.

A feasibility study of a post-buckled beam for actuating helicopter trailing edge flap

Active trailing edge flaps (TEFs) are one of the most promising devices for helicopter vibration reduction. Smart actuators such as the piezoelectric stack actuators (PEAs) are used for TEF actuation. PEAs possess high energy density and have large force in dynamic condition but are limited to small displacements. In this investigation, we study a linear to rotary motion amplification mechanism (AM-2) based on a pinned-pinned post-buckled beam to actuate trailing edge flaps. A linear motion amplification mechanism is developed and coupled with AM-2 to amplify angular flap deflections. Experiments are conducted on bench top-test setup, and maximum flap angle deflections of the order of 12A degrees are achieved in the static case. An aeroelastic analysis is performed and 91 % reduction in helicopter vibration is obtained with multiharmonic control inputs.

Biocompatible and Antibacterial SnO2 Nanowire Films Synthesized by E-Beam Evaporation Method

In this work, the biocompatibility and antibacterial activities of novel SnO2 nanowire coatings prepared by electron-beam (E-Beam) evaporation process at low temperatures were studied. The nanowire coatings were characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) methods. The results of in vitro cytotoxicity and cell proliferation assays suggested that the SnO2 nanowire coatings were nontoxic and promoted the proliferation of C2C12 and L929 cells (> 90% viability). Cellular activities, cell adhesion, and lactate dehydrogenase activities were consistent with the superior biocompatibility of the nanowire materials. Notably, the nanowire coating showed potent antibacterial activity against six different bacterial strains. The antibacterial activity of the SnO2 material was attributed to the photocatalytic nature of SnO2. The antibacterial activity and biocompatibility of the newly developed SnO2 nanowire coatings may enable their use as coating materials for biomedical implants.

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device. (C) 2014 AIP Publishing LLC.

Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy

Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 degrees C shows better crystallinity with the rocking curve FWHM 0.67 degrees and 0.85 degrees along 0 0 0 1] and 1 - 1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room temperature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

A phylogeny of the only ground-dwelling radiation of Cyrtodactylus (Squamata, Gekkonidae): diversification of Geckoella across peninsular India and Sri Lanka

The subgenus Geckoella, the only ground-dwelling radiation within Cyrtodactylus, closely overlaps in distribution with brookii group Hemidactylus in peninsular India and Sri Lanka. Both groups have Oligocene origins, the latter with over thrice as many described species. The striking difference in species richness led us to believe that Geckoella diversity is underestimated, and we sampled for Geckoella across peninsular India. A multi-locus phylogeny reveals Geckoella diversity is hugely underestimated, with at least seven undescribed species, doubling previously known richness. Strikingly, the new species correspond to cryptic lineages within described Indian species (complexes); a number of these endemic lineages from the hills of peninsular India outside the Western Ghats, highlighting the undocumented diversity of the Indian dry zone. The Geckoella phylogeny demonstrates deep splits between the Indian species and Sri Lankan G. triedrus, and between Indian dry and wet zone clades, dating back to the late Oligocene. Geckoella and brookii group Hemidactylus show contrasting diversification patterns. Geckoella shows signals of niche conservatism and appears to have retained its ancestral forest habitat. The late Miocene burst in speciation in Geckoella may be linked to the expansion of rain forests during the mid-Miocene climatic optimum and subsequent fragmentation with increasing late Miocene aridification. (C) 2014 Elsevier Inc. All rights reserved.

Fabrication and Experimentation of a Cantilever Beam Based Piezoelectric Actuator and Sensor for Vibration Energy Harvesting

In the immediate surroundings of our daily life, we can find a lot of places where the energy in the form of vibration is being wasted. Therefore, we have enormous opportunities to utilize the same. Piezoelectric character of matter enables us to convert this mechanical vibration energy into electrical energy which can be stored and used to power other device, instead of being wasted. This work is done to realize both actuator and sensor in a cantilever beam based on piezoelectricity. The sensor part is called vibration energy harvester. The numerical analyses were performed for the cantilever beam using the commercial package ANSYS and MATLAB. The cantilever beam is realized by taking a plate and fixing its one end between two massive plates. Two PZT patches were glued to the beam on its two faces. Experiments were performed using data acquisition system (DAQ) and LABVIEW software for actuating and sensing the vibration of the cantilever beam.

Fabrication of back contacts using laser writer and photolithography for inscribing textured solar cells

Semiconductor fabrication process begins with photolithography. Preparing a photo mask is the key process step in photolithography. The photo mask was fabricated by inscribing patterns directly onto a soda lime glass with the help of a laser beam, as it is easily controllable. Laser writer LW405-A was used for preparing the mask in this study. Exposure wavelength of 405 nm was used, with which 1.2 mu m feature size can be written in direct write-mode over the soda lime glass plate. The advantage of using the fabricated mask is that it can be used to design back contacts for thin film Photovoltaic (PV) solar cells. To investigate the process capability of LW405-A, same pattern with different line widths was written on soda lime glass samples at different writing speeds. The pattern was inscribed without proximity effect and stitching errors, which was characterized using optical microscope and field emission scanning electron microscope (FE-SEM). It was proven that writing speed of a mask-writer is decided according to the intended feature size and line width. As the writing speed increases, the edges of the patterns become rougher due to uneven scattering of the laser beam. From the fabricated mask, the solar cell can be developed embedding both the contacts at the bottom layer, to increase the absorption of solar radiation on the top surface effectively by increasing light absorption area.