Electrical switching studies on amorphous Ge‐Te‐Sn thin films

Electrical switching studies on amorphous Ge17Te83−xSnx thin films (1 ≤ x ≤ 4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge17Te83−xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83−xSnx samples, make them suitable candidates for phase change memory applications.

Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire

The structural and optical properties of semipolar (1 1 -2 2) GaN grown on m-plane (1 0 -1 0) sapphire substrates by molecular beam epitaxy were investigated. An in-plane orientation relationship was found to be 1 -1 0 0] GaN parallel to 1 2-1 0] sapphire and -1 -1 2 3] GaN parallel to 0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E-2 (high) peak position observed at 569.1 cm(-1), which indicates that film is compressively strained. Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model.

Memory effect in SrRu(1-x)O3 (0.01 < x < 0.07)

SrRuO3 is widely known to be an itinerant ferromagnet with a T-C similar to 160 K. It is well known that glassy materials exhibit time dependent phenomena such as memory effect due to their generic slow dynamics. However, for the first time, we have observed memory effect in SrRu(1-x)O3 (0.01

Growth of Germanium Nanowires by electron beam evaporation

Growth of high density germanium nanowires on Si substrates by electron beam evaporation (EBE) has been demonstrated using gold as catalyst. The germanium atoms are provided by evaporating germanium by electron beam evaporation (EBE) technique. Effect of substrate (growth) temperature and deposition time on the growth of nanowires has studied. The morphology of the nanowires was investigated by field emission scanning electron microscope (FESEM). It has been observed that a narrow temperature window from 380 degrees C to 480 degrees C is good for the nanowires growth as well as restriction on the maximum length of nanowires. It is also observed that high substrate temperature leading to the completely absence of nanowire growth.

Nonlinear dielectric response of BaBi4Ti4O15 ceramics

Nonlinear dielectric response of BaBi4Ti4O15 ceramics synthesized via the conventional solid-state reaction route has been monitored over a wide range of electric field strengths (E-0 = 0.5 - 5 kV/cm). Dielectric permittivity was found to increase linearly within the range of applied field. Rayleigh relations were employed to interpret the nonlinear dielectric response and the contribution of irreversible domain wall motion to the macroscopic permittivity was separated. The values of room temperature Rayleigh dielectric coefficient (alpha) and relative initial permittivity (epsilon'(init)) were found to be 2.28 +/- 0.02 cm/kV and 146.10 +/- 0.07, respectively. A reasonable agreement between the simulated and measured polarization-electric field (P-E) hysteresis loops was observed at an applied electric field of 5 kV/cm.

Magnetic and transport relaxation property of La0.85Sr0.15CoO3 single crystals

Here, we present a comprehensive investigation of the dc magnetization and magnetotransport studies on La0.85Sr0.15CoO3 single crystals grown by the optical float zone method. The spin freezing temperature in the ac susceptibility study shifts to lower value at higher dc field and this is well described by the de Almeida-Thouless line which is the characteristic of SG behavior. The Magnetotransport study shows that the sample exhibits a huge negative MR of similar to 70% at 10 K which monotonically decreases with the increase in temperature. Besides, the magnetization and the resistivity relaxation give strong indication that the MR scales with sample's magnetization. In essence, all the present experimental findings evidence the SG behavior of La0.85Sr0.15CoO3 single crystals.

A study on pulsed laser deposited metallic spin valves

In the recent past conventional Spin Valve (SV) structures are gaining growing interest over Tunneling Magneto-resistance (TMR) because of its preference due to low RA product in hard disc read head sensor applications. Pulsed Laser Deposited (PLD) SV and Pseudo Spin Valve (PSV) samples are grown at room temperature with moderately high MR values using simple FM/NM/FM/AFM structure. Although PLD is not a popular technique to grow metallic SVs because of expected large intermixing of the interfaces, particulate formation, still by suitably adjusting the deposition parameters we could get exchange bias (EB) as well as 2-3% MR of these SVs in the Current In Plane (CIP) geometry. Exchange Bias, which sets in even without applying magnetic field during deposition observed by using SQUID magnetometry as well as by MR measurements. Angular variation of the MR reveals four-fold anisotropy of the hard layer (Co) which becomes two-fold in presence of an adjacent AFM layer.

Physical understanding of pore formation on supported lipid bilayer by bacterial toxins

Pore forming toxins are being classified in the protein community based on their ability of forming pores in living cell membranes. Some initial study has apparently pointed out the crystallographic pathway rather can be viewed as a structural as well as morphological changes of proteins in terms of self assembly before and during the pore formation process in surfactant medium. Being a water soluble compound, it changes its conformation and originates some pre-pore complex, which later partially goes inside the cell membrane causing a pore. The physical mechanism for this whole process is still unknown. In this study we have tried to understand these types of biological processes from physical point of view by using supported lipid bilayer as a model system.

Laser- induced optical properties change in Sb10S40Se50 chalcogenide thin films: An investigation through FTIR and XPS measurements

Chalcogenide glasses are interesting materials for their infrared transmitting properties and photo-induced effects. This paper reports the influence of light on the optical properties of Sb10S40Se50 thin films. The amorphous nature and chemical composition of the deposited film was studied by X-ray diffraction and energy dispersive X-ray analysis (EDAX). The optical constants, i.e., refractive index, extinction coefficient, and optical band gap as well as film thickness are determined from the measured transmission spectra using the Swanepoel method. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. The dispersion energy parameter was found to be less for the laser-irradiated film, which indicates the laser-irradiated film is more microstructurally disordered as compared to the as-prepared film. It is observed that laser-irradiation of the films leads to decrease in optical band gap (photo-darkening) while increase in refractive index. The decrease in the optical band gap is explained on the basis of change in nature of films due to chemical disorderness and the increase in refractive index may be due to the densification of films with improved grain structure because of microstructural disorderness in the films. The optical changes are supported by X-ray photoelectron spectroscopy data. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Fermi-Edge Transmission Resonance in Graphene Driven by a Single Coulomb Impurity

The interaction between the Fermi sea of conduction electrons and a nonadiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude approximate to e(2)/h at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.

Design and Development of Thermoelectric Generator

In this paper we discuss the fabrication, working and characteristics of a thermoelectric generator made up of p and n type semiconductor materials. The device consists of Fe0.2Co3.8Sb11.5Te0.5 (zT = 1.04 at 818 K) as the n-type and Zn4Sb3 (zT= 0.8 at 550 K) as the p-type material synthesized by vacuum hot press method. Carbon paste has been used to join the semiconductor legs to metal (Molybdenum) electrodes to reduce the contact resistance. The multi-couple (4 legs) generator results a maximum output power of 1.083 mW at a temperature difference of 240 K between the hot and cold sides. In this investigation, an I-V characteristic, maximum output power of the thermoelectric module is presented. The efficiency of thermoelectric module is obtained as eta= 0.273 %.

Raman Evidence for Coupling of Superconducting Quasi-Particles with a Phonon and Crystal Field Excitation in Superconductor Ce0.6Y0.4FeAsO0.8F0.2

We report inelastic light scattering experiments on superconductor Ce0.6Y0.4FeAsO0.8F0.2 from 4K to 300K covering the superconducting transition temperature T-c similar to 48.6K. A strong evidence of the superconductivity induced phonon renormalization for the A(1g) phonon mode near 150cm(-1) associated with the Ce/Y vibrations is observed as reflected in the anomalous red-shift and decrease in the linewidth below T-c. Invoking the coupling of this mode with the superconducting gap, the superconducting gap (2 Delta) at zero temperature is estimated to be similar to 20meV i.e the ratio 2 Delta(0)/k(B)T(c) is similar to 5, suggesting Ce0.6Y0.4FeAsO0.8F0.2 to belong to the class of strong coupling superconductors. In addition, the mode near 430cm(-1) associated with Ce3+ crystal field excitation also shows anomalous increase in its linewidth below T-c suggesting strong coupling between crystal field excitation and the superconducting quasi-particles.

Elastic Properties Of Sulphur And Selenium Doped Ternary PbTe Alloys By First Principles

Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbSxTe(1-x) and PbSexTe(1-x) (0 <= x <= 1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

Study Of Lattice Dynamics In Yttrium Doped NdMnO3 Using Raman Spectroscopy

A systematic study of Raman spectra on Yttrium doped NdMnO3 polycrystalline samples was undertaken to understand the lattice dynamics in this compound. Raman active phonons were analyzed and the observed peak were assigned to elucidate various phonon modes in the range (200 - 800) cm(-1). It was observed that at 325 cm(-1) phonon frequency shifts upward as much as upto 4 % with increase in Yttrium content. Lattice distortions manifest themselves by frequency shifts in both bending and tilt modes of MnO6 octahedra, resulting in increase of Raman band line-widths.

Evidence of Low Field Magnetoimpedance Effect in (111) Oriented Fe3O4 Thin Films

Thin film of Fe3O4 is grown on (100) oriented GaAs substrate using pulsed laser deposition (PLD). The films were found to be (111) oriented. They were characterized morphologically as well as magnetically. They show Verwey transition at 120 K with the coercivity of 220 Oe at room temperature. These films were found to show magnetoimpedance effect with the ac magnetoresistance (MRac) of the order of similar to -6% at 10 MHz, at room temperature. The MRac was found to increase in low field-low frequency regime and decrease in low field high frequency regime.