Investigation Into Harmful Patterns Over Multitrack Shingled Magnetic Detection Using the Voronoi Model

Two-dimensional magnetic recording 2-D (TDMR) is a promising technology for next generation magnetic storage systems based on a systems-level framework involving sophisticated signal processing at the core. The TDMR channel suffers from severe jitter noise along with electronic noise that needs to be mitigated during signal detection and recovery. Recently, we developed noise prediction-based techniques coupled with advanced signal detectors to work with these systems. However, it is important to understand the role of harmful patterns that can be avoided during the encoding process. In this paper, we investigate the Voronoi-based media model to study the harmful patterns over multitrack shingled recording systems. Through realistic quasi-micromagnetic simulation studies, we identify 2-D data patterns that contribute to high media noise. We look into the generic Voronoi model and present our analysis on multitrack detection with constrained coded data. We show that the 2-D constraints imposed on input patterns result in an order of magnitude improvement in the bit-error rate for the TDMR systems. The use of constrained codes can reduce the complexity of 2-D intersymbol interference (ISI) signal detection, since the lesser 2-D ISI span can be accommodated at the cost of a nominal code rate loss. However, a system must be designed carefully so that the rate loss incurred by a 2-D constraint does not offset the detector performance gain due to more distinguishable readback signals.

Flow Investigation of Linear Cluster Plug Nozzle

Computational and experimental tools have been used to understand the linear cluster plug nozzle flowfield for a range of pressure ratios. The experimental cluster configuration is arrived at from a linear plug nozzle by introducing splitter plates in the primary nozzle, and computational analysis of corresponding geometry is also carried out. The flow development on the plug surface has been analyzed for two different cluster module spacings. The interactions between the cluster module jets is a complex one with a three-dimensional shock structure because of the differential end condition the shock experiences on the plug wall and freejet boundary. A prominent streamwise vorticity resulting from curvature of the shock is also seen along the length of the plug downstream of the module junctions. The out-of-phase wave interactions occurring along the module centerline and the splitter plate centerline, resulting in a wavy surface-limiting streamline pattern, particularly at lower pressure ratios, is explained.

Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor

We report the tunable dielectric constant of titania films with low leakage current density. Titanium dioxide (TiO2) films of three different thicknesses (36, 63 and 91 nm) were deposited by the consecutive steps of solution preparation, spin-coating, drying, and firing at different temperatures. The problem of poor adhesion between Si substrate and TiO2 insulating layer was resolved by using the plasma activation process. The surface roughness was found to increase with increasing thickness and annealing temperature. The electrical investigation was carried out using metal-oxide-semiconductor structure. The flat band voltage (V-FB), oxide trapped charge (Q(ot)), dielectric constant (kappa) and equivalent oxide thicknesses are calculated from capacitance-voltage (C-V) curves. The C-V characteristics indicate a thickness dependent dielectric constant. The dielectric constant increases from 31 to 78 as thickness increases from 36 to 91 nm. In addition to that the dielectric constant was found to be annealing temperature and frequency dependent. The films having thickness 91 nm and annealed at 600 A degrees C shows the low leakage current density. Our study provides a broad insight of the processing parameters towards the use of titania as high-kappa insulating layer, which might be useful in Si and polymer based flexible devices.