Electrical switching in chalcogenide glasses - Some newer insights

The recent studies on the switching. behavior of several chalcogenide semiconductors indicate that there exists a close relation between the electrical switching and structural effects in these materials; the two network topological Thresholds, namely the Rigidity Percolation and the Chemical Threshold are found to influence considerably the composition dependence of the switching voltages/fields of many memory and threshold switching glasses. Further, changes in the coordination of constituent atoms are found to effect a change in the switching behavior (memory to threshold), Also, an interesting relation has been established between the type of switching exhibited and the thermal diffusivity of the material.

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.

General theories for the electrical transport properties of carbon nanotubes

We have shown that the general theories of metals and semiconductors can be employed to understand the diameter and voltage dependency of current through metallic and semiconducting carbon nanotubes, respectively. The current through a semiconducting multiwalled carbon nanotube (MWCNT) is associated with the energy gap that is different for different shells. The contribution of the outermost shell is larger as compared to the inner shells. The general theories can also explain the diameter dependency of maximum current through nanotubes. We have also compared the current carrying ability of a MWCNT and an array of the same diameter of single wall carbon nanotubes (SWCNTs) and found that MWCNTs are better suited and deserve further investigation for possible applications as interconnects.

Analytical solutions for heat transfer during cyclic melting and freezing of a phase change material used in electronic or electrical packaging

In this paper we develop an analytical heat transfer model, which is capable of analyzing cyclic melting and solidification processes of a phase change material used in the context of electronics cooling systems. The model is essentially based on conduction heat transfer, with treatments for convection and radiation embedded inside. The whole solution domain is first divided into two main sub-domains, namely, the melting sub-domain and the solidification sub-domain. Each sub-domain is then analyzed for a number of temporal regimes. Accordingly, analytical solutions for temperature distribution within each subdomain are formulated either using a semi-infinity consideration, or employing a method of quasi-steady state, depending on the applicability. The solution modules are subsequently united, leading to a closed-form solution for the entire problem. The analytical solutions are then compared with experimental and numerical solutions for a benchmark problem quoted in the literature, and excellent agreements can be observed.

Synthesis and metallic probe induced conductance of Au tipped ultranarrow PbS rods

Au tipped ultranarrow PbS nanorods are synthesized. DFT electronic structure calculations and transport studies show that Au probes modify the nature and energies of PbS nanorod orbitals creating efficient electron conduction channels for enhanced conductance even at low applied bias.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

A study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

YMnO3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion.

Electrical switching studies on AS(40)Te(60-x)Se(x) and As35Te65-xSex glasses

The I-V characteristics of bulk As40Te60-xSex and As35Te65-xSex glasses have been studied with a current sweep of 0-18 mA-0, over a wide range of compositions (4 less than or equal to x less than or equal to 22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18-0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Effect of annealing temperature on electrical and nano-structural properties of sol-gel derived ZnO thin films

Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol-gel spin coating technique with spinning speed of 3,000 rpm. The films were annealed at different temperatures from 200 to 500 A degrees C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400 A degrees C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tan delta) were increased with increase of annealing temperature.

A Macroscopic Model for First Return Stroke of Lightning

A lightning return stroke model for a downward flash is proposed. The model includes underlying physical phenomena governing return stroke evolution, namely, electric field due to charge distributed along the leader and cloud, transient enhancement of series channel conductance at the bridging regime, and the nonlinear variation of channel conductance, which supports the return stroke current evolution. Thermal effects of free burning arc at the stroke wave front and its impact on channel conductance are studied. A first-order arc model for determining the dynamic channel conductance along with a field-dependent conductivity for corona sheath is used in the model. The model predicts consistent current propagation along the channel with regard to current amplitude and return stroke velocity. The model is also capable of predicting the remote electromagnetic fields that are consistent with the experimental observations.