360 resultados para Demographic Transition


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The electronic structures of a wide range of early transition-metal (TM) compounds, including Ti and V oxides with metal valences ranging from 2+ to 5+ and formal d-electron numbers ranging from 0 to 2, have been investigated by a configuration-interaction cluster model analysis of the core-level metal 2p x-ray photoemission spectra (XPS). Inelastic energy-loss backgrounds calculated from experimentally measured electron-energy-loss spectra (EELS) were subtracted from the XPS spectra to remove extrinsic loss features. Parameter values deduced for the charge-transfer energy Delta and the d-d Coulomb repulsion energy U are shown to continue the systematic trends established previously for the late TM compounds, giving support to a charge-transfer mechanism for the satellite structures. The early TM compounds are characterized by a large metal d-ligand p hybridization energy, resulting in strong covalency in these compounds. Values for Delta and U suggest that many early TM compounds should be reclassified as intermediate between the charge-transfer regime and the Mott-Hubbard regime.

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We study the generation of coherent optical phonons in spin-frustrated pyrochlore single crystals Dy2Ti2O7, Gd2Ti2O7, and Tb2Ti2O7 using femtosecond laser pulses (65 fs, 1.57 eV) in degenerate time-resolved transmission experiments as a function of temperature from 4 to 296 K. At 4 K, two coherent phonons are observed at similar to 5.3 THz (5.0 THz) and similar to 9.3 THz (9.4 THz) for Dy2Ti2O7 (Gd2Ti2O7), whereas three coherent phonons are generated at similar to 5.0, 8.6, and 9.7 THz for Tb2Ti2O7. In the case of spin-ice Dy2Ti2O7, a clear discontinuity is observed in the linewidths of both the coherent phonons as well as in the phase of lower-energy coherent phonon mode, indicating a subtle structural change at 110 K. Another important observation is a phase difference of pi between the modes in all the samples, thus suggesting that the driving forces behind the generation of these modes could be different in nature, unlike a purely impulsive or displacive mechanism.

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Studies have been carried out in glasses containing Fe2O3, V2O5, and Fe2O3 + V2O5. Mossbauer studies in the ZnO-B2O3-Fe2O3 system show that iron is present as Fe3+ with tetrahedral coordination and that the isomer shift and the quadrupole splitting decrease with increase of Fe2O3 Content; similarly, the isomer shift and quadrupole splitting are also found to decrease with increasing ZnO. On the other hand, in the Na2O-ZnO-B2O3-Fe2O3 system, the isomer shift increases with Na2O or ZnO while the quadrupole splitting is fairly insensitive. Electron paramagnetic resonance in the ZnO-B2O3-Fe2O3 system shows signals at g = 4.20 and 2.0, whose intensity and linewidth show strong dependence on Fe2O3 content. In the ZnO-B2O3-V2O5 system, electron paramagnetic resonance shows that vanadium is present as the vanadyl complex, and the hyperfine coupling constants, A(parallel-to) and A(perpendicular-to) decrease with increasing V2O5 content; on the other hand, g(parallel-to) decreases and g(perpendicular-to) increases slightly, indicating an increase in tetragonal distortion. Zinc borate glasses containing Fe2O3 + V2O5 do not show the hyperfine structure of V4+ due to the interaction between Fe3+ and V4+

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Some materials exhibit large changes in electrical resistance in the presence of a magnetic field, and this change can be used in applications from sensor technology to magnetic data storage. In their Perspective, Rao and Cheetham discuss magnetoresistance in perovskite manganates, where the effect is unusually strong. Much has been learned about these materials, and this understanding is driving the search for new materials with even more impressive properties.

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The first fabrication of self-doped La1-xMnO3-delta films which are unique among the other La(1-x)M(x)MnO(3) (M = Ca, Ba and Pb) thin films showing giant magnetoresistance is reported. Ag-doped La0.7MnO3-delta films were grown on LaAlO3[100] substrates. These films show ferromagnetic and metal-insulator transition at 220 K and exhibit giant magnetoresistance (GMR) with Delta R/R(o) = 85% and Delta R/R(H) > 550%. Without silver addition these self-doped films are non-magnetic, Enhancement in GMR up to 8% has been observed in superlattices having alternate magnetic and non-magnetic La1-xMnO3-delta layers.

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The demographic history of India was examined by comparing mtDNA sequences obtained from members of three culturally divergent Indian subpopulations (endogamous caste groups). While an inferred tree revealed some clustering according to caste affiliation, there was no clear separation into three genetically distinct groups along caste lines. Comparison of pairwise nucleotide difference distributions, however, did indicate a difference in growth patterns between two of the castes. The Brahmin population appears to have undergone either a rapid expansion or steady growth. The low-ranking Mukri caste, however, may have either maintained a roughly constant population size or undergone multiple bottlenecks during that period. Comparison of the Indian sequences to those obtained from other populations, using a tree, revealed that the Indian sequences, along with ah other non-African samples, form a starlike cluster. This cluster may represent a major expansion, possibly originating in southern Asia, taking place at some point after modern humans initially left Africa.

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The intensity ratio between L2-M45M45 and L3-M45M45 spectral features for both Fe and Co indicates significant tranfer of intensity from L2- to L3-M45M45 region due to Coster-Kronig L2-M45M45 transition. The L2-L3M45 transition can be suppressed by turning the photon energy between the L2 and L3 thresholds; however, the L3-M45M45 spectral shapes for Fe and Co do not change very significantly even at these photom energies unlike the cases of Ni, Cu and Zn, thus establishing that the M45-hole decays predominantly before the L3-hole Auger decay in the early transition elements in contrast to the late ones.

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The ductile-to-brittle transition temperature (DBTT) of a free-standing Pt-aluminide (PtAl) bondcoat was determined using the microtensile testing method and the effect of strain rate variation, in the range 10(-5) to 10(-1) s(-1), on the DBTT studied. The DBTT increased appreciably with the increase in strain rate. The activation energy determined for brittle-to-ductile transition, suggested that such transition is most likely associated with vacancy diffusion. Climb of aOE (c) 100 > dislocations observed in analysis of dislocation structure using a transmission electron microscope (TEM) supported the preceding mechanism.

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Using the d=infinity or local-approximation approach to the half-filled Hubbard model on a compressible lattice, we present a detailed study of the transport and structural properties near the paramagnetic metal-insulator transition. The results describe qualitatively most of the observed data in V2O3, including the metal-insulator-metal crossover [Kuwamoto et al., Phys. Rev. B 22, 2626 (1980)]. In addition, we discuss an interesting and intrinsic reentrance feature in the resistivity of the half-filled Hubbard model at high temperatures.

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Sliding tests were conducted, in air, of YTZP ceramic pins against steel discs at an applied pressure of 15.5 MPa over a speed range of 0.3 to 4.0 ms(-1). Pin wear was not detectable until 2.0 m s(-1), after which a finite but small wear rate was observed at 3.0 m s(-1), accompanied by a red glow at the contacting surface. A transition in wear behaviour and friction (mu) occurred at 4.0 ms(-1), increasing the former by over two orders of magnitude. Both mu and wear behaviour changed with time at 4.0 m s(-1). During initial periods mu was high and wear rate increased steadily with time accompanied by ceramic transfer onto the disc, which increased with time. When disc coverage exceeds a certain threshold value, mu decreased rapidly and the wear rate stabilized at a very high value. Metal transfer was not observed at any speed. High surface temperatures brought about significant adhesion between TZP and steel and this together with enhanced plastic deformation brought about a transition in wear behaviour.

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We report the synthesis of ternary transition metal nitrides of the formula MWN(2) for M=Mn, Co, Ni by reaction of the corresponding MWO(4) with NH3 gas at 600-700 degrees C. MnWN2 is isostructural with the already-known FeWN2, crystallizing in a hexagonal structure (a=2.901(2), b=16.48(5) Angstrom) related to LiMoN2. CoWN2 and NiWN2 (which are isostructural amongst themselves) adopt a different hexagonal structure with a smaller c parameter. While the Mn and Fe nitrides are semiconducting, the Co and Ni nitrides are semimetallic.

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A wide range of condensed matter systems traverse the metal-nonmetal transition. These include doped semiconductors, metal-ammonia solutions, metal clusters, metal alloys, transition metal oxides, and superconducting cuprates. Certain simple criteria, such as those due to Herzfeld and Mott, have been highly successful in explaining the metallicity of materials. In this article, we demonstrate the amazing effectiveness of these criteria and examine them in the light of recent experimental findings. We then discuss the Limitations in our understanding of the phenomenon of the metal-nonmetal transition.

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In this paper we have investigated the composition-driven metal-insulator (MI) transitions in two ABO3 classes of perovskite oxides (LaNixCo1-xO3 and NaxTayW1-yO3) in the composition range close to the critical region by using the tunneling technique. Two types of junctions (point-contact and planar) have been used for the investigation covering the temperature range 0.4 Ktransition is approached. However, there is a fairly strong thermal-smearing effect near the zero-bias region for ?V?<10kBT/e. $G(V)� has been found to follow a power law of the type G(V)=G0(1+{?V?/V*}n) with V*=const and with n=0.5 for samples in the weak-localization region. However, as the critical region of the MI transition is approached G0?0 and n?1. We also find that for samples lying in the weak-localization region ?=eV* has a well-defined dependence on ?0, the zero-temperature conductivity. The observed behavior can be explained either as a manifestation of depletion of density of states at the Fermi level as the MI transition is approached or as a manifestation of strong inelastic scattering in the junction region.