Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (similar to 8%), the dots formed from the Strannski-Krastanow (S-K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

Insertion of nickel nanoparticles in the interlayers of alpha-zirconium phosphate by the decomposition of the intercalated nickel acetate

By employing EXAFS and magnetic measurements, it is shown that nanoparticles of nickel along with those of NiO are incorporated between the layers of a-zirconium phosphate (ZrP) by the thermal decomposition of nickel acetate intercalated in ZrP. The nickel nanoparticles are superparamagnetic. Hydrogen reduction produces small ferromagnetic nickel particles, most of which appear to be outside the interlayer space of ZrP.

Coherent-mode decomposition of general anisotropic Gaussian Schell-model beams

We present a complete solution to the problem of coherent-mode decomposition of the most general anisotropic Gaussian Schell-model (AGSM) beams, which constitute a ten-parameter family. Our approach is based on symmetry considerations. Concepts and techniques familiar from the context of quantum mechanics in the two-dimensional plane are used to exploit the Sp(4, R) dynamical symmetry underlying the AGSM problem. We take advantage of the fact that the symplectic group of first-order optical system acts unitarily through the metaplectic operators on the Hilbert space of wave amplitudes over the transverse plane, and, using the Iwasawa decomposition for the metaplectic operator and the classic theorem of Williamson on the normal forms of positive definite symmetric matrices under linear canonical transformations, we demonstrate the unitary equivalence of the AGSM problem to a separable problem earlier studied by Li and Wolf [Opt. Lett. 7, 256 (1982)] and Gori and Guattari [Opt. Commun. 48, 7 (1983)]. This conn ction enables one to write down, almost by inspection, the coherent-mode decomposition of the general AGSM beam. A universal feature of the eigenvalue spectrum of the AGSM family is noted.

Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.

''Phase reversal'' of non-resonant microwave absorption in superconducting YBaCuO/CuO powder mixtures

Non-resonant microwave absorption is studied as a function of temperature and composition in superconducting YBa2Cu3O7/CuO ceramic composite samples. In pure YBa2Cu3O7 only normal field dependence of the absorption is observed, where as in composites an anomalous non-monotonic field dependence is seen. The results are explained using an extended resistively shunted junction model and invoking the occurrence of junctions with phase difference psi(0) such that pi/2 < psi(0) < 3 pi/2. Copyright (C) 1996 Elsevier Science Ltd

On the decomposition of ? phase in some rapidly quenched titanium-eutectoid alloys

The decomposition of the beta phase in rapidly quenched Ti-2.8 at. pet Co, Ti-5.4 at. pet Ni, Ti-4.5 at. pet, and 5.5 at. pet Cu alloys has been investigated by electron microscopy. During rapid quenching, two competitive phase transformations, namely martensitic and eutectoid transformation, have occurred, and the region of eutectoid transformation is extended due to the high cooling rates involved. The beta phase decomposed into nonlamellar eutectoid product (bainite) having a globular morphology in Ti-2.8 pet Co and Ti-4.5 pet Cu (hypoeutectoid) alloys. In the near-eutectoid Ti-5.5 pet Cu alloy, the decomposition occurred by a lamellar (pearlite) type, whereas in Ti-5.4 pct Ni (hypereutectoid), both morphologies were observed. The interfaces between the proeutectoid alpha and the intermetallic compound in the nonlamellar type as well as between the proeutectoid alpha and the pearlite were often found to be partially coherent. These findings are in agreement with the Lee and Aaronson model proposed recently for the evolution of bainite and pearlite structures during the solid-state transformations of some titanium-eutectoid alloys. The evolution of the Ti2Cu phase during rapid quenching involved the formation of a metastable phase closely related to an ''omega-type'' phase before the equilibrium phase formed. Further, the lamellar intermetallic compound Ti2Cu was found to evolve by a sympathetic nucleation process. Evidence is established for the sympathetic nucleation of the proeutectoid alpha crystals formed during rapid quenching.

Time-Resolved Photoluminescence and Microwave Conductivity at Semiconductor Electrodes: Depletion Layer Effects

Analytical expressions which include depletion layer effects on low-injection carrier relaxation are being presented for the first time here. Starting from the continuity equation for the minority carriers, we derive expressions for the output signal pertinent to time-resolved microwave and luminescence experiments. These are valid for the time domain that usually overlaps with the time scales of surface processes, such as charge transfer and trapping. Apart from the usual pulse form of illumination, theoretical expressions pertaining to other forms of illumination such as switch-on and switch-off transient modes, a periodic mode, and a steady state and their various inter-relationships are derived here. The expressions obtained are seen to be generalizations of existing flat-band low-injection results in the Limit of early or initial band bendings. The importance of the depletion layer as an experimental parameter is clearly seen in the limit of larger band bendings wherein it is shown, unlike the flat-band case, to exhibit pure exponential forms of carrier relaxation. Our results are consistent with the main conclusions of the numerical and experimental work published recently. Furthermore, this work provides the actual functional relationships between the applied potential and observed carrier decay. This should enable one to extract the surface kinetic parameters, after deciding on the dominant mode of carrier relaxation at the interface, whether charge transfer or trapping, by studying the potential dependence of the fate of relaxation.

Naphthalenes Image microwave irradiation induced rearrangement on montmorillonite K-10

Irradiation of 4-aryl-4-alkylhex-5-en-2-ones (e.g. 1a) or 5-aryl-4-alkylhex-5-en-2-ones (e.g. 2a) adsorbed on montmorillonite K-10 in a commercial microwave oven furnishes the multialkylated naphthalenes (e.g. 3).

Nonresonant microwave absorption studies of surface passivation of superconducting YBa2Cu3O7−δ thin films

The surfaces of laser ablated thin films of YBa2Cu3O7?? have been passivated with about 100 Å thick textured layer of Ca0.95Sr0.025Ba0.025Zr0.98Ta0.01Ti0.01O3. It is shown that this low loss dielectric material preserves the quality of the surface and also prolongs the aging process. The films (both passivated and as?deposited) have been studied for degradation on exposure to atmosphere and also on dipping directly in water. The technique of nonresonant microwave absorption is used to study the effects and extent of degradation in these films. © 1995 American Institute of Physics.

Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Homogenization of periodic structures via Bloch decomposition

In this paper, the classical problem of homogenization of elliptic operators in arbitrary domains with periodically oscillating coefficients is considered. Using Bloch wave decomposition, a new proof of convergence is furnished. It sheds new light and offers an alternate way to view the classical results. In a natural way, this method leads us to work in the Fourier space and thus in a framework dual to the one used by L. Tartar [Problemes d'Homogeneisation dans les Equations aux: Derivees Partielles, Cours Peccot au College de Prance, 1977] in his method of homogenization. Further, this technique offers a nontraditional way of calculating the homogenized coefficients which is easy to implement in the computer.

Metal-billed and hollow carbon nanotubes obtained by the decomposition of metal-containing free precursor molecules

Vapor-phase pyrolysis of Fe(CO)(5) in the presence of another carbon source such as CO or Ca He yields iron-filled or hollow nanotubes depending on the relative concentration of the carbon source. Essentially single-walled nanotubes are obtained when the C6H6/Fe(CO)(5) ratio is high. Pyrolysis of metallocenes yields metal-filled nanotubes and hollow nanotubes are obtained when metallocenes are pyrolyzed along with benzene. Metal-decorated nanotubes are also obtained by this method.

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

Combinatorial logic synthesis using technology directed decomposition

The aim of logic synthesis is to produce circuits which satisfy the given boolean function while meeting timing constraints and requiring the minimum silicon area. Logic synthesis involves two steps namely logic decomposition and technology mapping. Existing methods treat the two as separate operation. The traditional approach is to minimize the number of literals without considering the target technology during the decomposition phase. The decomposed expressions are then mapped on to the target technology to optimize the area, Timing optimization is carried out subsequently, A new approach which treats logic decomposition and technology maping as a single operation is presented. The logic decomposition is based on the parameters of the target technology. The area and timing optimization is carried out during logic decomposition phase itself. Results using MCNC circuits are presented to show that this method produces circuits which are 38% faster while requiring 14% increase in area.

Guest-Assisted Self-assembly of Organostannoxane Nanotubules on a Mica Surface

The reaction of n-BuSn(O)OH](n), and 9-hydroxy-9-fluorenecarboxylic acid in the presence of p-X-C6H4-OH (X = F, Br) afforded hydroxyl-rich hexameric organostannoxane prismanes. The crystal structures of these prismanes reveal guest-assisted supramolecular structures. Self-assembly of these compounds on a mica surface affords organooxotin nanotubules.