Evaporation-Condensation Synthesis and Optical Property of In(2)O(3)Octahedrons

Synthesis of In2O3 octahedrons is carried out successfully by heating Indium metal pieces in air ambient. The sample is characterized by scanning electron microscopy (SEM), Energy dispersive X-ray spectroscope (EDS), X-ray diffraction (XRD) and Raman spectroscopy. The as-prepared In2O3 octahedrons are highly crystalline and exhibit body centered cubic structure. Room temperature and temperature (293-453K) dependence photoluminescence reveals a deep levelbroad emission of yellowish-orange spectra centered around 605 nm. The emission is due to the presence of defect levels in the band gap of materials.

Enhanced UV detection by non-polar epitaxial GaN films

Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphology and strain of a-GaN epilayers was compared and the best condition was obtained for the nitrogen flow of 1 sccm. Atomic force microscopy was used to analyze the surface morphology while the strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by reciprocal space mapping technique. UV photo response of a-GaN film was measured after fabricating a metal-semiconductor-metal structure over the film with gold metal. The external quantum efficiency of the photodetectors fabricated in the (0002) polar and (11-20) nonpolar growth directions were compared in terms of responsivity and nonpolar GaN showed the best sensitivity at the cost of comparatively slow response time. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

YIn0.9Mn0.1O3-ZnO nano-pigment exhibiting intense blue color with impressive solar reflectance

The current study reports on the synthesis and characterization of a new inorganic nano-pigment with an intense blue color and high solar radiation reflective properties (70%). The nano-pigment YIn0.9Mn0.1O3-ZnO was synthesized by a sol-gel combustion method and characterized with the aid of X-Ray diffraction, Raman spectroscopy, Magnetic susceptibility, Transmission electron microscopy, UV ndash;vis-NIR diffuse reflectance spectroscopy and CIE-1976 L*a*b* color measurements. The Rietveld refinement of the XRD patterns of the developed nano-pigment disclosed the existence of YIn0.9Mn0.1O3 and ZnO in a 1:1 ratio with hexagonal crystal structures. For comparison, YIn0.9Mn0.1O3 was also synthesized by the sol gel combustion route and its optical properties compared with that of YIn0.9Mn0.1O3-ZnO. It is interesting to note that the developed YIn0.9Mn0.1O3-ZnO nano-pigmeht exhibits superior blue hue (b* = -40.55) and solar reflectance (R* = 70%) values as compared to the YIn0.9Mn0.1O3 nano-pigment (b* = -22.28, R* = 50%). Most importantly, the potential utility of the nano-pigment as a ``Cool Pigment'' was demonstrated by coating onto roofing materials like aluminum roofing sheets. (C) 2015 Elsevier Ltd. All rights reserved.

Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

Facile synthesis of Graphene Oxide/Double-stranded DNA composite liquid crystals and Hydrogels

Investigation of the interactions between graphene oxide (GO) and biomolecules is very crucial for the development of biomedical applications based on GO. This study reports the first observation of the spontaneous formation of self-assembled liquid crystals and three-dimensional hydrogels of graphene oxide with double-stranded DNA by simple mixing in an aqueous buffer media without unwinding double-stranded DNA to single-stranded DNA. The GO/dsDNA hydrogels have shown controlled porosity by changing the concentration of the components. The strong binding between dsDNA and graphene is proved by Raman spectroscopy.

Conversion of plastic waste into CNTs using Ni/Mo/MgO catalystAn optimization approach by mixture experiment

A combustion technique is used to study the synthesis of carbon nano tubes from waste plastic as a precursor and Ni/Mo/MgO as a catalyst. The catalytic activity of three components Ni, Mo, MgO is measured in terms of amount of carbon product obtained. Different proportions of metal ions are optimized using mixture experiment in Design expert software. D-optimal design technique is adopted due to nonsimplex region and presence of constraints in the mixture experiment. The activity of the components is observed to be interdependent and the component Ni is found to be more effective. The catalyst containing Ni0.8Mo0.1MgO0.1 yields more carbon product. The structure of catalyst and CNTs are studied by using SEM, XRD, and Raman spectroscopy. SEM analysis shows the formation of longer CNTs with average diameter of 40-50 nm.

Effect of W addition on the electrical switching of VO2 thin films

Vanadium Oxide has been a frontrunner in the field of oxide electronics because of its metal-insulator transition (MIT). The interplay of different structures of VO2 has played a crucial role in deciding the magnitude of the first order MIT. Substitution doping has been found to introduce different polymorphs of VO2. Hence the role of substitution doping in stabilizing the competing phases of VO2 in the thin film form remains underexplored. Consequently there have been reports both discounting and approving such a stabilization of competing phases in VO2. It is reported in the literature that the bandwidth of the hysteresis and transition temperature of VO2 can be tuned by substitutional doping of VO2 with W. In this work, we have adopted a novel technique called, Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) to deposit VO2 and W- doped VO2 as thin films. XRD and Raman spectroscopy were used to investigate the role of tungsten on the structure of VO2 thin films. Morphology of the thin films was found to be consisting of globular and porous nanoparticles of size similar to 20nm. Transition temperature decreased with the addition of W. We found that for 2.0 at % W doping in VO2, the transition temperature has reduced from 68 degrees C to 25 degrees C. It is noted that W-doping in the process of reducing the transition temperature, alters the local structure and also increases room temperature carrier concentration. (c) 2016 Author(s).

Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor

Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with A(g) symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with B-g symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving pi and sigma bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.