Electrochemical phase formation. Time-dependent nucleation and growth rates

The theory of phase formation is generalised for any arbitrary time dependence of nucleation and growth rates. Some sources of this time dependence are time-dependent potential inputs, ohmic drop and the ingestion effect. Particular cases, such as potentiostatic and, especially, linear potential sweep, are worked out for the two limiting cases of nucleation, namely instantaneous and progressive. The ohmic drop is discussed and a procedure for this correction is indicated. Recent results of Angerstein-Kozlowska, Conway and Klinger are critically investigated. Several earlier results are deduced as special cases. Evans' overlap formula is generalised for the time-dependent case and the equivalence between Avrami's and Evans' equations established.

Power Efficient Redundant Execution for Chip Multiprocessor

This paper describes the design of a power efficient microarchitecture for transient fault detection in chip multiprocessors (CMPs) We introduce a new per-core dynamic voltage and frequency scaling (DVFS) algorithm for our architecture that significantly reduces power dissipation for redundant execution with a minimal performance overhead. Using cycle accurate simulation combined with a simple first order power model, we estimate that our architecture reduces dynamic power dissipation in the redundant core by an mean value of 79% and a maximum of 85% with an associated mean performance overhead of only 1:2%

Optimizing resolution of signals in a low-IF receiver

The resolution of the digital signal path has a crucial impact on the design, performance and the power dissipation of the radio receiver data path, downstream from the ADC. The ADC quantization noise has been traditionally included with the Front End receiver noise in calculating the SNR as well as BER for the receiver. Using the IEEE 802.15.4 as an example, we show that this approach leads to an over-design for the ADC and the digital signal path, resulting in larger power. More accurate specifications for the front-end design can be obtained by making SNRreg a function of signal resolutions. We show that lower resolution signals provide adequate performance and quantization noise alone does not produce any bit-error. We find that a tight bandpass filter preceding the ADC can relax the resolution requirement and a 1-bit ADC degrades SNR by only 1.35 dB compared to 8-bit ADC. Signal resolution has a larger impact on the synchronization and a 1-bit ADC costs about 5 dB in SNR to maintain the same level of performance as a 8-bit ADC.

Register File Energy Optimization for Snooping Based Clustered VLIW Architectures

Frequent accesses to the register file make it one of the major sources of energy consumption in ILP architectures. The large number of functional units connected to a large unified register file in VLIW architectures make power dissipation in the register file even worse because of the need for a large number of ports. High power dissipation in a relatively smaller area occupied by a register file leads to a high power density in the register file and makes it one of the prime hot-spots. This makes it highly susceptible to the possibility of a catastrophic heatstroke. This in turn impacts the performance and cost because of the need for periodic cool down and sophisticated packaging and cooling techniques respectively. Clustered VLIW architectures partition the register file among clusters of functional units and reduce the number of ports required thereby reducing the power dissipation. However, we observe that the aggregate accesses to register files in clustered VLIW architectures (and associated energy consumption) become very high compared to the centralized VLIW architectures and this can be attributed to a large number of explicit inter-cluster communications. Snooping based clustered VLIW architectures provide very limited but very fast way of inter-cluster communication by allowing some of the functional units to directly read some of the operands from the register file of some of the other clusters. In this paper, we propose instruction scheduling algorithms that exploit the limited snooping capability to reduce the register file energy consumption on an average by 12% and 18% and improve the overall performance by 5% and 11% for a 2-clustered and a 4-clustered machine respectively, over an earlier state-of-the-art clustered scheduling algorithm when evaluated in the context of snooping based clustered VLIW architectures.

Bacterial transformation using micro-shock waves

Shock waves are one of the most competent mechanisms of energy dissipation observed in nature. We have developed a novel device to generate controlled micro-shock waves using an explosive-coated polymer tube. In this study, we harnessed these controlled micro-shock waves to develop a unique bacterial transformation method. The conditions were optimized for the maximum transformation efficiency in Escherichia coli. The maximum transformation efficiency was obtained when we used a 30 cm length polymer tube, 100 mu m thick metal foil, 200 mM CaCl(2), 1 ng/mu l plasmid DNA concentration, and 1 x 10(9) cell density. The highest transformation efficiency achieved (1 x 10(-5) transformants/cell) was at least 10 times greater than the previously reported ultrasound-mediated transformation (1 x 10(-6) transformants/cell). This method was also successfully employed for the efficient and reproducible transformation of Pseudomonas aeruginosa and Salmonella typhimurium. This novel method of transformation was shown to be as efficient as electroporation with the added advantage of better recovery of cells, reduced cost (40 times cheaper than a commercial electroporator), and growth phase independent transformation. (C) 2011 Elsevier Inc. All rights reserved.

High-temperature deformation processing maps for a NiTiCu shape memory alloy

The properties of widely used Ni-Ti-based shape memory alloys (SMAs) are highly sensitive to the underlying microstructure. Hence, controlling the evolution of microstructure during high-temperature deformation becomes important. In this article, the ``processing maps'' approach is utilized to identify the combination of temperature and strain rate for thermomechanical processing of a Ni(42)Ti(50)Cu(8) SMA. Uniaxial compression experiments were conducted in the temperature range of 800-1050 degrees C and at strain rate range of 10(-3) and 10(2) s(-1). Two-dimensional power dissipation efficiency and instability maps have been generated and various deformation mechanisms, which operate in different temperature and strain rate regimes, were identified with the aid of the maps and complementary microstructural analysis of the deformed specimens. Results show that the safe window for industrial processing of this alloy is in the range of 800-850 degrees C and at 0.1 s(-1), which leads to grain refinement and strain-free grains. Regions of the instability were identified, which result in strained microstructure, which in turn can affect the performance of the SMA.

Single Cavity Trapped Vortex Combustor Simulations

The present work describes steady and unsteady computation of reacting flow in a Trapped Vortex Combustor. The primary motivation of this study is to develop this concept into a working combustor in modern gas turbines. The present work is an effort towards development of an experimental model test rig for further understanding dynamics of a single cavity trapped vortex combustor. The steady computations with and without combustion have been done for L/D of 0.8, 1 and 1.2; also unsteady non-reacting flow simulation has been done for L/D of 1. Fuel used for the present study is methane and Eddy-Dissipation model has been used for combustion-turbulence interactions. For L/D of 0.8, combustion efficiency is maximum and pattern factor is minimum. Also, primary vortex in the cavity is more stable and symmetric for L/D of 0.8. From unsteady non-reacting flow simulations, it is found that there is no vortex shedding from the cavity but there are oscillations in the span-wise direction of the combustor.

Alternating current conduction behavior of excimer laser ablated SrBi2Nb2O9 thin films

Bi-layered Aurivillius compounds prove to be efficient candidates of nonvolatile memories. SrBi2Nb2O9 thin films were deposited by excimer laser ablation at low substrate temperature (400 °C) followed by an ex situ annealing at 750 °C. The polarization hysteresis behavior was confirmed by variation of polarization with the external applied electric field and also verified with capacitance versus voltage characteristics. The measured values of spontaneous and remnant polarizations were, respectively, 9 and 6 μC/cm2 with a coercive field of 90 kV/cm. The measured dielectric constant and dissipation factors at 100 kHz were 220 and 0.02, respectively. The frequency analysis of dielectric and ac conduction properties showed a distribution of relaxation times due to the presence of multiple grain boundaries in the films. The values of activation energies from the dissipation factor and grain interior resistance were found to be 0.9 and 1.3 eV, respectively. The deviation in these values was attributed to the energetic conditions of the grain boundaries and bulk grains. The macroscopic relaxation phenomenon is controlled by the higher resistive component in a film, such as grain boundaries at lower temperatures, which was highlighted in the present article in close relation to interior grain relaxation and conduction properties.

Growth and characterization of excimer laser-ablated BaBi2Nb2O9 thin films

The pulsed-laser ablation technique has been employed to deposit polycrystalline thin films of layered-structure ferroelectric BaBi2Nb2O9 (BBN). Low-substrate-temperature growth (Ts = 400 °C) followed by ex situ annealing at 800 °C for 30 min was performed to obtain a preferred orientation. Ferroelectricity in the films was verified by examining the polarization with the applied electric field and was also confirmed from the capacitance–voltage characteristics. The films exhibited well-defined hysteresis loops, and the values of saturation (Ps) and remanent (Pr) polarization were 4.0 and 1.2 μC/cm2, respectively. The room-temperature dielectric constant and dissipation factor were 214 and 0.04, respectively, at a frequency of 100 kHz. A phase transition from a ferroelectric to paraelectric state of the BBN thin film was observed at 220 °C. The dissipation factor of the film was observed to increase after the phase transition due to a probable influence of dc conduction at high temperatures. The real and imaginary part of the dielectric constant also exhibited strong frequency dispersion at high temperatures.

Low‐voltage varistors based on zinc antimony spinel Zn7Sb2O12

It is possible to prepare low‐voltage varistors from the zinc antimony spinel Zn7Sb2O12 with breakdown voltages in the range of 3–20 V and nonlinearity coefficient α=7–15. The varistor property is due to the formation of high ohmic potential barriers at the grain boundary regions on low‐ohmic n‐type grain interiors of the polycrystalline samples. The method of preparation of the spinel, synthesized by coprecipitation followed by annealing under restricted partial pressures of oxygen, controls the mixed valence states for antimony, namely, Sb3+ and Sb5+. This is critical in attaining high nonlinearity and lower breakdown voltages.

Oxygen displacement in a 107Ag17+ ion irradiated Bi2Sr2CaCu2O8 single crystal

We have studied the magnetic field (H∥c) dependent rf dissipation (Hrf∥a) in an as-grown Bi2Sr2CaCu2O8 single crystal prior to and after irradiation with 250 MeV 107Ag17+ ions. In a comparison of the responses from the as-grown crystal with an air-annealed crystal, features due to oxygen deficient regions acting as weak links in the former are identified. These features disappear immediately after irradiation of the as-grown crystal. We attribute such behavior to the displacement of oxygen from columnar tracks to deficient regions thus eliminating the weak links. Losses from the same irradiated as-grown crystal stored at 300 K for 60 days show that the features similar but not identical to those observed in the pristine state have reappeared implying that the displaced oxygen is in a metastable configuration in the deficient regions and hence is mobile due to thermal effects even at 300 K.

Field-induced dielectric properties of laser ablated antiferroelectric (Pb0.99Nb0.02)(Zr0.57Sn0.38Ti0.05)0.98O3 thin films

Niobium-modified lead zirconate stannate titanate antiferroelectric thin films with the chemical composition of (Pb0.99Nb0.02)(Zr0.57Sn0.38Ti0.05)0.98O3 were deposited by pulsed excimer laser ablation technique on Pt-coated Si substrates. Field-induced phase transition from antiferroelectric to ferroelectric properties was studied at different fields as a function of temperature. The field forced ferroelectric phase transition was elucidated by the presence of double-polarization hysteresis and double-butterfly characteristics from polarization versus applied electric field and capacitance and voltage measurements, respectively. The measured forward and reverse switching fields were 25 kV/cm and 77 kV/cm, respectively. The measured dielectric constant and dissipation factor were 540 and 0.001 at 100 kHz, respectively, at room temperature.

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

Barium zirconium titanate [Ba(Zr0.05Ti0.95)O3, BZT] thin films were prepared by pulsed laser ablation technique and dc leakage current conduction behavior was extensively studied. The dc leakage behavior study is essential, as it leads to degradation of the data storage devices. The current-voltage (I-V) of the thin films showed an Ohmic behavior for the electric field strength lower than 7.5 MV/m. Nonlinearity in the current density-voltage (J-V) behavior has been observed at an electric field above 7.5 MV/m. Different conduction mechanisms have been thought to be responsible for the overall I-V characteristics of BZT thin films. The J-V behavior of BZT thin films was found to follow Lampert’s theory of space charge limited conduction similar to what is observed in an insulator with charge trapping moiety. The Ohmic and trap filled limited regions have been explicitly observed in the J-V curves, where the saturation prevailed after a voltage of 6.5 V referring the onset of a trap-free square region. Two different activation energy values of 1.155 and 0.325 eV corresponding to two different regions have been observed in the Arrhenius plot, which was attributed to two different types of trap levels present in the film, namely, deep and shallow traps.

On the athermal nature of the beta to omega transformation

One characteristic feature of the athermal beta -> omega transformation is the short time scale of the transformation. So far, no clear understanding of this issue exists. Here we construct a model that includes contributions from a Landau sixth-order free energy density, kinetic energy due to displacement, and the Rayleigh dissipation function to account for the dissipation arising from the rapid movement of the parent product interface during rapid nucleation. We also include the contribution from omega-like fluctuations to local stress. The model shows that the transformation is complete on a time scale comparable to the velocity of sound. The estimated nucleation rate is several orders higher than that for diffusion-controlled transformations. The model predicts that the athermal omega phase is limited to a certain range of alloying composition. The estimated nucleation rate and the size of ``isothermal'' particles beyond 17% Nb are also consistent with experimental results. The model provides an explanation for the reprecipitation process of the omega particles in the ``cleared'' channels formed during deformation of omega-forming alloys. The model also predicts that acoustic emission should be detectable during the formation of the athermal phase. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Non-resonant rf absorption evidence for reentrant melting of vortex lattice in Bi2Sr2CaCu2O8 single crystals

We have studied the magnetic field dependent rf (20 MHz) losses in Bi2Sr2CaCu2O8 single crystals in the low field and high temperature regime. Above HCl the dissipation begins to decrease as the field is increased and exhibits a minimum at HM>HCl. For H>HM the loss increases monotonically. We attribute the decrease in loss above HCl to the stiffening of the vortex lines due to the attractive electromagnetic interaction between the 2D vortices (that comprise the vortex line at low fields) in adjacent CuO bilayers. The minimum at HM implies that the vortex lines are stiffest and hence represents a transition into vortex solid state from the narrow vortex liquid in the vicinity of HCl. The increase in loss for H>HM marks the melting of the vortex lattice and hence a second transition into vortex liquid regime. We discuss our results in the light of recent theory of reentrant melting of the vortex lattice by G. Blatter et al. (Phys. Rev. B 54, 72 (1996)).