Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition

Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage (VFB) and charge trapping and de-trapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400°C. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ∼35 mV was observed on annealing the sample at 200°C confirming the excellent suitability of this dielectric

On the criteria for reverse transition in a two-dimensional boundary layer flow

Experiments on reverse transition were conducted in two-dimensional accelerated incompressible turbulent boundary layers. Mean velocity profiles, longitudinal velocity fluctuations $\tilde{u}^{\prime}(=(\overline{u^{\prime 2}})^{\frac{1}{2}})$ and the wall-shearing stress (TW) were measured. The mean velocity profiles show that the wall region adjusts itself to laminar conditions earlier than the outer region. During the reverse transition process, increases in the shape parameter (H) are accompanied by a decrease in the skin friction coefficient (Cf). Profiles of turbulent intensity (u’2) exhibit near similarity in the turbulence decay region. The breakdown of the law of the wall is characterized by the parameter \[ \Delta_p (=\nu[dP/dx]/\rho U^{*3}) = - 0.02, \] where U* is the friction velocity. Downstream of this region the decay of $\tilde{u}^{\prime}$ fluctuations occurred when the momentum thickness Reynolds number (R) decreased roughly below 400.

Axisymmetric turbulent boundary layer along a circular cylinder at constant pressure

A constant-pressure axisymmetric turbulent boundary layer along a circular cylinder of radius a is studied at large values of the frictional Reynolds number a+ (based upon a) with the boundary-layer thickness δ of order a. Using the equations of mean motion and the method of matched asymptotic expansions, it is shown that the flow can be described by the same two limit processes (inner and outer) as are used in two-dimensional flow. The condition that the two expansions match requires the existence, at the lowest order, of a log region in the usual two-dimensional co-ordinates (u+, y+). Examination of available experimental data shows that substantial log regions do in fact exist but that the intercept is possibly not a universal constant. Similarly, the solution in the outer layer leads to a defect law of the same form as in two-dimensional flow; experiment shows that the intercept in the defect law depends on δ/a. It is concluded that, except in those extreme situations where a+ is small (in which case the boundary layer may not anyway be in a fully developed turbulent state), the simplest analysis of axisymmetric flow will be to use the two-dimensional laws with parameters that now depend on a+ or δ/a as appropriate.

Novel Algorithm for estimation of Swell Pressure of Fine Grained Soils Based on Diffuse Double Layer (DDL) Theory

Use of engineered landfills for the disposal of industrial wastes is currently a common practice. Bentonite is attracting a greater attention not only as capping and lining materials in landfills but also as buffer and backfill materials for repositories of high-level nuclear waste around the world. In the design of buffer and backfill materials, it is important to know the swelling pressures of compacted bentonite with different electrolyte solutions. The theoretical studies on swell pressure behaviour are all based on Diffuse Double Layer (DDL) theory. To establish a relation between the swell pressure and void ratio of the soil, it is necessary to calculate the mid-plane potential in the diffuse part of the interacting ionic double layers. The difficulty in these calculations is the elliptic integral involved in the relation between half space distance and mid plane potential. Several investigators circumvented this problem using indirect methods or by using cumbersome numerical techniques. In this work, a novel approach is proposed for theoretical estimations of swell pressures of fine-grained soil from the DDL theory. The proposed approach circumvents the complex computations in establishing the relationship between mid-plane potential and diffused plates’ distances in other words, between swell pressure and void ratio.

Influence of the highest occupied molecular orbital energy level of the donor material on the effectiveness of the anode buffer layer in organic solar cells

Efficiency of organic photovoltaic cells based on organic electron donor/organic electron acceptor junctions can be strongly improved when the transparent conductive Anode is coated with a Buffer Layer (ABL). Here, the effects of a metal (gold) or oxide (molybdenum oxide) ABL are reported, as a function of the Highest Occupied Molecular Orbital (HOMO) of different electron donors. The results indicate that a good matching between the work function of the anode and the highest occupied molecular orbital of the donor material is the major factor limiting the hole transfer efficiency. Indeed, gold is efficient as ABL only when the HOMO of the organic donor is close to its work function Phi(Au). Therefore we show that the MoO(3) oxide has a wider field of application as ABL than gold. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim