Nonvanishing of Koecher-Maass series attached to Siegel cusp forms

We prove a nonvanishing result for Koecher-Maass series attached to Siegel cusp forms of weight k and degree n in certain strips on the complex plane. When n = 2, we prove such a result for forms orthogonal to the space of the Saito-Kurokawa lifts `up to finitely many exceptions', in bounded regions. (C) 2015 Elsevier Inc. All rights reserved.

Vacancy mediated clipping of multi-layered graphene: A precursor for 1, 2 and 3D carbon structures

Using first principles calculations, we show that the overlapping defects in bi-layer graphene (both AA-and AB-stacked) interact forming inter-layer covalent bonds, giving rise to two-dimensional (2D) clipped structures, without explicit use of functional groups. These clipped structures can be transformed into one-dimensional (1D) double wall nanotubes (DWCNT) or multi-layered three dimensional (3D) bulk structures. These clipped structures show good mechanical strength due to covalent bonding between multi-layers. Clipping also provides a unique way to simultaneously harness the conductivity of both walls of a double wall nanotube through covalently bonded scattering junctions. With additional conducting channels and improved mechanical stability, these clipped structures can lead to a myriad of applications in novel devices. (C) 2015 Elsevier Ltd. All rights reserved.

Bearing capacity of a circular foundation on layered sand-clay media

The bearing capacity of a circular footing lying over fully cohesive strata, with an overlaying sand layer, is computed using the axisymmetric lower bound limit analysis with finite elements and linear optimization. The effects of the thickness and the internal friction angle of the sand are examined for different combinations of c(u)/(gamma b) and q, where c(u)=the undrained shear strength of the cohesive strata, gamma=the unit weight of either layer, b=the footing radius, and q=the surcharge pressure. The results are given in the form of a ratio (eta) of the bearing capacity with an overlaying sand layer to that for a footing lying directly over clayey strata. An overlaying medium dense to dense sand layer considerably improves the bearing capacity. The improvement continuously increases with decreases in c(u)/(gamma b) and increases in phi and q/(gamma b). A certain optimum thickness of the sand layer exists beyond which no further improvement occurs. This optimum thickness increases with an increase in 0 and q and with a decrease in c(u)/(gamma b). Failure patterns are also drawn to examine the inclusion of the sand layer. (C) 2015 The Japanese Geotechnical Society. Production and hosting by Elsevier B.V. All rights reserved.

Optical-Phonon-Limited High-Field Transport in Layered Materials

An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured v(sat) is discussed and compared with the theoretically predicted dependence over a range of temperatures.