Mitochondria-Targeting Iron(III) Catecholates for Photoactivated Anticancer Activity under Red Light

Iron(III) catecholates Fe(R-bpa)(R-dopa)Cl] (1, 2) with a triphenylphosphonium (TPP) moiety, where R-bpa is 2-(TPP-N,N-bis((pyridin-2-yl)methyl)ethanamine) chloride (TPPbpa) and R-dopa is 4-{2-(anthracen-9-yl)methylamino]ethyl}benzene-1,2-diol (andopa, 1) or 4-{2-(pyren-1-yl)-methylamino]ethyl}benzene-1,2-diol (pydopa, 2), were synthesized and their photocytotoxicity studied. Complexes 3 and 4 with phenyl-N,N-bis(pyridin-2-yl)methyl]methanamine (phbpa) were used as controls. The catecholate complexes showed an absorption band near 720 nm. The 5e(-) paramagnetic complexes showed a Fe-III/Fe-II irreversible response near -0.45 V and a quasi-reversible catechol/semiquinone couple near 0.5 V versus saturated calomel electrode (SCE) in DMF/0.1 M tetrabutylammonium perchlorate. They showed photocytotoxicity in red/visible light in HeLa, HaCaT, MCF-7, and A549 cells. Complexes 1 and 2 displayed mitochondrial localization, reactive oxygen species (ROS) generation under red light, and apoptotic cell death. Control complexes 3 and 4 exhibited uniform distribution throughout the cell. The complexes showed DNA photocleavage under red light (785 nm), forming hydroxyl radicals as the ROS.

Design Optimization of Thin-Film Transistors Based on a Metal-Substrate-Semiconductor Architecture for High DC Voltage Sensing

We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation.