325 resultados para laser processing


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The processing map for hot working of Al alloy 2014-20vol.%Al2O3 particulate-reinforced cast-plus-extruded composite material has been generated covering the temperature range 300-500 degrees C and the strain rate range 0.001-10 s(-1) based on the dynamic materials model. The efficiency eta of power dissipation given by 2m/(m + 1), where m is the strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. A domain of superplasticity has been identified, with a peak efficiency of 62% occurring at 500 degrees C and 0.001 s(-1). The characteristics of this domain have been studied with the help of microstructural evaluation and hot-ductility measurements. Microstructural instability is predicted at higher strain rates above (ls(-1)) and lower temperatures (less than 350 degrees C).

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The bipolar point spread function (PSF) corresponding to the Wiener filter tor correcting linear-motion-blurred pictures is implemented in a noncoherent optical processor. The following two approaches are taken for this implementation: (1) the PSF is modulated and biased so that the resulting function is non-negative and (2) the PSF is split into its positive and sign-reversed negative parts, and these two parts are dealt with separately. The phase problem associated with arriving at the pupil function from these modified PSFs is solved using both analytical and combined analytical-iterative techniques available in the literature. The designed pupil functions are experimentally implemented, and deblurring in a noncoherent processor is demonstrated. The postprocessing required (i.e., demodulation in the first approach to modulating the PSF and intensity subtraction in the second approach) are carried out either in a coherent processor or with the help of a PC-based vision system. The deblurred outputs are presented.

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Application of ultrafast lasers to chemistry and biology has been an active area of research in the international scene for over a decade for physical and biophysical chemists. Perhaps, ultrafast laser spectroscopy is one of the most versatile tools available today to experimentally study structure and dynamics in the time domain of nanoseconds (10(-9) sec) to femtoseconds (10(-15) sec). In this article we attempt to highlight some of the recent developments in ultrafast laser spectroscopy with particular reference to vibrational spectroscopy, viz. infrared and Raman spectroscopy, in the above time domain.

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The hot-working characteristics of IN-718 are studied in the temperature range 900 °C to 1200 °C and strain rate range 0.001 to 100 s−1 using hot compression tests. Processing maps for hot working are developed on the basis of the strain-rate sensitivity variations with temperature and strain rate and interpreted using a dynamic materials model. The map exhibits two domains of dynamic recrystallization (DRX): one occurring at 950 °C and 0.001 s−1 with an efficiency of power dissipation of 37 pct and the other at 1200 °C and 0.1 s−1 with an efficiency of 40 pct. Dynamic recrystallization in the former domain is nucleated by the δ(Ni3Nb) precipitates and results in fine-grained microstructure. In the high-temperature DRX domain, carbides dissolve in the matrix and make interstitial carbon atoms available for increasing the rate of dislocation generation for DRX nucleation. It is recommended that IN-718 may be hot-forged initially at 1200 °C and 0.1 s−1 and finish-forged at 950 °C and 0.001 s−1 so that fine-grained structure may be achieved. The available forging practice validates these results from processing maps. At temperatures lower than 1000 °C and strain rates higher than 1 s−1 the material exhibits adiabatic shear bands. Also, at temperatures higher than 1150°C and strain rates more than 1s−1, IN-718 exhibits intercrystalline cracking. Both these regimes may be avoided in hotworking IN-718.

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Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

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The characteristics of hot deformation of INCONEL alloy MA 754 have been studied processing maps obtained on the basis of flow stress data generated in compression in the temperature range 700-degrees-C to 1150-degrees-C and strain rate range 0.001 to 100 s-1. The map exhibited three domains. (1) A domain of dynamic recovery occurs in the temperature range 800-degrees-C to 1075-degrees-C and strain rate range 0.02 to 2 s-1, with a peak efficiency of 18 pct occurring at 950-degrees-C and 0.1 s-1. Transmission electron microscope (TEM) micrographs revealed stable subgrain structure in this domain with the subgrain size increasing exponentially with an increase in temperature. (2) A domain exhibiting grain boundary cracking occurs at temperatures lower than 800-degrees-C and strain rates lower than 0.01 s-1. (3) A domain exhibiting intense grain boundary cavitation occurs at temperatures higher than 1075-degrees-C. The material did not exhibit a dynamic recrystallization (DRX) domain, unlike other superalloys. At strain rates higher than about 1 s-1, the material exhibits flow instabilities manifesting as kinking of the elongated grains and adiabatic shear bands. The material may be safely worked in the domain of dynamic recovery but can only be statically recrystallized.

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The hot-working characteristics of IN-718 are studied in the temperature range 900 degrees C to 1200 degrees C and strain rate range 0.001 to 100 s(-1) using hot compression tests. Processing maps for hot working are developed on the basis of the strain-rate sensitivity variations with temperature and strain rate and interpreted using a dynamic materials model. The map exhibits two domains of dynamic recrystallization (DRX): one occurring at 950 degrees C and 0.001 s(-1) with an efficiency of power dissipation of 37 pct and the other at 1200 degrees C and 0.1 s(-1) with an efficiency of 40 pct. Dynamic recrystallization in the former domain is nucleated by the delta(Ni3Nb) precipitates and results in fine-grained microstructure. In the high-temperature DRX domain, carbides dissolve in the matrix and make interstitial carbon atoms available for increasing the rate of dislocation generation for DRX nucleation. It is recommended that IN-718 may be hot-forged initially at 1200 degrees C and 0.1 s(-1) and finish-forged at 950 degrees C and 0.001 s(-1) so that fine-grained structure may be achieved. The available forging practice validates these results from processing maps. At temperatures lower than 1000 degrees C and strain rates higher than 1 s(-1), the material exhibits adiabatic shear bands. Also, at temperatures higher than 1150 degrees C and strain rates more than 1 s(-1), IN-718 exhibits intercrystalline cracking. Both these regimes may be avoided in hot-working IN-718.

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The hot deformation characteristics of IN 600 nickel alloy are studied using hot compression testing in the temperature range 850-1200-degrees-C and strain rate range 0.001-100 s-1. A processing map for hot working is developed on the basis of the data obtained, using the principles of dynamic materials modelling. The map exhibits a single domain with a peak efficiency of power dissipation of 48% occurring at 1200-degrees-C and 0.2 s-1, at which the material undergoes dynamic recrystallisation (DRX). These are the optimum conditions for hot working of IN 600. At strain rates higher than 1 s-1, the material exhibits flow localisation and its microstructure consists of localised bands of fine recrystallised grains. The presence of iron in the Ni-Cr alloy narrows the DRX domain owing to a higher temperature required for carbide dissolution, which is essential for the occurrence of DRX. The efficiency of DRX in Ni-Cr is, however, enhanced by iron addition.

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Compressive stress-strain curves have been generated over a range of temperatures (900-1100-degrees-C and strain rates (0.001-100 s-1) for two starting structures consisting of lath alpha2 and equiaxed alpha2 in a Ti-24Al-11Nb alloy. The data from these tests have been analysed in terms of a dynamic model for processing. The results define domains of strain rate and temperature in which dynamic recrystallization of alpha2 occurs for both starting structures. The rate controlling process for dynamic recrystallization is suggested to be cross-slip in the alpha2 phase. A region of processing instability has also been defined within which shear bands form in the lath structure. Recrystallization of the beta phase is shown to occur for different combinations of strain rate and temperature from those in which the alpha2 phase recrystallizes dynamically

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Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

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The characteristics of the hot deformation of Zr-2.5Nb (wt-%) in the temperature range 650-950 degrees C and in the strain rate range 0.001-100 s(-1) have been studied using hot compression testing. Two different preform microstructures: equiaxed (alpha + beta) and beta transformed have been investigated. For this study, the approach of processing maps has been adopted and their interpretation carried out using the dynamic materials model. The efficiency of power dissipation given by [2m/(m + 1)], where m is the strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. A domain of dynamic recrystallisation has been identified in the maps of equiaxed (alpha + beta) and beta transformed preforms. In the case of equiaxed (alpha + beta), the stress-strain curves are steady state and the dynamic recrystallisation domain in the map occurs with a peak efficiency of 45% at 850 degrees C and 0.001 s(-1). On the other hand the beta transformed preform exhibits stress-strain curves with continuous flow softening. The corresponding processing map shows a domain of dynamic recrystallisation occurring by the shearing of alpha platelets followed by globularisation with a peak efficiency of 54% at 750 degrees C and 0.001 s(-1). The characteristics of dynamic recrystallisation are analysed on the basis of a simple model which considers the rates of nucleation and growth of recrystallised gains. Calculations show that these two rates are nearly equal and that the nucleation of dynamic recrystallisation is essentially controlled by mechanical recovery involving the cross-slip of screw dislocations. Analysis of flow instabilities using a continuum criterion revealed that Zi-2.5Nb exhibits flow localisation at temperatures lower than 700 degrees C and strain rates higher than 1 s(-1).

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Drop tube provides a low-cost alternative to study the influence of microgravity in materials processing. In the present paper, the current status of the drop tubes and associated experiments on materials processing are reviewed. Emphasis is placed on the advantages and limitations of these studies. It is pointed out that despite size limitation, large opportunities exist to study the fundamental aspects of the influence of gravity in materials processing.

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The characteristics of hot deformation of beta-quenched Zr-2.5Nb-0.5Cu in the temperature range 650-1050 degrees C and in the strain rate range 0.001-100 s(-1) have been studied using hot compression testing. For this study, the approach of processing maps has been adopted and their interpretation done using the Dynamic Materials Model. The efficiency of power dissipation given by [2m/(m + 1)], where m is strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. The processing map for Zr-2.5Nb-0.5Cu within (alpha + beta) phase field showed a domain of dynamic recrystallization, occurring by shearing of alpha-platelets followed by spheroidization, with a peak efficiency of 48% at 750 degrees C and 0.001 s(-1). The stress-strain curves in this domain had features of continuous flow softening and all these are similar to that in Zr-2.5Nb alloy. In the beta-phase field, a second domain with a peak efficiency of 47% occurred at 1050 degrees C and 0.001 s(-1) and this domain is correlated with the superplasticity of beta-phase. The beta-deformation characteristics of this alloy are similar to that observed in pure beta-zirconium with large grain size. Analysis of flow instabilities using a continuum criterion revealed that the Zr-2.5Nb-0.5Cu exhibits flow localization at temperatures higher than 800 degrees C and strain rates higher than about 30 s(-1) and that the addition of copper to Zr-2.5Nb reduces its susceptibility to flow instability, particularly in the (alpha + beta) phase field.

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The development of microstructure in 316L stainless steel during industrial hot forming operations including press forging (strain rate of 0 . 15 s(-1)), rolling/extrusion (strain rate of 2-8 . 8 s(-1)), and hammer forging (strain rate of 100 s(-1)) at different temperatures in the range 600-1200 degrees C was studied with a view to validating the predictions of the processing map. The results showed that good col relation existed between the regimes indicated in the map and the product microstructures. The 316L stainless steel exhibited unstable flow in the form of flow localisation when hammer forged at temperatures above 900 degrees C, rolled below 1000 degrees C, or press forged below 900 degrees C. All these conditions must therefore be avoided in mechanical processing of the material. Conversely, in order to obtain defect free microstructures, ideally the material should be rolled at temperatures above 1100 degrees C, press forged at temperatures above 1000 degrees C, or hammer forged in the temperature range 600-900 degrees C. (C) 1996 The Institute of Materials.

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Zinc oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique on corning glass substrate. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along c-direction with wurtzite structure and highly transparent with an average transmittance of more than 80% in the visible wavelength region. The energy band gap was found to decrease with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to decrease initially with doping concentration and subsequently increases. IZO with 1% of indium showed the lowest resistivity of 2.41 x 10(-2) Omega cm and large transmittance in the visible wavelength region. Especially 1% IZO thin film was observed to be a suitable transparent conducting oxide material to potentially replace indium tin oxide. (C) 2011 Elsevier B.V. All rights reserved.