194 resultados para ZnO Microflowers


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Hollow nanomaterials have attracted a lot of interest by virtue of their wide range of applications that arise primarily due to their unique architecture. A common strategy to synthesize hollow nanomaterials is by nucleation of the shell material over a preformed core and subsequent dissolution of the core in the second step. Herein an ultrafast, microwave route has been demonstrated, to synthesize PdO nanotubes in a single step using ZnO as a sacrificial template. The mechanism of the nanotube formation has been investigated in detail using control experiments. By tuning the starting ratio of PdCl2 : ZnO, hollow to hybrid PdO nanostructures could be obtained using the same method. Conversion of the PdO to Pd nanotubes has been shown by simple NaBH4 treatment. The thermal stability of the PdO nanotubes has been studied. The insights presented here are general and applicable for the synthesis of hybrids/hollow structures in other systems as well.

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Ferroelectricity in ZnO is an unlikely physical phenomenon. Here, we show ferroelectricity in undoped 001] ZnO nanorods due to zinc vacancies. Generation of ferroelectricity in a ZnO nanorod effectively increases its piezoelectricity and turns the ZnO nanorod into an ultrahigh-piezoelectric material. Here using piezoelectric force microscopy (PFM), it is observed that increasing the frequency of the AC excitation electric field decreases the effective d(33). Subsequently, the existence of a reversible permanent electric dipole is also found from the P-E hysteresis loop of the ZnO nanorods. Under a high resolution transmission electron microscope (HRTEM), we observe a zinc blende stacking in the wurtzite stacking of a single nanorod along the growth axis. The zinc blende nature of this defect is also supported by the X-ray diffraction (XRD) and Raman spectra. The presence of zinc vacancies in this basal stacking fault modulates p-d hybridization of the ZnO nanorod and produces a magnetic moment through the adjacent oxygen ions. This in turn induces a reversible electric dipole in the non-centrosymmetric nanostructure and is responsible for the ultrahigh-piezoelectric response in these undoped ZnO nanorods. We reveal that this defect engineered ZnO can be considered to be in the competitive class of ultrahigh-piezoelectric nanomaterials for energy harvesting and electromechanical device fabrication.

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A heterostructure of graphene and zinc oxide (ZnO) nanowires (NWs) is fabricated by sandwiching an array of ZnO NWs between two graphene layers for an ultraviolet (UV) photodetector. This unique structure allows NWs to be in direct contact with the graphene layers, minimizing the effect of the substrate or metal electrodes. In this device, graphene layers act as highly conducting electrodes with a high mobility of the generated charge carriers. An excellent sensitivity is demonstrated towards UV illumination, with a reversible photoresponse even for a short period of UV illumination. Response and recovery times of a few milliseconds demonstrated a much faster photoresponse than most of the conventional ZnO nanostructure-based photodetectors. It is shown that the generation of a built-in electric field between the interface of graphene and ZnO NWs effectively contributes to the separation of photogenerated electron-hole pairs for photocurrent generation without applying any external bias. Upon application of external bias voltage, the electric field further increases the drift velocity of photogenerated electrons by reducing the charge recombination rates, and results in an enhancement of the photocurrent. Therefore, the graphene-based heterostructure (G/ZnO NW/G) opens avenues to constructing a novel heterostructure with a combination of two functionally dissimilar materials.

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A heterostructure of graphene and zinc oxide (ZnO) nanowires (NWs) is fabricated by sandwiching an array of ZnO NWs between two graphene layers for an ultraviolet (UV) photodetector. This unique structure allows NWs to be in direct contact with the graphene layers, minimizing the effect of the substrate or metal electrodes. In this device, graphene layers act as highly conducting electrodes with a high mobility of the generated charge carriers. An excellent sensitivity is demonstrated towards UV illumination, with a reversible photoresponse even for a short period of UV illumination. Response and recovery times of a few milliseconds demonstrated a much faster photoresponse than most of the conventional ZnO nanostructure-based photodetectors. It is shown that the generation of a built-in electric field between the interface of graphene and ZnO NWs effectively contributes to the separation of photogenerated electron-hole pairs for photocurrent generation without applying any external bias. Upon application of external bias voltage, the electric field further increases the drift velocity of photogenerated electrons by reducing the charge recombination rates, and results in an enhancement of the photocurrent. Therefore, the graphene-based heterostructure (G/ZnO NW/G) opens avenues to constructing a novel heterostructure with a combination of two functionally dissimilar materials.

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Quantifying and characterising atomic defects in nanocrystals is difficult and low-throughput using the existing methods such as high resolution transmission electron microscopy (HRTEM). In this article, using a defocused wide-field optical imaging technique, we demonstrate that a single ultrahigh-piezoelectric ZnO nanorod contains a single defect site. We model the observed dipole-emission patterns from optical imaging with a multi-dimensional dipole and find that the experimentally observed dipole pattern and model-calculated patterns are in excellent agreement. This agreement suggests the presence of vertically oriented degenerate-transition-dipoles in vertically aligned ZnO nanorods. The HRTEM of the ZnO nanorod shows the presence of a stacking fault, which generates a localised quantum well induced degenerate-transition-dipole. Finally, we elucidate that defocused wide-field imaging can be widely used to characterise defects in nanomaterials to answer many difficult questions concerning the performance of low-dimensional devices, such as in energy harvesting, advanced metal-oxide-semiconductor storage, and nanoelectromechanical and nanophotonic devices.

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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

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GdxZn1-xO (x = 0, 0.02, 0.04 and 0.06) nanostructures have been synthesized using sol-gel technique and characterized to understand their structural and magnetic properties. X-ray diffraction (XRD) results show that Gd (0, 2, 4 and 6 %)-doped ZnO nanostructures crystallized in the wurtzite structure having space group C3(v) (P6(3)mc). Photoluminescence and Raman studies of Gd-doped ZnO powder show the formation of singly ionized oxygen vacancies. X-ray absorption spectroscopy reveals that Gd replaces the Zn atoms in the host lattice and maintains the crystal symmetry with slight lattice distortion. Gd L-3-edge spectra reveal charge transfer between Zn and Gd dopant ions. O K-edge spectra also depict the charge transfer through the oxygen bridge (Gd-O-Zn). Weak magnetic ordering is observed in all Gd-doped ZnO samples.

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We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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We report the synthesis of ZnO nanowires in ambient air at 650 degrees C by a single-step vapor transport method using two different sources Zn (ZnO nanowires-I) and Zn:Cu (ZnO nanowires-II). The Zn:Cu mixed source co-vaporize Zn with a small amount of Cu at temperatures where elemental Cu source does not vaporize. This method provides us a facile route for Cu doping into ZnO. The aspect ratio of the grown ZnO nanowires-II was found to be higher by more than five times compared ZnO nanowires-I. Photocatalytic activity was measured by using a solar simulator and its ultraviolet-filtered light. The ZnO nanowires-II shows higher catalytic activity due to increased aspect ratio and higher content of surface defects because of incorporation of Cu impurities.

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A comparison with the alkali halides suggests that all the ammonium halides should occur in the NaCl centre-of-mass structure. Experimentally, at room temperature and atmospheric pressure, only NH4I crystallizes in this structure, while NH4F is found in the ZnO structure, and NH4C1 and NH4Br occur in the CsCl structure. We show that a distributed charge on the NH4+ ion can explain these structures. Taking charges of + 0.2e on each of the five atoms in NH4+, as suggested by other studies, we have recomputed the Madelung energy in the cases of interest. A full ionic theory including electrostatic, van der Waals and repulsive interactions then explains the centre-of-mass structures of all the four ammonium halides. The thermal and pressure transitions are also explained reasonably well. The calculated phase diagram of NH4F compares well with experiment. Barring the poorly understood NH4F(II) phase, which is beyond the scope of this work, the other features are in qualitative agreement. In particular, the theory correctly predicts a pressure transition at room temperature from the ZnO structure directly to the CsCl structure without an intermediate NaCl phase. A feature of our approach is that we do not need to invoke hydrogen bonding in NH4F.

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Cu K-edge EXAFS spectra of Cu-Ni/Al2O3 and Cu-ZnO catalysts, both of which contain more than one Cu species, have been analysed making use of an additive relation for the EXAFS function. The analysis, which also makes use of residual spectra for identifying the species, shows good agreement between experimental and calculated spectra.

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A comparison with the alkali halides suggests that all the ammonium halides should occur in the NaCl centre-of-mass structure. Experimentally, at room temperature and atmospheric pressure, only NH,1 crystallizes in this structure, while NH,F is found in the ZnO structure, and NH&I and NH,Br occur in the CsCl structure. We show that a distributed charge on the NH,+ ion can explain these structures. Taking charges of + 0.2e on each of the five atoms in NH,+, as suggested by other studies, we have recomputed the Madelung energy in the cases of interest. A full ionic theory including electrostatic, van der Waals and repulsive interactions then explains the centre-of-mass structures of all the four ammonium halides. The thermal and pressure transitions are also explained reasonably well. The calculated phase diagram of NH,F compares well with experiment. Barring the poorly understood NH,F(II) phase, which is beyond the scope of this work, the other features are in qualitative agreement. In particular, the theory correctly predicts a pressure transition at room temperature from the ZnO structure directly to the CsCl structure without an intermediate NaCl phase. A feature of our approach is that we do not need to invoke hydrogen bonding in NH,F.

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Much progress in nanoscience and nanotechnology has been made in the past few years thanks to the increased availability of sophisticated physical methods to characterize nanomaterials. These techniques include electron microscopy and scanning probe microscopies, in addition to standard techniques such as X-ray and neutron diffraction, X-ray scattering, and various spectroscopies. Characterization of nanomaterials includes the determination not only of size and shape, but also of the atomic and electronic structures and other important properties. In this article we describe some of the important methods employed for characterization of nanostructures, describing a few case studies for illustrative purposes. These case studies include characterizations of Au, ReO3, and GaN nanocrystals; ZnO, Ni, and Co nanowires; inorganic and carbon nanotubes; and two-dimensional graphene.

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In view of the important need to generate well-dispersed inorganic nanostructures in various solvents, we have explored the dispersion of nanostructures of metal oxides such as TiO2, Fe3O4 and ZnO in solvents of differing polarity in the presence of several surfactants. The solvents used are water, dimethylformamide (DMF) and toluene. The surfactant-solvent combinations yielding the best dispersions are reported alongwith some of the characteristics of the nanostructures in the dispersions. The surfactants which dispersed TiO2 nanowires in water were polyethylene oxide (PEO), Triton X-100 (TX-100), polyvinyl alcohol (PVA) and sodium bis(2-ethylhexyl) sulphosuccinate (AOT). TiO2 nanoparticles could also be dispersed with AOT and PEO in water, and with AOT in toluene. In DMF, PVA, PEO and TX-100 were found to be effective, while in toluene, only AOT gave good dispersions. Fe3O4 nanoparticles were held for long periods of time in water by PEO, AOT, PVA and polyethylene glycol (PEG), and by AOT in toluene. In the case of ZnO nanowires, the best surfactant-solvent combinations were found to be, PEO, sodium dodecyl sulphate (SIDS) and AOT in water and AOT, PEG, PVA, PEO and TX-100 in DMF In toluene, stable dispersions of ZnO nanowires were obtained with PEO. We have also been able to disperse oxide nanostructures in non-polar solvents by employing a hydrophobic silane coating on the surface.