363 resultados para Rapid evolution


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A fast, efficient and novel method of preparation of hydroxyapatite using microwaves has been described.

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For a one-locus selection model, Svirezhev introduced an integral variational principle by defining a Lagrangian which remained stationary on the trajectory followed by the population undergoing selection. It is shown here (i) that this principle can be extended to multiple loci in some simple cases and (ii) that the Lagrangian is defined by a straightforward generalization of the one-locus case, but (iii) that in two-locus or more general models there is no straightforward extension of this principle if linkage and epistasis are present. The population trajectories can be constructed as trajectories of steepest ascent in a Riemannian metric space. A general method is formulated to find the metric tensor and the surface-in the metric space on which the trajectories, which characterize the variations in the gene structure of the population, lie. The local optimality principle holds good in such a space. In the special case when all possible linkage disequilibria are zero, the phase point of the n-locus genetic system moves on the surface of the product space of n higher dimensional unit spheres in a certain Riemannian metric space of gene frequencies so that the rate of change of mean fitness is maximum along the trajectory. In the two-locus case the corresponding surface is a hyper-torus.

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The decomposition of the beta phase in rapidly quenched Ti-2.8 at. pet Co, Ti-5.4 at. pet Ni, Ti-4.5 at. pet, and 5.5 at. pet Cu alloys has been investigated by electron microscopy. During rapid quenching, two competitive phase transformations, namely martensitic and eutectoid transformation, have occurred, and the region of eutectoid transformation is extended due to the high cooling rates involved. The beta phase decomposed into nonlamellar eutectoid product (bainite) having a globular morphology in Ti-2.8 pet Co and Ti-4.5 pet Cu (hypoeutectoid) alloys. In the near-eutectoid Ti-5.5 pet Cu alloy, the decomposition occurred by a lamellar (pearlite) type, whereas in Ti-5.4 pct Ni (hypereutectoid), both morphologies were observed. The interfaces between the proeutectoid alpha and the intermetallic compound in the nonlamellar type as well as between the proeutectoid alpha and the pearlite were often found to be partially coherent. These findings are in agreement with the Lee and Aaronson model proposed recently for the evolution of bainite and pearlite structures during the solid-state transformations of some titanium-eutectoid alloys. The evolution of the Ti2Cu phase during rapid quenching involved the formation of a metastable phase closely related to an ''omega-type'' phase before the equilibrium phase formed. Further, the lamellar intermetallic compound Ti2Cu was found to evolve by a sympathetic nucleation process. Evidence is established for the sympathetic nucleation of the proeutectoid alpha crystals formed during rapid quenching.

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Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

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Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have been deposited on silicon and platinum coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 24 and leakage current density of 9 x 10(-8) A cm(-2). A rapid thermal annealing process at temperatures above 700 degrees C crystallized the films, increased the dielectric relative permittivity, and decreased the leakage current. The dielectric constant for a film rapidly annealed at 850 degrees C increased to 45 and its leakage current density lowered to 2 x 10(-8) A cm(-2). The dielectric measurements in the MIS configuration showed that Ta2O5 might be used as a dielectric material instead of SiO2 or Si3N4 for integrated devices. The current voltage characteristics observed at low and high fields suggested different conduction mechanisms.

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Allergens from the pollen of Parthenium hysterophorus (American feverfew), responsible for high incidence of allergic rhinitis, were found by immunoprint analysis to be localized on the surface of the pollen grains. The allergens were released very rapidly when extracted in vitro. The allergenic activity of the rapid (10 s) and slowly (20 h) released pollen proteins was comparable by in vivo skin test and ELISA inhibition assay. The isoelectric focusing patterns of the rapid and slowly released proteins, were also identical. SDS-PAGE and Western blot analysis revealed that all the major pollen allergens with molecular weight 14, 28, 31, 37 and 45 kDa were eluted within 10 s of extraction. Periodate-Schiff staining showed that the 28, 31 and 45 kDa components of the pollen extract are glycoproteins. The pollen allergens released after different periods of extraction lost 75% of IgE binding activity when subjected to in situ sodium m-periodate oxidation under controlled conditions, while 80% of the allergenic activity was still retained after extensive proteolysis. Our results support the clinical observation of a rapid onset of symptoms of allergic rhinitis in patients sensitive to Parthenium pollen, mediated predominantly by glycoproteins.

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Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p- to n- was observed in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.

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Deformation processing and microstructural development of an alpha(2)/O aluminide alloy Ti-25Al-15Nb (at.%) was studied in the temperature range of 950 to 1200 degrees C and strain rate range of 10(-3) to 100 s(-1). Regions of processing and instability were identified using dynamic materials model. Dynamic recrystallization (DRX) of alpha(2)/O phase and p phase were seen to occur in the region of 950 to 1050 degrees C/0.001 to 0.05 s(-1) and 1125 to 1175 degrees C/0.001 to 0.1 s(-1), respectively. Unstable flow was seen to occur in the region of 1050 to 1190 degrees C/10 to 100 s(-1). Thermal activation analysis showed that DRX of alpha(2)/O and beta was controlled by cross-slip.

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In this paper the effects of constant and cyclic power loads on the evolution of interfacial reaction layers in lead-free solder interconnections are presented. Firstly, the differences in the growth behavior of intermetallic compound (IMC) layers at the cathode and anode sides of the interconnections are rationalized. This is done by considering the changes in the intrinsic fluxes of elements owing to electromigration as well as taking into account the fact that the growth of Cu3Sn and Cu6Sn5 are coupled via interfacial reactions. In this way, better understanding of the effect of electron flux on the growth of each individual layer in the Cu-Sn system can be achieved. Secondly, it is shown that there is a distinct difference between steady-state current stressing (constant current, constant temperature) and power cycling with alternating on- and off-cycle periods (accompanied by a change of temperature). The reasons behind the observed differences are subsequently discussed. Finally, special care is taken to ensure that the current densities are chosen in such a way that there is no risk for even partial melting of the solder interconnections.

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Distribution of particle reinforcements in cast composites is determined by the morphology of the solidification front. Interestingly, during solidification, the morphology of the interface is intrinsically affected by the presence of dispersed reinforcements. Thus the dispersoid distribution and length scale of matrix microstructure is a result of the interplay between these two. A proper combination of material and process parameters can be used to obtain composites with tailored microstructures. This requires the generation of a broad data base and optimization of the complete solidification process. The length scale of soldification microtructure has a large influence on the mechanical properties of the composites. This presentation addresses the concept of a particle distribution map which can help in predicting particle distribution under different solidification conditions Future research directions have also been indicated.

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Devitrification of spray pyrolysed, amorphous ZrO2-Al2O3 solid solution produces nanocrystalline microstructures (grain sizes 10-20 nm). In this study, spray pyrolysed amorphous ZrO2-40 mol% Al2O3 powder displayed good sinterability during decomposition, after spraying, of the nitrate precursors up to 1023K. Hot pressing of fully pyrolysed, pre-sintered (more than 70% dense) pellets at 923K and 750 MPa produced an amorphous pellet with less than 2% porosity. The results indicate the possibility of producing dense, amorphous pellets that can be heat treated further to produce nanocrystalline microstructures conducive for superplasticity.

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A detailed study of the layered manganite La1+xSr2-xMn2O7 has been performed, establishing that within the composition range 0.1 less than or equal to x less than or equal to 0.45 the phases crystallize in the I4/mmm space group. The evolution of structural parameters with x: in this composition range has been followed using a novel application of an existing program for the Rietveld analysis of powder diffraction data. The structure, a familiar intergrowth of rock-salt (La,Sr)O slabs and double perovskite (La,Sr)(2)Mn2O6 units, is characterized by a reluctance to deform the latter. This manifests as a ''pumping'' of the larger Sr-II ion into the 12-coordinate site of the structure as x is increased. We report these features of the structure as well as electrical transport and magnetic properties, in light of recent observations of giant, negative magnetoresistance in these systems.

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Granular alloys of Cu with FeCo were prepared by the melt-spinning technique. The alloy was characterized by x-ray, transmission electron microscopy, vibrating sample magnetometer, and magnetoresistance measurements. The alloys were heat treated for different temperatures to optimize the magnetoresistance properties. Structural characterization reveals that the FeCo phase initially precipitates out as fcc and later transforms to the bcc structure by martensitic transformation. It is seen that the trend in the magnetoresistance properties is different for the measurements carried out at room temperature and 4.2 K. This has been attributed to the transformation of fine fcc precipitates to the bcc structure during the low temperature measurements. It is seen that the presence of fine particles causes an increase in the field for saturation and is not suitable for applications where moderate field giant magnetoresistance is required. (C) 1999 American Institute of Physics. [S0021-8979(99)08317-6].