Quantum Random Walks without Coin Toss

We construct a quantum random walk algorithm, based on the Dirac operator instead of the Laplacian. The algorithm explores multiple evolutionary branches by superposition of states, and does not require the coin toss instruction of classical randomised algorithms. We use this algorithm to search for a marked vertex on a hypercubic lattice in arbitrary dimensions. Our numerical and analytical results match the scaling behaviour of earlier algorithms that use a coin toss instruction.

Quantum Algorithms with Fixed Points: The Case of Database Search

The standard quantum search algorithm lacks a feature, enjoyed by many classical algorithms, of having a fixed-point, i.e. a monotonic convergence towards the solution. Here we present two variations of the quantum search algorithm, which get around this limitation. The first replaces selective inversions in the algorithm by selective phase shifts of $\frac{\pi}{3}$. The second controls the selective inversion operations using two ancilla qubits, and irreversible measurement operations on the ancilla qubits drive the starting state towards the target state. Using $q$ oracle queries, these variations reduce the probability of finding a non-target state from $\epsilon$ to $\epsilon^{2q+1}$, which is asymptotically optimal. Similar ideas can lead to robust quantum algorithms, and provide conceptually new schemes for error correction.

Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651762]

Design of compact low pass filter with wide stop band using tri-section stepped impedance resonator

This paper reports the design of a compact low pass filter (LPF) with wide stop band region using trisection stepped impedance resonators in microstrip medium. Experimental results of a low pass filter designed at 1 GHz have been compared against the analytical and EM simulation results for the validation of the design. Results are satisfactorily matching each other. The maximum insertion of the measured filter is 0.2 dB and minimum return loss is 13.5 dB over the pass band. The stop band rejection is better than 20 dB from 1.5 GHz to 4.2 GHz and hence wide stop band performance is achieved. Overall size of the filter is 30 mm x 20 mm x 0.78 mm which is 0.1 lambda x 0.066 lambda. x 0.0026 lambda at 1 GHz. (C) 2011 Elsevier GmbH. All rights reserved.

A simple numerical method for three-dimensional analysis of simple expansion chamber mufflers of rectangular as well as circular cross-section with a stationary medium

Three-dimensional effects are a primary source of discrepancy between the measured values of automotive muffler performance and those predicted by the plane wave theory at higher frequencies. The basically exact method of (truncated) eigenfunction expansions for simple expansion chambers involves very complicated algebra, and the numerical finite element method requires large computation time and core storage. A simple numerical method is presented in this paper. It makes use of compatibility conditions for acoustic pressure and particle velocity at a number of equally spaced points in the planes of the junctions (or area discontinuities) to generate the required number of algebraic equations for evaluation of the relative amplitudes of the various modes (eigenfunctions), the total number of which is proportional to the area ratio. The method is demonstrated for evaluation of the four-pole parameters of rigid-walled, simple expansion chambers of rectangular as well as circular cross-section for the case of a stationary medium. Computed values of transmission loss are compared with those computed by means of the plane wave theory, in order to highlight the onset (cutting-on) of various higher order modes and the effect thereof on transmission loss of the muffler. These are also compared with predictions of the finite element methods (FEM) and the exact methods involving eigenfunction expansions, in order to demonstrate the accuracy of the simple method presented here.

The fluorescence of Nd3+ in lead borate and bismuth borate glasses with large stimulated emission cross section

The stimulated emission cross section σp for the 1060 nm transition of Nd3+ in lead borate and bismuth borate glasses has been determined from fluorescence measurements. The compositional dependence of σp, which has been evaluated using radiative transition probability, refractive index of the host glass, effective fluorescence linewidth, and position of the band, with PbO/Bi2O3 content is investigated. The σp values of the 1060 nm band of Nd3+ for lead borate and bismuth borate glasses are found to be in the range 2.6–5.7×10−20 cm2 at 298 K and 3.0–6.3×10−20 cm2 at 4.2 K. The σp values are comparatively large suggesting the possible utilization of these materials in laser applications.

A deep‐level spectroscopic technique for determining capture cross‐section activation energy of Si‐related DX centers in AlxGa1-xAs

A deep‐level transient spectroscopy (DLTS) technique is reported for determining the capture cross‐section activation energy directly. Conventionally, the capture activation energy is obtained from the temperature dependence of the capture cross section. Capture cross‐section measurement is often very doubtful due to many intrinsic errors and is more critical for nonexponential capture kinetics. The essence of this technique is to use an emission pulse to allow the defects to emit electrons and the transient signal from capture process due to a large capture barrier was analyzed, in contrast with the emission signal in conventional DLTS. This technique has been applied for determining the capture barrier for silicon‐related DX centers in AlxGa1−xAs for different AlAs mole fractions.

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

Microscopic study of the 2/5 fractional quantum Hall edge

This paper reports on our study of the edge of the 2/5 fractional quantum Hall state, which is more complicated than the edge of the 1/3 state because of the presence of edge sectors corresponding to different partitions of composite fermions in the lowest two Lambda levels. The addition of an electron at the edge is a nonperturbative process and it is not a priori obvious in what manner the added electron distributes itself over these sectors. We show, from a microscopic calculation, that when an electron is added at the edge of the ground state in the [N(1), N(2)] sector, where N(1) and N(2) are the numbers of composite fermions in the lowest two Lambda levels, the resulting state lies in either [N(1) + 1, N(2)] or [N(1), N(2) + 1] sectors; adding an electron at the edge is thus equivalent to adding a composite fermion at the edge. The coupling to other sectors of the form [N(1) + 1 + k, N(2) - k], k integer, is negligible in the asymptotically low-energy limit. This study also allows a detailed comparison with the two-boson model of the 2/5 edge. We compute the spectral weights and find that while the individual spectral weights are complicated and nonuniversal, their sum is consistent with an effective two-boson description of the 2/5 edge.

Time-dependent transitions with time-space noncommutativity and its implications in quantum optics

We study the time-dependent transitions of a quantum-forced harmonic oscillator in noncommutative R(1,1) perturbatively to linear order in the noncommutativity theta. We show that the Poisson distribution gets modified, and that the vacuum state evolves into a `squeezed' state rather than a coherent state. The time evolutions of uncertainties in position and momentum in vacuum are also studied and imply interesting consequences for modeling nonlinear phenomena in quantum optics.

Simple theoretical analysis of the Fowler-Nordheim field emission from microstructures and quantum wires of optoelectronic materials

We present a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of k.p formalism taking InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x) As(y)P(1-y) lattice matched to InP as examples. The FNFE exhibits oscillations with inverse quantizing magnetic field and electron concentration due to SdH effect and increases with increasing electric field. For quantum wires the FNFE increases with increasing film thickness due to the existence van-Hove singularity and the magnitude of the quantum jumps are not of same height indicating the signature of the band structure of the material concerned. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the field current varies in various manners with all the variables in all the limiting cases as evident from all the curves, the rates of variations are totally band-structure dependent. Under certain limiting conditions, all the results as derived in this paper get transformed in to well known Fowler-Nordheim formula. (C) 2011 Elsevier Ltd. All rights reserved.

Experimental implementation of quantumUlam’s problem in a nuclear magnetic resonance quantum information processor

The Ulam’s problem is a two person game in which one of the player tries to search, in minimum queries, a number thought by the other player. Classically the problem scales polynomially with the size of the number. The quantum version of the Ulam’s problem has a query complexity that is independent of the dimension of the search space. The experimental implementation of the quantum Ulam’s problem in a Nuclear Magnetic Resonance Information Processor with 3 quantum bits is reported here.