Temperature characteristics of the billet and the dies in a small batch forging production

The work reported herein is part of an on-going programme to develop a computer code which, given the geometrical, process and material parameters of the forging operation, is able to predict the die and the billet cooling/heating characteristics in forging production. The code has been experimentally validated earlier for a single forging cycle and is now validated for a small batch production. To facilitate a step-by-step development of the code, the billet deformation has so far been limited to its surface layers, a situation akin to coining. The code has been used here to study the effects of die preheat-temperature, machine speed and rate of deformation the cooling/heating of the billet and the dies over a small batch of 150 forgings. The study shows: that there is a pre-heat temperature at which the billet temperature changes little from one forging to the next; that beyond a particular number of forgings, the machine speed ceases to have any pronounced influence on the temperature characteristics of the billet; and that increasing the rate of deformation reduces the heat loss from the billet and gives the billet a stable temperature profile with respect to the number of forgings. The code, which is simple to use, is being extended to bulk-deformation problems. Given a practical range of possible machine, billet and process specifics, the code should be able to arrive at a combination of these parameters which will give the best thermal characteristics of the die-billet system. The code is also envisaged as being useful in the design of isothermal dies and processes.

Characteristics of a typical lifting symmetric supercritical airfoil

The theoretical aerodynamic characteristics of a typical lifting symmetric supercritical airfoil demonstrating its superiority over thenaca 0012 airfoil from which it was derived are presented in this paper. Further, limited experimental results confirming the theoretical inference are also presented.

Effect of pressure on the electrical resistivity of indium sulphide

Indium sulphide (INS) is a III-VI compound semiconductor and crystallizes in the orthorhombic structure with a space group D~(Pmnn). The lattice parameters at room temperature and atmospheric pressure are: a = 3.944 A, b = 4.447 A and c= 10.648#, [1, 2]. The crystal structure comprises an ethane-like SalnlnS3 atomic arrangement;the SalnInS3 groups are mutually linked by sharing S corners and form a three-dimensional network.

Coplanar gas-discharge display

1. The electric field strength between coplanar electrodes is calculated employing "conformal transformations." The electron multiplication factor is then computed in the nonuniform field region. These calculations have been made for different gap lengths, voltages, and also for different gases and gas pressures. The configuration results in a curved discharge path. It is found that the electron multiplication is maximum along a particular flux line and the prebreakdown discharge is expected to follow this flux line. Experimental tubes incorporating several coplanar gaps have been fabricated. Breakdown voltages have been measured for various discharge gaps and also for various gases such as xenon, helium, neon, argon, and neon-argon mixture (99.5:0.5) at different filling pressures. The variation of breakdown voltage with pressure and gap length is discussed. The observed discharge paths are curved and this is in agreement with theoretical results. A few experimental single-digit coplanar gas-discharge displays (CGDD's) with digit height of 5 cm have been fabricated and dependence of their characteristics on various parameters, including spacing between top glass plate and bottom substrate, have been studied.

Cavitation erosion characteristics of poly(methyl methacrylate) in a rotating disk device

Experimental results pertaining to the initiation, dynamics and mechanism of cavitation erosion on poly(methyl methacrylate) specimens tested in a rotating disk device are described in detail. Erosion normally starts at the location nearest to the center of rotation (CR). As the exposure time to cavitation increases, additional erosion areas or sites appear away from the CR and secondary erosion (induced by eroded pits) spreads upstream and merges with the main pit. The microcracks increase in density towards the end of the incubation period and transform into macrocracks in most cases. A study of light optical photographs and scanning electron micrographs of the eroded area shows that material particles are removed from the network of cracks because of crack joining and pits indicate particle debris. Optical degradation (loss of transmittance) is observed to be greater on the back of the specimen than on the front.

Electrical, structural and magnetic properties of polyaniline/pTSA-TiO2 nanocomposites

Polyaniline (PANI)/para-toluene sulfonic acid (pTSA) and PANI/pTSA-TiO2 composites were prepared using chemical method and characterized by infrared spectroscopy (IR), powder X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrical conductivity and magnetic properties were also measured. In corroboration with XRD, the micrographs of SEM indicated the homogeneous dispersion of TiO nanoparticles in bulk PANI/pTSA matrix. Conductivity of the PANI/pTSA-TiO2 was higher than the PAN[/pTSA, and the maximum conductivity obtained was 9.48 (S/cm) at 5 wt% of TiO2. Using SQUID magnetometer, it was found that PANI/pTSA was either paramagnetic or weakly ferromagnetic from 300 K down to 5 K with H-C approximate to 30 Oe and M-r approximate to 0.015 emu/g. On the other hand,PANI/pTSA-TiO2 was diamagnetic from 300 K down to about 50 K and below which it was weakly ferromagnetic. Furthermore, a nearly temperature-independent magnetization was observed in both the cases down to 50 K and below which the magnetization increased rapidly (a Curie like susceptibility was observed). The Pauli susceptibility (chi(pauli)) was calculated to be about 4.8 X 10(-5) and 1.6 x 10(-5)emug(-1) Oe(-1) K for PANI/pTSA and PANI/pTSA-TiO2, respectively.

Pressure and temperature dependence of the electrical resistivity of bulk Al23 Te77 glass

Electrical resistivity of bulk amorphous Al23T77 samples has been studied as a function of pressure (up to 80 kbar) and temperature (down to 77 K). At atmospheric pressure the temperature dependence of resistivity obeys the relation = π0 exp(δE/RT) with two activation energies. In the temperature range 300 K T > 234 K the activation energy is 0.58 eV and for 234 >T 185 K the value is δE = 0.30 ev. The activation energy has been measured as a function of pressure. The electrical resistivity decreases exponentially with the increase of pressure and at 70 kbar pressure the electrical behaviour of the sample shows a metallic nature with a positive temperature coefficient. The high pressure phase of the sample is found to be a crystalline hexagonal phase.

A Unique Filter-Preserver Device for Digital Photonic Circuits

We discuss micro ring resonator based optical logic gates using Kerr-type nonlinearity. Resonant wavelength selectivity is one key factor in achieving the desired gate. Based on basic gates like AND gate, OR gate etc. We proceed to propose a 3-bit binary adder circuit.Due to the presence of more than a single wavelength, the system gets complicated as we increase the number of components in the circuit. Hence it has been observed that for efficient designing and functioning of digital circuits in optical domain, we need a device which can give single wavelength output, filtering out all other wavelengths and at the same time preserve the digital characteristics of the output. We propose such filter-preserver device based on micro ring resonator.

Characteristics of Alfven surface waves along moving cylindrical plasma columns

The dispersive and stability characteristics of Alfven surface waves (ASW) along the boundary of the moving cylindrical plasma column, surrounded by a stationary medium embedded in a parallel magnetic field is studied. The nature of the symmetric and asymmetric modes on the interface parameters is also discussed.

Electrical transport and crystallization studies of glassy semiconducting Si20Te80 alloy at high pressure

The effect of pressure on the electrical resistivity of bulk Si20Te80 glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si20Te80 glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si20Te80 glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double Tg effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed.

Nonlinear I-V characteristics of senmiconducting paints

The oxide-based high resistivity semiconducting Paints can be used on high voltage insulators for improved performance. They were found to exhibit nonlinear I-V characteristics which are reported here. The paints exhibited power law relationship and a sharp transition in merhanism of conduction at a critical voltage.

Electrical Transport Studies in as-se Glasses

The DC and AC conductivity studies of As---Se glasses over a wide range of compositions have been reported and discussed. The contribution to conductivity from transport among extended states has been delineated and the possible existence of a characteristic temperature is indicated. Two conductivity maxima have been observed as a function of composition in AC conductivities at lower temperatures.

Multipath Dissemination in Regular Mesh Topologies

Mesh topologies are important for large-scale peer-to-peer systems that use low-power transceivers. The Quality of Service (QoS) in such systems is known to decrease as the scale increases. We present a scalable approach for dissemination that exploits all the shortest paths between a pair of nodes and improves the QoS. Despite th presence of multiple shortest paths in a system, we show that these paths cannot be exploited by spreading the messages over the paths in a simple round-robin manner; nodes along one of these paths will always handle more messages than the nodes along the other paths. We characterize the set of shortest paths between a pair of nodes in regular mesh topologies and derive rules, using this characterization, to effectively spread the messages over all the available paths. These rules ensure that all the nodes that are at the same distance from the source handle roughly the same number of messages. By modeling the multihop propagation in the mesh topology as a multistage queuing network, we present simulation results from a variety of scenarios that include link failures and propagation irregularities to reflect real-world characteristics. Our method achieves improved QoS in all these scenarios.