264 resultados para Dielectric Antenna


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Combining experiments with first-principles calculations, we show that site-specific doping of Mn into SrTiO(3) has a decisive influence on the dielectric properties of these doped systems. We find that phonon contributions to the dielectric constant invariably decrease sharply on doping at any site. However, a sizable, random dipolar contribution only for Mn at the Sr site arises from a strong off-centric displacement of Mn in spite of Mn being in a non-d(0) state; this leads to a large dielectric constant at higher temperatures and gives rise to a relaxor ferroelectric behavior at lower temperatures. We also investigate magnetic properties in detail and critically reevaluate the possibility of a true multiglass state in such systems.

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Antenna selection allows multiple-antenna systems to achieve most of their promised diversity gain, while keeping the number of RF chains and, thus, cost/complexity low. In this paper we investigate antenna selection for fourth-generation OFDMA- based cellular communications systems, in particular, 3GPP LTE (long-term evolution) systems. We propose a training method for antenna selection that is especially suitable for OFDMA. By means of simulation, we evaluate the SNR-gain that can be achieved with our design. We find that the performance depends on the bandwidth assigned to each user, the scheduling method (round-robin or frequency-domain scheduling), and the Doppler spread. Furthermore, the signal-to-noise ratio of the training sequence plays a critical role. Typical SNR gains are around 2 dB, with larger values obtainable in certain circumstances.

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Distributed space time coding for wireless relay networks where the source, the destination and the relays have multiple antennas have been studied by Jing and Hassibi. In this set up, the transmit and the receive signals at different antennas of the same relay are processed and designed independently, even though the antennas are colocated. In this paper, a wireless relay network with single antenna at the source and the destination and two antennas at each of the R relays is considered. In the first phase of the two-phase transmission model, a T -length complex vector is transmitted from the source to all the relays. At each relay, the inphase and quadrature component vectors of the received complex vectors at the two antennas are interleaved before processing them. After processing, in the second phase, a T x 2R matrix codeword is transmitted to the destination. The collection of all such codewords is called Co-ordinate interleaved distributed space-time code (CIDSTC). Compared to the scheme proposed by Jing-Hassibi, for T ges AR, it is shown that while both the schemes give the same asymptotic diversity gain, the CIDSTC scheme gives additional asymptotic coding gain as well and that too at the cost of negligible increase in the processing complexity at the relays.

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Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.

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Large single crystal of triglycine sulphate (dimension 100 mm along monoclinic b-axis and 15 mm in diameter) was grown using the unidirectional solution growth technique. The X-ray diffraction studies confirmed the growth/long axis to be b-axis (polar axis). The dielectric studies were carried out at various temperatures to establish the phase transition temperature. The frequency response of the dielectric constant, dielectric loss and impedance of the crystal along the growth axis, was monitored. These are typically characterized by strong resonance peaks in the kHz region. The piezoelectric coefficients like stiffness constant (C), elastic coefficient (S), electromechanical coupling coefficient (k) and d (31) were calculated using the resonance-antiresonance method. Polarization (P)-Electric field (E) hysteresis loops were recorded at various temperatures to find the temperature-dependent spontaneous polarization of the grown crystal. The pyroelectric coefficients were determined from the pyroelectric current measurement by the Byer and Roundy method. The ferroelectric domain patterns were recorded on (010) plane using scanning electron microscopy and optical microscopy.

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Titanium dioxide (TiO(2)) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO(2) films has been analyzed by X-ray photoelectron spectroscopy. The TiO(2) films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO(2) into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO(2)/p-Si have been fabricated. The leakage current density of unbiased films was 1 x10(-6) A/cm(2) at a gate bias voltage of 1.5 V and it was decreased to 1.41 x 10(-7) A/cm(2) with the increase of substrate bias voltage to -150 V owing to the increase in thickness of interfacial layer of SiO(2). Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at -150 V. The capacitance at 1 MHz for unbiased films was 2.42 x 10(-10) F and it increased to 5.8 x 10(-10) F in the films formed at substrate bias voltage of -150 V. Dielectric constant of TiO(2) films were calculated from capacitance-voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at -150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to -150 V. (C) 2011 Elsevier B. V. All rights reserved.