Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of Delta E-t approximate to 0.3 eV and with a density of state distribution as D-t(Et-j) = D-t0 exp(-Delta E-t/kT) with D-t0 = 5.02 x 10(11) cm(-2) eV(-1). Such a model is useful for developing simulation tools for circuit design. (C) 2014 AIP Publishing LLC.

Synthesis of self-light-scattering wrinkle structured ZnO photoanode by sol-gel method for dye-sensitized solar cells

A special morphological zinc oxide (ZnO) photoanode for dye-sensitized solar cell was fabricated by simple sol-gel drop casting technique. This film shows a wrinkled structure resembling the roots of banyan tree, which acts as an effective self scattering layer for harvesting more visible light and offers an easy transport path for photo-injected electrons. These ZnO electrode of low thickness (similar to 5 mu m) gained an enhanced short-circuit current density of 6.15 mA/cm(2), open-circuit voltage of 0.67 V, fill factor of 0.47 and overall conversion efficiency of 1.97 % under 1 sun illumination. This shows a high conversion efficiency and a superior performance than that of ZnO nanoparticle-based photoanode (eta similar to 1.13 %) of high thickness (similar to 8 mu m).

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Development of SnS quantum dot solar cells by SILAR method

SnS quantum dot solar cell is fabricated by Successive Ionic Layer Adsorption and Reaction (SILAR) method. SnS layer is optimized by different SILAR cycles of deposition. The particle size increased with the increase in number of SILAR cycles. Cu2S coated FTO is used as counter electrode against the conventional Platinum electrode. On comparison with a cell having a counter electrodeelectrolyte combination of Platinum-Iodine, Cu2S-polysulfide combination is found to improve both the short circuit current and fill factor of the solar cell. A maximum efficiency of 0.54% is obtained with an open circuit voltage of 311 mV and short circuit current density of 4.86 mA/cm. (C) 2014 Elsevier Ltd. All rights reserved.

Domain size correlated magnetic properties and electrical impedance of size dependent nickel ferrite nanoparticles

We report here the investigations on the size dependent variation of magnetic properties of nickel ferrite nanoparticles. Nickel ferrite nanoparticles of different sizes (14 to 22 nm) were prepared by the sol-gel route at different annealing temperatures. They are characterized by TGA-DTA, XRD, SEM, TEM and Raman spectroscopy techniques for the confirmation of the temperature of phase formation, thermal stability, crystallinity, morphology and structural status of the nickel ferrite nanoparticles. The magnetization studies revealed that the saturation magnetization (M-s), retentivity (M-r) increase, while coercivity (H-c) and anisotropy (K-eff) decrease as the particle size increases. The observed value of M-s is found to be relatively higher for a particle size of 22 nm. In addition, we have estimated the magnetic domain size using magnetic data and correlated to the average particle size. The calculated magnetic domain size is closely matching with the particle size estimated from XRD. Impedance spectroscopy was employed to study the samples in an equivalent circuit to understand their transport phenomena. It shows that nickel ferrite nanoparticles exhibit a non-Debye behavior with increasing particle size due to the influence of increasing disorders, surface effects, grain size and grain boundaries, etc. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

A critical review of the definition of FRA resonance frequency of transformers as per IEEE Std C57.149-2012

The explanation of resonance given in IEEE Std C57.149-2012 to define resonance during frequency response analysis (FRA) measurements on transformers implicitly uses the conditions prevalent during resonance in a series R-L-C circuit. This dependence is evident from the two assertions made in the definition, viz., resulting in zero net reactive impedance, and, accompanied by a zero value appearing in the phase angle of the frequency response function. These two conditions are satisfied (at resonance) only in a series R-L-C circuit and certainly not in a transformer, as has been assumed in the Standard. This can be proved by considering a ladder-network model. Circuit analysis of this ladder network reveals the origin of this fallacy and proves that, at resonance, neither is the ladder network purely resistive and nor is the phase angle (between input voltage and input current) always zero. Also, during FRA measurements, it is often seen that phase angle does not traverse the conventional cyclic path from +90 degrees to -90 degrees (or vice versa) at all resonant frequencies. This peculiar feature can also be explained using pole-zero maps. Simple derivations, simulations and experimental results on an actual winding are presented. In summary, authors believe that this study dispels existing misconceptions about definition of FRA resonance and provides material for its correction in IEEE Std C57.149-2012. (C) 2014 Elsevier B.V. All rights reserved.

Water-responsive carbon nanotubes for selective detection of toxic gases

Ammonia plays an important role in our daily lives and hence its quantitative and qualitative sensing has become necessary. Bulk structure of carbon nanotubes (CNTs) has been employed to detect the gas concentration of 10 ppm. Hydrophobic CNTs were turned to hydrophilic via the application of a ramp electric field that allowed confinement of a controlled amount of water inside CNT microstructure. These samples were then also used to detect different gases. A comparative study has been performed for sensing three reducing gases, namely, ammonia, sulphur-di-oxide, and hydrogen sulphide to elaborate the selectivity of the sensor. A considerable structural bending in the bulk CNT was observed on evaporation of the confined water, which can be accounted to the zipping of individual nanotubes. However, the rate of the stress induced on these bulk microstructures increased on the exposure of ammonia due to the change in the surface tension of the confined solvent. A prototype of an alarm system has been developed to illustrate sensing concept, wherein the generated stress in the bulk CNT induces a reversible loss in electrical contact that changes the equivalent resistance of the electrical circuit upon exposure to the gas. (C) 2015 AIP Publishing LLC.

Series-connected substrate-integrated lead-carbon hybrid ultracapacitors with voltage-management circuit

Cell voltage for a fully charged-substrate-integrated lead-carbon hybrid ultracapacitor is about 2.3 V. Therefore, for applications requiring higher DC voltage, several of these ultracapacitors need to be connected in series. However, voltage distribution across each series-connected ultracapacitor tends to be uneven due to tolerance in capacitance and parasitic parallel-resistance values. Accordingly, voltage-management circuit is required to protect constituent ultracapacitors from exceeding their rated voltage. In this study, the design and characterization of the substrate-integrated lead-carbon hybrid ultracapacitor with co-located terminals is discussed. Voltage-management circuit for the ultracapacitor is presented, and its effectiveness is validated experimentally.

Analysis of absorption characteristics of stacked patch arrays on moderately lossy dielectric layers

It is demonstrated that a square patch array on a moderately lossy dielectric can be transformed into a near-perfect absorber by the addition of a metallic square loop layer between the patch array and the metal back. In this configuration, the condition of perfect absorption can be easily obtained by modifying loop dimensions. The absorption properties of this configuration are analyzed theoretically using an equivalent circuit model and full-wave electromagnetic simulations. Experimental investigations included a bistatic radar cross-section measurement, which ensured that there are no scattered fields in other directions. An array structure built on a commercially available FR4 substrate with copper metallization is used to experimentally validate these results.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Flexible implementation of power system corrective topology control

This paper proposes a novel decision making framework for optimal transmission switching satisfying the AC feasibility, stability and circuit breaker (CB) reliability requirements needed for practical implementation. The proposed framework can be employed as a corrective tool in day to day operation planning scenarios in response to potential contingencies. The switching options are determined using an efficient heuristic algorithm based on DC optimal power flow, and are presented in a multi-branch tree structure. Then, the AC feasibility and stability checks are conducted and the CB condition monitoring data are employed to perform a CB reliability and line availability assessment. Ultimately, the operator will be offered multiple AC feasible and stable switching options with associated benefits. The operator can use this information, other operating conditions not explicitly considered in the optimization, and his/her own experience to implement the best and most reliable switching action(s). The effectiveness of the proposed approach is validated on the IEEE-118 bus test system. (C) 2015 Elsevier B.V. All rights reserved.

DESIGN OF AN EXPERIMENTAL TEST FACILITY FOR SUPERCRITICAL CO2 BRAYTON CYCLE

A supercritical CO2 test facility is currently being developed at Indian Institute of Science, Bangalore, India to analyze the performance of a closed loop Brayton cycle for concentrated solar power (CSP) generation. The loop has been designed for an external heat input of 20 kW a pressure range of 75-135 bar, flow rate of 11 kg/min, and a maximum cycle temperature of 525 degrees C. The operation of the loop and the various parametric tests planned to be performed are discussed in this paper The paper addresses various aspects of the loop design with emphasis on design of various components such as regenerator and expansion device. The regenerator design is critical due to sharp property variations in CO2 occurring during the heat exchange process between the hot and cold streams. Two types of heat exchanger configurations 1) tube-in-tube (TITHE) and 2) printed circuit heat exchanger (PCHE) are analyzed and compared. A PCHE is found to be similar to 5 times compact compared to a TITHE for identical heat transfer and pressure drops. The expansion device is being custom designed to achieve the desired pressure drop for a range of operating temperatures. It is found that capillary of 5.5 mm inner diameter and similar to 2 meter length is sufficient to achieve a pressure drop from 130 to 75 bar at a maximum cycle temperature of 525 degrees C.

High Performance Modulation of High-Frequency AC Link Inverter

Inverters with high voltage conversion ratio are used in systems with sources such as batteries, photovoltaic (PV) modules or fuel cells. Transformers are often used in such inverters to provide the required voltage conversion ratio and isolation. In this paper, a compact high-frequency (HF) transformer interfaced AC link inverter with lossless snubber is discussed. A high performance synchronized modulation scheme is proposed for this inverter. This modulation addresses the issue of over-voltage spikes due to transformer leakage inductance and it is shown that the circuit can operate safely even when the turn-on delay, such as dead-time, is not used in the HF rectifier section. The problem of spurious turn-on in the HF inverter switches is also mitigated by the proposed modulation method. The circuit performance is validated experimentally with a $900W$ prototype inverter.

Ferromagnetism and the effect of free charge carriers on electric polarization in the double perovskite Y2NiMnO6

The double perovskite Y2NiMnO6 displays ferromagnetic transition at T-c approximate to 81 K. The ferromagnetic order at low temperature is confirmed by the saturation value of magnetization (Ms) and also validated by the refined ordered magnetic moment values extracted from neutron powder diffraction data at 10 K. This way, the dominant Mn4+ and Ni2+ cationic ordering is confirmed. The cation-ordered P2(1)/n nuclear structure is revealed by neutron powder diffraction studies at 300 and 10 K. Analysis of the frequency-dependent dielectric constant and equivalent circuit analysis of impedance data take into account the bulk contribution to the total dielectric constant. This reveals an anomaly which coincides with the ferromagnetic transition temperature (T-c). Pyrocurrent measurements register a current flow with onset near T-c and a peak at 57 K that shifts with temperature ramp rate. The extrinsic nature of the observed pyrocurrent is established by employing a special protocol measurement. It is realized that the origin is due to reorientation of electric dipoles created by the free charge carriers and not by spontaneous electric polarization at variance with recently reported magnetism-driven ferroelectricity in this material.

On the Equivalence of Acoustic Impedance and Squeeze Film Impedance in Micromechanical Resonators

In this work, we address the issue of modeling squeeze film damping in nontrivial geometries that are not amenable to analytical solutions. The design and analysis of microelectromechanical systems (MEMS) resonators, especially those that use platelike two-dimensional structures, require structural dynamic response over the entire range of frequencies of interest. This response calculation typically involves the analysis of squeeze film effects and acoustic radiation losses. The acoustic analysis of vibrating plates is a very well understood problem that is routinely carried out using the equivalent electrical circuits that employ lumped parameters (LP) for acoustic impedance. Here, we present a method to use the same circuit with the same elements to account for the squeeze film effects as well by establishing an equivalence between the parameters of the two domains through a rescaled equivalent relationship between the acoustic impedance and the squeeze film impedance. Our analysis is based on a simple observation that the squeeze film impedance rescaled by a factor of jx, where x is the frequency of oscillation, qualitatively mimics the acoustic impedance over a large frequency range. We present a method to curvefit the numerically simulated stiffness and damping coefficients which are obtained using finite element analysis (FEA) analysis. A significant advantage of the proposed method is that it is applicable to any trivial/nontrivial geometry. It requires very limited finite element method (FEM) runs within the frequency range of interest, hence reducing the computational cost, yet modeling the behavior in the entire range accurately. We demonstrate the method using one trivial and one nontrivial geometry.