Tectono-geomorphic and environmental set-up deduced during deposition of Mio-Pleistocene sediments in NW Himalaya, India

Detailed pedofacies characterization along-with lithofacies investigations of the Mio-Pleistocene Siwalik sediments exposed in the Ramnagar sub-basin have been studied so as to elucidate variability in time and space of fluvial processes and the role of intra- and extra-basinal controls on fluvial sedimentation during the evolution of the Himalayan foreland basin (HFB). Dominance of multiple, moderately to strongly developed palaeosol assemblages during deposition of Lower Siwalik (similar to 12-10.8 Ma) sediments suggest that the HFB was marked by Upland set-up of Thomas et al. (2002). Activity of intra-basinal faults on the uplands and deposition of terminal fans at different times caused the development of multiple soils. Further, detailed pedofacies along-with lithofacies studies indicate prevalence of stable tectonic conditions and development of meandering streams with broad floodplains. However, the Middle Siwalik (similar to 10.8-4.92 Ma) sub-group is marked by multistoried sandstones and minor mudstone and mainly weakly developed palaeosols, indicating deposition by large braided rivers in the form of megafans in a Lowland set-up of Thomas et al. (2002). Significant change in nature and size of rivers from the Lower to Middle Siwalik at similar to 10 Ma is found almost throughout of the basin from Kohat Plateau (Pakistan) to Nepal because the Himalayan orogeny witnessed its greatest tectonic upheaval at this time leading to attainment of great heights by the Himalaya, intensification of the monsoon, development of large rivers systems and a high rate of sedimentation, hereby a major change from the Upland set-up to the Lowland set-up over major parts of the HFB. An interesting geomorphic environmental set-up prevailed in the Ramnagar sub-basin during deposition of the studied Upper Siwalik (similar to 4.92 to <1.68 Ma) sediments as observed from the degree of pedogenesis and the type of palaeosols. In general, the Upper Siwalik sub-group in the Ramnagar sub-basin is subdivided from bottom to top into the Purmandal sandstone (4.92-4.49 Ma), Nagrota (4.49-1.68 Ma) and Boulder Conglomerate (<1.68 Ma) formations on the basis of sedimentological characters and change in dominant lithology. Presence of mudstone, a few thin gravel beds and dominant sandstone lithology with weakly to moderately developed palaeosols in the Purmandal sandstone Fm. indicates deposition by shallow braided fluvial streams. The deposition of mudstone dominant Nagrota Fm. with moderately to some well developed palaeosols and a zone of gleyed palaeosols with laminated mudstones and thin sandstones took place in an environment marked by numerous small lakes, water-logged regions and small streams in an environment just south of the Piedmont zone, perhaps similar to what is happening presently in the Upland region/the Upper Gangetic plain. This area is locally called the `Trai region' (Pascoe, 1964). Deposition of Boulder Conglomerate Fm. took place by gravelly braided river system close to the Himalayan Ranges. Activity along the Main Boundary Fault led to progradation of these environments distal-ward and led to development of on the whole a coarsening upward sequence. (C) 2014 Elsevier B.V. All rights reserved.

Origin of 1/f noise in graphene produced for large-scale applications in electronics

The authors report a detailed investigation of the flicker noise (1/f noise) in graphene films obtained from chemical vapour deposition (CVD) and chemical reduction of graphene oxide. The authors find that in the case of polycrystalline graphene films grown by CVD, the grain boundaries and other structural defects are the dominant source of noise by acting as charged trap centres resulting in huge increase in noise as compared with that of exfoliated graphene. A study of the kinetics of defects in hydrazine-reduced graphene oxide (RGO) films as a function of the extent of reduction showed that for longer hydrazine treatment time strong localised crystal defects are introduced in RGO, whereas the RGO with shorter hydrazine treatment showed the presence of large number of mobile defects leading to higher noise amplitude.

Photochemical Deposition of Co-Ac Catalyst on ZnO Nanorods for Solar Water Oxidation

The preparation of ZnO nanorod films decorated with cobalt-acetate (CoAc) electrocatalyst and its activity for photoelectrolysis of water have been demonstrated. The photochemically prepared CoAc catalyst is chemically and morphologically similar to the electrochemically prepared CoAc catalyst. The on-set potential of oxygen evolution reaction is lower on CoAc-ZnO photoanode in relation to bare ZnO photoanode. There is a three to four fold increase in photooxidation current of OER due to the presence of CoAc co-catalyst on ZnO. Thus, the photochemically prepared CoAc on ZnO is an alternative and efficient co-catalyst for photoelectrochemical oxygen evolution reaction. The enhancement in photocatalytic activity of ZnO by the CoAc catalyst photochemically deposited from acetate buffer solution is significantly greater than the cobalt-phosphate (CoPi) co-catalyst deposited from phosphate buffer solution. (C) The Author(s) 2015. Published by ECS. All rights reserved.

Continuous vapour adsorption cooling system with three adsorber beds

In this paper, the design of a new solar operated adsorption cooling system with two identical small and one large adsorber beds, which is capable of producing cold continuously, has been proposed. In this system, cold energy is stored in the form of refrigerant in a separate refrigerant storage tank at ambient temperature. Silica gel water is used as a working pair and system is driven by solar energy. The operating principle is described in details and its thermodynamic transient analysis is presented. Effect of COP and SCE for different adsorbent mass and adsorption/desorption time of smaller beds are discussed. Recommended mass and number of cycles of operation for smaller beds to attain continuous cooling with average COP and SCE of 0.63 and 337.5 kJ/kg, respectively are also discussed, at a generation, condenser and evaporator temperatures of 368 K, 303 K and 283 K, respectively. (C) 2015 Elsevier Ltd. All rights reserved.

Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low(Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al2O3/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al2O3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al2O3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al2O3/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current-voltage characteristics displayed by these devices. (C) 2015 Elsevier B.V. All rights reserved.

Atmospheric pressure plasma chemical vapor deposition reactor for 100 mm wafers, optimized for minimum contamination at low gas flow rates

Gas discharge plasmas used for thinfilm deposition by plasma-enhanced chemical vapor deposition (PECVD) must be devoid of contaminants, like dust or active species which disturb the intended chemical reaction. In atmospheric pressure plasma systems employing an inert gas, the main source of such contamination is the residual air inside the system. To enable the construction of an atmospheric pressure plasma (APP) system with minimal contamination, we have carried out fluid dynamic simulation of the APP chamber into which an inert gas is injected at different mass flow rates. On the basis of the simulation results, we have designed and built a simple, scaled APP system, which is capable of holding a 100 mm substrate wafer, so that the presence of air (contamination) in the APP chamber is minimized with as low a flow rate of argon as possible. This is examined systematically by examining optical emission from the plasma as a function of inert gas flow rate. It is found that optical emission from the plasma shows the presence of atmospheric air, if the inlet argon flow rate is lowered below 300 sccm. That there is minimal contamination of the APP reactor built here, was verified by conducting an atmospheric pressure PECVD process under acetylene flow, combined with argon flow at 100 sccm and 500 sccm. The deposition of a polymer coating is confirmed by infrared spectroscopy. X-ray photoelectron spectroscopy shows that the polymer coating contains only 5% of oxygen, which is comparable to the oxygen content in polymer deposits obtained in low-pressure PECVD systems. (C) 2015 AIP Publishing LLC.

Influence of deposition time on the properties of electrodeposited Cu(In,Al)Se-2 thin films

Cu(In,Al)Se-2 films are grown using single step electrodeposition technique. The film properties are studied by varying the deposition time from 500 to 2000 s. Peaks corresponding to elemental Se and Cu2Se phase started appearing from 1200 s of deposition. The composition is changed significantly after 1500 S. Se concentration increased from 57 to 68% with the increase in the deposition time. The Cu2Se phase is dominant in the films deposited for a duration of 2000 s and the grain size increased from 1.12 to 2.15 mu m in this film. Raman analysis confirmed the presence of Se and Cu2Se phase in C1200. In C1500 and C2000 the spectra showed prominent mode corresponding to Cu2Se. The thickness of the film increased from 0.85 to 2.3 mu m with the increase in the deposition time. All the films showed p-type conductivity and resistivity reduced with increased thickness. (C) 2015 Elsevier Ltd. All rights reserved.

Role of thermal annealing on SiGe thin films fabricated by PECVD

Amorphous Silicon Germanium (a-SiGe) thin films of 500 nm thickness are deposited on silicon substrates using Plasma Enhanced Chemical Vapour Deposition (PECVD). To obtain polycrystalline nature of films, thermal annealing is done at various temperature (450-600 degrees C) and time (1-10 h). The surface morphology of the pre- and post-annealed films is investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The crystallographic structure of the film is obtained by X-ray diffraction method. Raman spectroscopy is carried out to quantify the Ge concentration and the degree of strain relaxation in the film. Nano-indentation is performed to obtain the mechanical properties of the film. It is found that annealing reduces the surface roughness of the film and increases the Ge concentration in the film. The grain size of the film increases with increase in annealing temperature. The grain size is found to decrease with increase in annealing time up to 5 h and then increased. The results show that 550 degrees C for 5 h is the critical annealing condition for variation of structural and mechanical properties of the film. Recrystallization starts at this condition and results in finer grains. An increase in hardness value of 7-8 GPa has been observed. Grain growth occurs above this critical annealing condition and degrades the mechanical properties of the film. The strain in the film is only relaxed to about 55% even for 10 h of annealing at 600 degrees C. Transmission Electron Microscopy (TEM) observations show that the strain relaxation occurs by forming misfit dislocations and these dislocations are confined to the SiGe/Si interface. (C) 2015 Elsevier Ltd. All rights reserved.

Correlation equations for average deposition rate coefficients of nanoparticles in a cylindrical pore

Nanoparticle deposition behavior observed at the Darcy scale represents an average of the processes occurring at the pore scale. Hence, the effect of various pore-scale parameters on nanoparticle deposition can be understood by studying nanoparticle transport at pore scale and upscaling the results to the Darcy scale. In this work, correlation equations for the deposition rate coefficients of nanoparticles in a cylindrical pore are developed as a function of nine pore-scale parameters: the pore radius, nanoparticle radius, mean flow velocity, solution ionic strength, viscosity, temperature, solution dielectric constant, and nanoparticle and collector surface potentials. Based on dominant processes, the pore space is divided into three different regions, namely, bulk, diffusion, and potential regions. Advection-diffusion equations for nanoparticle transport are prescribed for the bulk and diffusion regions, while the interaction between the diffusion and potential regions is included as a boundary condition. This interaction is modeled as a first-order reversible kinetic adsorption. The expressions for the mass transfer rate coefficients between the diffusion and the potential regions are derived in terms of the interaction energy profile. Among other effects, we account for nanoparticle-collector interaction forces on nanoparticle deposition. The resulting equations are solved numerically for a range of values of pore-scale parameters. The nanoparticle concentration profile obtained for the cylindrical pore is averaged over a moving averaging volume within the pore in order to get the 1-D concentration field. The latter is fitted to the 1-D advection-dispersion equation with an equilibrium or kinetic adsorption model to determine the values of the average deposition rate coefficients. In this study, pore-scale simulations are performed for three values of Peclet number, Pe = 0.05, 5, and 50. We find that under unfavorable conditions, the nanoparticle deposition at pore scale is best described by an equilibrium model at low Peclet numbers (Pe = 0.05) and by a kinetic model at high Peclet numbers (Pe = 50). But, at an intermediate Pe (e.g., near Pe = 5), both equilibrium and kinetic models fit the 1-D concentration field. Correlation equations for the pore-averaged nanoparticle deposition rate coefficients under unfavorable conditions are derived by performing a multiple-linear regression analysis between the estimated deposition rate coefficients for a single pore and various pore-scale parameters. The correlation equations, which follow a power law relation with nine pore-scale parameters, are found to be consistent with the column-scale and pore-scale experimental results, and qualitatively agree with the colloid filtration theory. These equations can be incorporated into pore network models to study the effect of pore-scale parameters on nanoparticle deposition at larger length scales such as Darcy scale.

Scaling analysis and numerical studies on water vapour adsorption in a columnar porous silica gel bed

This article presents a theoretical analysis of heat and mass transfer in a silica gel + water adsorption process using scaling principles. A two-dimensional columnar packed adsorber domain is chosen for the study, with side and bottom walls cooled and vapour inlet from the top. The adsorption process is initiated from the cold walls with a temperature jump of 15 K, whereas the water vapour supply is maintained at a constant inlet pressure of 1 kPa. The first part of the study is dedicated to deriving relevant scales for the adsorption process by an order of magnitude analysis of energy, continuity and momentum equations. In the latter part, the derived scales are compared with the outcome of numerical studies performed for various domain widths and aspect ratio of bed. A good correlation between scaling and simulation results is observed, thereby validating the scaling approach. (C) 2015 Elsevier Ltd. All rights reserved.

Biomass to liquid transportation fuel via Fischer Tropsch synthesis - Technology review and current scenario

Current global energy scenario and the environmental deterioration aspect motivates substituting fossil fuel with a renewable energy resource - especially transport fuel. This paper reviews the current status of trending biomass to liquid (BTL) conversion processes and focuses on the technological developments in Fischer Tropsch (FT) process. FT catalysts in use, and recent understanding of FT kinetics are explored. Liquid fuels produced via FT process from biomass derived syngas promises an attractive, clean, carbon neutral and sustainable energy source for the transportation sector. Performance of the FT process with various catalysts, operating conditions and its influence on the FT products are also presented. Experience from large scale commercial installations of FT plants, primarily utilizing coal based gasifiers, are discussed. Though biomass gasification plants exist for power generation via gas engines with power output of about 2 MWe; there are only a few equivalent sized FT plants for biomass derived syngas. This paper discusses the recent developments in conversion of biomass to liquid (BTL) transportation fuels via FT reaction and worldwide attempts to commercialize this process. All the data presented and analysed here have been consolidated from research experiences at laboratory scale as well as from industrial systems. Economic aspects of BTL are reviewed and compared. (C) 2015 Elsevier Ltd. All rights reserved.

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

An efficient buffer layer scheme has been designed to address the issue of curvature management during metalorganic chemical vapour deposition growth of GaN on Si (111) substrate. This is necessary to prevent cracking of the grown layer during post-growth cooling down from growth temperature to room temperature and to achieve an allowable bow (<40 m) in the wafer for carrying out lithographic processes. To meet both these ends simultaneously, the stress evolution in the buffer layers was observed carefully. The reduction in precursor flow during the buffer layer growth provided better control over curvature evolution in the growing buffer layers. This has enabled the growth of a suitable high electron mobility transistor (HEMT) stack on 2'' Si (111) substrate of 300 m thickness with a bow as low as 11.4 m, having a two-dimensional electron gas (2DEG) of mobility, carrier concentration, and sheet resistance values 1510 cm(2)/V-s, 0.96 x 10(13)/cm(2), and 444 /, respectively. Another variation of similar technique resulted in a bow of 23.4 m with 2DEG mobility, carrier concentration, and sheet resistance values 1960 cm(2)/V-s, 0.98 x 10(13)/cm(2), and 325 /, respectively.

Electrochemical deposition of manganese oxide-phosphate-reduced graphene oxide composite and electrocatalysis of the oxygen evolution reaction

A composite of manganese oxide and reduced graphene oxide (rGO) is prepared in a single step electrochemical reduction process in a phosphate buffer solution for studying as an electrocatalyst for the oxygen evolution reaction (OER). The novel composite catalyst, namely, MnOx-Pi-rGO, is electrodeposited from a suspension of graphene oxide (GO) in a neutral phosphate buffer solution containing KMnO4. The manganese oxide incorporates phosphate ions and deposits on the rGO sheet, which in turn is formed on the substrate electrode by electrochemical reduction of GO in the suspension. The OER is studied with the MnOx-Pi-rGO catalyst in a neutral phosphate electrolyte by linear sweep voltammetry. The results indicate a positive influence of rGO in the catalyst. By varying the ratio of KMnO4 and GO in the deposition medium and performing linear sweep voltammetry for the OER, the optimum composition of the deposition medium is obtained as 20 mM KMnO4 + 6.5% GO in 0.1 M phosphate buffer solution of pH 7. Under identical conditions, the MnOx-Pi-rGO catalyst exhibits 6.2 mA cm(-2) OER current against 2.9 mA cm(-2) by MnOx-Pi catalyst at 2.05 V in neutral phosphate solution. The Tafel slopes measured for OER at MnOx-Pi and MnOx-Pi-rGO are similar in magnitude at about 0.180 V decade(-1). The high Tafel slopes are attributed to partial dissolution of the catalyst during oxygen evolution. The O-2 evolved at the catalyst is measured by the water displacement method and the positive role of rGO on catalytic activity of MnOx-Pi is demonstrated.