223 resultados para semiconductor strain gage


Relevância:

20.00% 20.00%

Publicador:

Resumo:

The effect of strain path change during rolling has been investigated for copper and nickel using X-ray diffraction and electron back scatter diffraction as well as crystal plasticity simulations. Four different strain paths namely: (i) unidirectional rolling; (ii) reverse rolling; (iii) two-step cross rolling and (iv) multi-step cross rolling were employed to decipher the effect of strain path change on the evolution of deformation texture and microstructure. The cross rolled samples showed weaker texture with a prominent Bs {1 1 0}< 1 1 2 > and P(B(ND)) {1 1 0}< 1 1 1 > component in contrast to the unidirectional and reverse rolled samples where strong S {1 2 3}< 6 3 4 > and Cu {1 1 2}< 1 1 1 > components were formed. This was more pronounced for copper samples compared to nickel. The cross rolled samples were characterized by lower anisotropy and Taylor factor as well as less variation in Lankford parameter. Viscoplastic self-consistent simulations indicated that slip activity on higher number of octahedral slip systems can explain the weaker texture as well as reduced anisotropy in the cross rolled samples. (C) 2011 Elsevier B.V. All rights reserved.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The term Structural Health Monitoring has gained wide acceptance in the recent pastas a means to monitor a structure and provide an early warning of an unsafe conditionusing real-time data. Utilization of structurally integrated, distributed sensors tomonitor the health of a structure through accurate interpretation of sensor signals andreal-time data processing can greatly reduce the inspection burden. The rapidimprovement of the Fiber Bragg Grating sensor technology for strain, vibration andacoustic emission measurements in recent times make them a feasible alternatives tothe traditional strain gauges transducers and conventional Piezoelectric sensors usedfor Non Destructive Evaluation (NDE) and Structural Health Monitoring (SHM).Optical fiber-based sensors offers advantages over conventional strain gauges, PVDFfilm and PZT devices in terms of size, ease of embedment, immunity fromelectromagnetic interference(EMI) and potential for multiplexing a number ofsensors. The objective of this paper is to demonstrate the feasibility of Fiber BraggGrating sensor and compare its utility with the conventional strain gauges and PVDFfilm sensors. For this purpose experiments are being carried out in the laboratory on acomposite wing of a mini air vehicle (MAV). In this paper, the results obtained fromthese preliminary experiments are discussed.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

A comparative study of strain response and mechanical properties of rammed earth prisms, has been made using Fiber Bragg Grating (FBG) sensors (optical) and clip-on extensometer (electro-mechanical). The aim of this study is to address the merits and demerits of traditional extensometer vis-à-vis FBG sensor; a uni-axial compression test has been performed on a rammed earth prism to validate its structural properties from the stress - strain curves obtained by two different methods of measurement. An array of FBG sensors on a single fiber with varying Bragg wavelengths (..B), has been used to spatially resolve the strains along the height of the specimen. It is interesting to note from the obtained stress-strain curves that the initial tangent modulus obtained using the FBG sensor is lower compared to that obtained using clip-on extensometer. The results also indicate that the strains measured by both FBG and extensometer sensor follow the same trend and both the sensors register the maximum strain value at the same time.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Insertion of just a few impurity atoms in a host semiconductor nanocrystal can drastically alter its phase, shape, and physical properties. Such doped nanomaterials now constitute an important class of optical materials that can provide efficient, stable, and tunable dopant emission in visible and NIR spectral windows. Selecting proper dopants and inserting them in appropriate hosts can generate many new series of such doped nanocrystals with several unique and attractive properties in order to meet current challenges in the versatile field of luminescent materials. However, the synthesis of such doped nanomaterials with a specific dopant in a predetermined host at a desired site leading to targeted optical properties requires fundamental understanding of both the doping process as well as the resulting photophysical properties. Summarizing up to date literature reports, in this Perspective we discuss important advances in synthesis methods and in-depth understanding of the optical properties, with an emphasis on the most widely investigated Mn-doped semiconductor nanocrystals.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Grey tracks produced in KTiOPO4 (KTP) by applying a dc electric field have been studied through optical absorption, Raman scattering, and synchrotron x‐ray topography. A study of the optical absorption and Raman scattering from the grey‐tracked region suggests that their formation is accompanied by changes in the electronic levels of Ti4+. There is no evidence for a major structural change or disorder in the grey‐tracked region. However, the x‐ray topographs do indicate the presence of a remnant strain in the lattice, which might contribute to the observed changes in the Raman intensities.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The effect of Mg doping in ZnO is investigated through structural, electrical, and optical properties. Zn1−xMgxO (0<×<0.3) thin films were deposited on Si (100) and corning glass substrates using multimagnetron sputtering. Investigations on the structural properties of the films revealed that the increase in Mg concentration resulted in phase evolution from hexagonal to cubic phase. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The Zn0.7Mg0.3O thin films exhibited a well-defined polarization hysteresis loop with a remnant polarization of 0.2 μC/cm2 and coercive field of 8 kV/cm at room temperature. An increase in the band gap with an increase in Mg content was observed in the range of 3.3–3.8 eV for x = 0–0.3. The average transmittance of the films was higher than 90% in the wavelength region λ = 400–900 nm.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Taking polycrystalline cadmium as an example and by utilizing the predicted temperature or strain rate-dependence of the (Hall-Petch) stress-grain size parameters, a reasonably quantitative explanation is given for the grain size dependence of apparent activation volume measurements. The explanation involves the theoretical relation of these measurements to single-crystal measurements.