Exact internal controllability for a hyperbolic problem in a domain with highly oscillating boundary

In this paper, by using the Hilbert Uniqueness Method (HUM), we study the exact controllability problem described by the wave equation in a three-dimensional horizontal domain bounded at the bottom by a smooth wall and at the top by a rough wall. The latter is assumed to consist in a plane wall covered with periodically distributed asperities whose size depends on a small parameter epsilon > 0, and with a fixed height. Our aim is to obtain the exact controllability for the homogenized equation. In the process, we study the asymptotic analysis of wave equation in two setups, namely solution by standard weak formulation and solution by transposition method.

Asymptotic expansions for the structural wavenumbers of isotropic and orthotropic fluid-filled circular cylindrical shells in the intermediate frequency range

We consider wavenumbers in in vacuo and fluid-filled isotropic and orthotropic shells. Using the Donnell-Mushtari (DM) theory we find compact and elegant asymptotic expansions for the wavenumbers in the intermediate frequency range, i.e., around the ring frequency. This frequency range corresponds to the frequencies where there is a rapid change in the values of bending wavenumbers and is found to exist in isotropic and orthotropic shells (in vacua and fluid-filled) for low circumferential orders n only. The same is first identified using the n=0 mode of an orthotropic shell. Following this, using the expression for the intermediate frequency, asymptotic expansions are found for other cases. Here, in order to get compact expansions we consider slight orthotropy (epsilon << 1) and light fluid loading (mu << 1). Thus, the orthotropy parameter epsilon and the fluid loading parameter mu are used as asymptotic parameters along with the non-dimensional thickness parameter beta. The methodology can be extended to any order of epsilon, only the expansions become unwieldy. The expansions are matched with the numerical solutions of the corresponding dispersion relation. The match is found to be good.

Segmental relaxations and crystallization-induced phase separation in PVDF/PMMA blends in the presence of surface-functionalized multiwall carbon nanotubes

Crystallization-induced phase separation and segmental relaxations in poly(vinylidene fluoride)/poly(methyl methacrylate) (PVDF/PMMA) blends was systematically investigated by melt-rheology and broadband dielectric spectroscopy in the presence of multiwall carbon nanotubes (MWNTs). Different functionalized MWNTs (amine, -NH2; acid, -COOH) were incorporated in the blends by melt-mixing above the melting temperature of PVDF, where the blends are miscible, and the crystallization induced phase separation was probed in situ by shear rheology. Interestingly, only -NH2 functionalized MWNTs (a-MWNTs) aided in the formation of beta-phase (trans-trans) crystals in PVDF, whereas both the neat blends and the blends with -COOH functionalized MWNTs (c-MWNTs) showed only alpha-phase (trans-gauche-trans-gauche') crystals as inferred from wide-angle X-ray diffraction (WXRD) and Fourier transform infrared (FTIR). Furthermore, blends with only a-MWNTs facilitated in heterogeneous nucleation in the blends manifesting in an increase in the calorimetric crystallization temperature and hence, augmented the theologically determined crystallintion induced phase separation temperature. The dielectric relaxations associated with the crystalline phase of PVDF (alpha(c)) was completely absent in the blends with a-MWNTs in contrast to neat blends and the blends with c-MWNTs in the dielectric loss spectra. The relaxations in the blends investigated here appeared to follow Havriliak-Negami (HN) empirical equations, and, more interestingly, the dynamic heterogeneity in the system could be mapped by an extra relaxation at higher frequency at the crystallization-induced phase separation temperature. The mean relaxation time (tau(HN)) was evaluated and observed to be delayed in the presence of MWNTs in the blends, more prominently in the case of blends with a-MWNTs. The latter also showed a significant increase in the dielectric relaxation strength (Delta epsilon). Electron microscopy and selective etching was used to confirm the localization of MWNTs in the amorphous phases of the interspherulitic regions as observed from scanning electron microscopy (SEM). The evolved crystalline morphology, during crystallization-induced phase separation, was observed to have a strong influence on the charge transport processes in the blends. These observations were further supported by the specific interactions (like dipole induced dipole interaction) between a-MWNTs and PVDF, as inferred from FTIR, and the differences in the crystalline morphology as observed from WXRD and polarized optical microscopy (POM).

Comparative study on optical properties of Se-Zn-In and Se-Zn-Te-In chalcogenide glasses

In contemporary world optoelectronics materials are used in daily life owing to its verity of applications. Utility of these materials makes them attractive for investigations. Specifically study regarding optical properties of recent developed materials is worth for technical uses. Therefore, this work demonstrates a comparative study of extinction coefficient (K), real dielectric (epsilon') and imaginary dielectric (epsilon `') constants, refractive index (n) and optical energy band gap (E-g) with structural unit < r > for Se98-xZn2Inx (0 <= X-In <= 10) and Se93-yZn2Te5Iny (0 <= Y-In <= 10) chalcogenide glasses. Fixed amount of Te with increasing In concentration as cost of Se is largely influence the optical parameters of the materials. Values of optical parameters are obtained higher and lower respectively at thresholds structural units values. This comparative study demonstrates that enhanced values of optical parameters have been obtained for Te containing Se-Zn-In glasses.

Simultaneous measurement of mechanical and electrical contact resistances during nanoindentation of NiTi shape memory alloys

The nanoindentation technique can be employed in shape memory alloys (SMAs) to discern the transformation temperatures as well as to characterize their mechanical behavior. In this paper, we use it with simultaneous measurements of the mechanical and the electrical contact resistances (ECR) at room temperature to probe two SMAs: austenite (RTA) and martensite (RTM). Two different types of indenter tips - Berkovich and spherical - are employed to examine the SMAs' indentation responses as a function of the representative strain, epsilon(R). In Berkovich indentation, because of the sharp nature of the tip, and in consequence the high levels of strain imposed, discerning the two SMAs on the basis of the indentation response alone is difficult. In the case of the spherical tip, epsilon(R) is systematically varied and its effect on the depth recovery ratio, eta(d), is examined. Results indicate that RTA has higher eta(d) than RTM, but the difference decreases with increasing epsilon(R) such that eta(d) values for both the alloys would be similar in the fully plastic regime. The experimental trends in eta(d) vs. epsilon(R) for both the alloys could be described well with a eta(d) proportional to (epsilon(R))(-1) type equation, which is developed on the basis of a phenomenological model. This fit, in turn, directs us to the maximum epsilon(R), below which plasticity underneath the indenter would not mask the differences in the two SMAs. It was demonstrated that the ECR measurements complement the mechanical measurements in demarcating the reverse transformation from martensite to austenite during unloading of RTA, wherein a marked increase in the voltage was noted. A correlation between recovery due to reverse transformation during unloading and increase in voltage (and hence the electrical resistance) was found. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Performance Analysis of Strained Monolayer MoS2 MOSFET

We present a computational study on the impact of tensile/compressive uniaxial (epsilon(xx)) and biaxial (epsilon(xx) = epsilon(yy)) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrodinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.

Strain-controlled fatigue in B-modified Ti-6Al-4V alloys

The strain-controlled fatigue behaviour of Ti-6Al-4V alloy with up to 0.11 wt.% B addition was investigated. Results show significant softening when the strain amplitudes, Delta epsilon(T)/2, are >= 0.75%. B addition was found to improve the fatigue life for Delta epsilon(T)/2 <= 0.75% as it corresponds to the elastic regime and hence is strength dominated. At Delta epsilon(T)/2 = 1%, in contrast, the base alloy exhibits higher fatigue life as TiB particle cracking due to strain incompatibility causes easy crack nucleation in the B-modified alloys. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

EXTENSIONS OF VECTOR BUNDLES WITH APPLICATION TO NOETHER-LEFSCHETZ THEOREMS

Given a smooth, projective variety Y over an algebraically closed field of characteristic zero, and a smooth, ample hyperplane section X subset of Y, we study the question of when a bundle E on X, extends to a bundle epsilon on a Zariski open set U subset of Y containing X. The main ingredients used are explicit descriptions of various obstruction classes in the deformation theory of bundles, together with Grothendieck-Lefschetz theory. As a consequence, we prove a Noether-Lefschetz theorem for higher rank bundles, which recovers and unifies the Noether-Lefschetz theorems of Joshi and Ravindra-Srinivas.

The effect of Sb on the electrical and magnetic properties of Ni-Zn ferrites prepared by sol-gel autocombustion method

Polycrystalline Ni-Zn ferrites with a well-defined composition of Ni0.4Zn0.6Fe2-xSbxO4 synthesized using sol-gel method. Morphological characterizations on the prepared samples were performed by high resolution transmission electron and field emission scanning electron microscopy. The powders were densified using microwave sintering method. The room temperature complex permittivity (epsilon' and epsilon aEuro(3)) and permeability (mu' and mu aEuro(3)) were measured over a wide frequency range from 1 MHz-1.8 GHz. The real part of permittivity varies as `x' concentration increases and the resonance frequency was observed at much higher frequencies and there is a significant decrease in the loss factor (tan delta). The electrical resistivity and permeability of NiZn ferrites increased with an increase of Sb content. As the concentration of `x' increases from 0 to 0.08 the saturation magnetisation decreases. The saturation magnetization (M-s) a parts per thousand aEuro parts per thousand 52.211 A.m(2)/Kg for x = 0 at room temperature. The room temperature electro paramagnetic resonance (EPR) were studied.

Effect of Gd3+ on dielectric and magnetic properties of Y3Fe5O12

The Gd3+ doped Y3-xGdxFe5O12 (x=0.0, 0.05, 0.15, and 0.25) nanopowders were prepared using modified sol-gel route. The structural characterizations such as X-ray diffraction, transmission electron microscopy has been carried out. The nanopowders were sintered at 700 degrees C/3 h. The lattice parameters and density of the samples were increased with an increase of Gd3+ concentration. The microstructure was analyzed using atomic force microscopy. The room temperature dielectric (epsilon' and epsilon `') and magnetic (mu' and mu `') properties were measured in the frequency range 5-50 GHz. with Gd3+ the dielectric properties were enhanced, but there is a decrease in the magnetic properties. The room temperature magnetization studies were carried out up to 1.5 T. the saturation and remnant magnetization were decreased with an increase of gadolinium concentration. These garnets have low permeability, low losses and a broad distribution of FMR line width which makes them a promising material for microwave devices can be used in the high frequency range i.e. up to 50 GHz. (C) 2013 Elsevier BM. All rights reserved.

Improved magneto-electric response in Na0.5Bi0.5TiO3-MnFe2O4 composites

Magneto-electric composites comprising Na0.5Bi0.5TiO3 (NBT) and MnFe2O4 (MFO) were fabricated using their fine powders obtained via sol-gel method. X-ray diffraction and scanning electron microscopy results confirmed the single-phase formation of NBT and MFO and the composite nature when these were mixed and sintered at appropriate temperatures. The dielectric constant (epsilon(r)) and dielectric loss (D) decreased with increase in frequency (40-110 MHz). Room temperature magnetization measurements established these composites to be soft magnetic. Further, the nature of these composites were established to be magneto-electric at 300 K. The highest ME response of 0.19 % was observed in 30NBT-70MFO composite. The ME coefficient (alpha) was 240 mV/cm Oe for the same composition. The present study demonstrated the effectiveness of NBT/MFO as a lead-free multiferroic composite and provides an alternative for environment-friendly ME device applications.

Monitoring of ultraviolet pulse rate dependent photomechanical actuation in carbon nanotubes using fiber Bragg gratings

In this Letter, we present a non-contact method of controlling and monitoring photomechanical actuation in carbon nanotubes (CNT) by exposing it to ultra-violet radiation at different pulse rates (10 to 200 Hz). This is accomplished by imparting a reversible photo induced strain (5-330 mu epsilon) on CNT coated fibre Bragg gratings; CNT undergoes an internal reversible structural change due to cyclic photon absorption that leads to the development of mechanical strain, which in turn allows reversible switching of the Bragg wavelength. The results also reveal an interesting pulse rate dependent rise and fall times of photomechanical actuation in CNT. (C) 2014 AIP Publishing LLC.

Nanostructured CexZn1-xO thin films: Influence of Ce doping on the structural, optical and electrical properties

Thin films of CexZn1-xO thin films were deposited on glass substrates at 400 degrees C by nebulizer spray pyrolysis technique. Ce doping concentration (x) was varied from 0 to 10%, in steps of 2.5%. X-ray diffraction reveals that all the films have polycrystalline nature with hexagonal crystal structure and high preferential orientation along (002) plane. Optical parameters such as; transmittance, band gap energy, refractive index (n), extinction coefficient (k), complex dielectric constants (epsilon(r), epsilon(i)) and optical conductivity (sigma(r), sigma(i)) have been determined and discussed with respect to Ce concentration. All the films exhibit transmittance above 80% in the wavelength range from 330 to 2500 nm. Optical transmission measurements indicate the decrease of direct band gap energy from 3.26 to 3.12 eV with the increase of Ce concentration. Photoluminescence spectra show strong near band edge emission centered similar to 398 nm and green emission centered similar to 528 nm with excitation wavelength similar to 350 nm. High resolution scanning electron micrographs indicate the formation of vertical nano-rod like structures on the film surface with average diameter similar to 41 nm. Electrical properties of the Ce doped ZnO film have been studied using ac impedance spectroscopy in the frequency range from 100 Hz-1 MHz at different temperatures. (C) 2013 Elsevier B.V. All rights reserved.

Glassy dielectric response in Tb2NiMnO6 double perovskite with similarities to a Griffiths phase

Results of frequency-dependent and temperature-dependent dielectric measurements performed on the double-perovskite Tb2NiMnO6 are presented. The real (epsilon(1)(f,T)) and imaginary (epsilon(2)(f,T)) parts of dielectric permittivity show three plateaus suggesting dielectric relaxation originating from the bulk, grain boundaries and the sample-electrode interfaces, respectively. The epsilon(1)(f,T) and epsilon(2)(f,T) are successfully simulated by a RC circuit model. The complex plane of impedance, Z'-Z `', is simulated using a series network with a resistor R and a constant phase element. Through the analysis of epsilon(f,T) using the modified Debye model, two different relaxation time regimes separated by a characteristic temperature, T*, are identified. The temperature variation of R and C corresponding to the bulk and the parameter alpha from modified Debye fit lend support to this hypothesis. Interestingly, the T* compares with the Griffiths temperature for this compound observed in magnetic measurements. Though these results cannot be interpreted as magnetoelectric coupling, the relationship between lattice and magnetism is markedly clear. We assume that the observed features have their origin in the polar nanoregions which originate from the inherent cationic defect structure of double perovskites. Copyright (C) EPLA, 2013

Synthesis and Characterization of CoFe2O4/Polyaniline Nanocomposites for Electromagnetic Interference Applications

The Cobalt ferrite (CoFe2O4) powders were synthesized by Co-precipitation method. The as prepared ferrite powders were incorporated into a polyaniline matrix at various volumetric ratios. The as prepared composites of ferrite and polyaniline powders were characterized using X-ray diffraction (XRD), transmission electron microscope (TEM). The particle size of CoFe2O4 is found to be 20 nm. The saturation magnetization (M-s) of all the composites was found to be decreasing with decrease of ferrite content, while coercivity (H-c) remained at the value corresponding to pure cobalt ferrite nanopowders. The complex permittivity (epsilon' and epsilon `') and permeability (mu' and mu `') of composite samples were measured in the range of 1 MHz to 1.1 GHz. The value of epsilon' and mu' found to be increased with ferrite volume concentration.