164 resultados para e-beam evaporation


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Fiber reinforced laminated composite open-section beams are widely used as bearingless rotor flex beams because of their high specific strength and stiffness as well as fatigue life. These laminated composite structures exhibit a number of different failure modes, including fiber-matrix debonding within individual layers, delamination or separation of the layers, transverse cracks through one or more layers and fiber fracture. Delamination is a predominant failure mode in continuous fiber reinforced laminated composites and often initiate near the free edges of the structure. The appearance of delaminations in the composite rotorcraft flexbeams can lead to deterioration of the mechanical properties and, in turn, the helicopter performance as well as safety. Understanding and predicting the influence of free-edge delamination on the overall behavior of the laminates will provide quantitative measures of the extent of the damage and help ensure their damage tolerance.

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ZnS nanostructures were grown on Si substrates in high vacuum by modified thermal evaporation technique. Morphology, chemical composition and structural properties of grown ZnS nanostructures were studied using scanning electron microscope (SEM), X-ray diffractometer and transmission electron microscope (TEM). SEM studies showed that morphology of the grown structures varies with incident flux and source temperature. TEM studies showed that grown nanostructures are single crystalline in nature without structural defects such as stacking faults and twins. No catalytic particle was included in this growth process, and hence these micro and nanostructures were assumed to grow by VS mechanism.

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We study the phenomenon of evaporation-driven self-assembly of a colloid suspension of silica microspheres in the interior region and away from the rim of the droplet on a glass plate. In view of the importance of achieving a large-area, monolayer assembly, we first realize a suitable choice of experimental conditions, minimizing the influence of many other competing phenomena that usually complicate the understanding of fundamental concepts of such self-assembly processes in the interior region of a drying droplet. Under these simplifying conditions to bring out essential aspects, our experiments unveil an interesting competition between ordering and compaction in such drying systems in analogy to an impending glass transition. We establish a re-entrant behavior in the order disorder phase diagram as a function of the particle density, such that there is an optimal range of the particle density to realize the long-range ordering. The results are explained with the help of simulations and phenomenological theory.

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Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires.

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Semiconducting Cu3BiS3 (CBS) thin films were deposited by co-evaporation of Cu, Bi elemental metallic precursors, with in situ sulphurisation, using a quartz effusion cell. Cu3BiS3 thin films were structurally characterized by XRD and FE-SEM. The chemical bonding of the ions was examined by XPS. As deposited films were demonstrated for metal-semiconductor-metal near IR photodectection under lamp and laser illuminations. The photo current amplified to three orders and two orders of magnitude upon the IR lamp and 60 m W cm(-2) 1064 nm IR laser illuminations, respectively. Larger grains, made up of nano needle bunches aided the transport of carriers. Transport properties were explained based on the trap assisted space charge conduction mechanism. Steady state detector parameters like responsivity varied from 1.04 AW(-1) at 60 m Wcm(-2) to 0.22 AW(-1) at 20 m Wcm(-2). Detector sensitivity of 295 was found to be promising and further could be tuned for better responsivity and efficiency in utilization of near infra-red photodetector. (C) 2014 AIP Publishing LLC.

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Patterning nanostructures on flexible substrates plays a key role in the emerging flexible electronics technology. The flexible electronic devices are inexpensive and can be conformed to any shape. The potential applications for such devices are sensors, displays, solar cells, RFID, high-density biochips, optoelectronics etc. E-beam lithography is established as a powerful tool for nanoscale fabrication, but its applicability on insulating flexible substrates is often limited because of surface charging effects. This paper presents the fabrication of nanostructures on insulating flexible substrates using low energy E-beam lithography along with metallic layers for charge dissipation. Nano Structures are patterned on different substrates of materials such as acetate and PET foils. The fabrication process parameters such as the proximity gap of exposure, the exposure dosage and developing conditions have been optimized for each substrate.

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Stability of a fracture toughness testing geometry is important to determine the crack trajectory and R-curve behavior of the specimen. Few configurations provide for inherent geometric stability, especially when the specimen being tested is brittle. We propose a new geometrical construction called the single edge notched clamped bend specimen (SENCB), a modified form of three point bending, yielding stable cracking under load control. It is shown to be particularly suitable for small-scale structures which cannot be made free-standing, (e.g., thin films, coatings). The SENCB is elastically clamped at the two ends to its parent material. A notch is inserted at the bottom center and loaded in bending, to fracture. Numerical simulations are carried out through extended finite element method to derive the geometrical factor f(a/W) and for different beam dimensions. Experimental corroborations of the FEM results are carried out on both micro-scale and macro-scale brittle specimens. A plot of vs a/W, is shown to rise initially and fall off, beyond a critical a/W ratio. The difference between conventional SENB and SENCB is highlighted in terms of and FEM simulated stress contours across the beam cross-section. The `s of bulk NiAl and Si determined experimentally are shown to match closely with literature values. Crack stability and R-curve effect is demonstrated in a PtNiAl bond coat sample and compared with predicted crack trajectories from the simulations. The stability of SENCB is shown for a critical range of a/W ratios, proving that it can be used to get controlled crack growth even in brittle samples under load control.

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The nature of the signal due to light beam induced current (LBIC) at the remote contacts is verified as a lateral photovoltage for non-uniformly illuminated planar p-n junction devices; simulation and experimental results are presented. The limitations imposed by the ohmic contacts are successfully overcome by the introduction of capacitively coupled remote contacts, which yield similar results without any significant loss in the estimated material and device parameters. It is observed that the LBIC measurements introduce artefacts such as shift in peak position with increasing laser power. Simulation of LBIC signal as a function of characteristic length L-c of photo-generated carriers and for different beam diameters has resulted in the observed peak shifts, thus attributed to the finite size of the beam. Further, the idea of capacitively coupled contacts has been extended to contactless measurements using pressure contacts with an oxidized aluminium electrodes. This technique avoids the contagious sample processing steps, which may introduce unintentional defects and contaminants into the material and devices under observation. Thus, we present here, the remote contact LBIC as a practically non-destructive tool in the evaluation of device parameters and welcome its use during fabrication steps. (C) 2014 AIP Publishing LLC.

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We demonstrate the generation of an isotopically pure beam of laser-cooled Yb atoms by deflection using 1D-optical molasses. Atoms in a collimated thermal beam are first slowed using a Zeeman slower. They are then subjected to a pair of molasses beams inclined at 45(a similar to) with respect to the slowed atomic beam. The slowed atoms are deflected and probed at a distance of 160 mm. We demonstrate the selective deflection of the bosonic isotope Yb-174 and the fermionic isotope Yb-171. Using a transient measurement after the molasses beams are turned on, we find a longitudinal temperature of 41 mK.

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The effects of evaporation and the presence of agglomerating nanoparticles on the oscillation characteristics of pendant droplets are studied experimentally using ethanol and aqueous nanoalumina suspension, respectively. Axisymmetric oscillations induced by a round air jet are considered. Wavelet transform of the time evolution of the 2nd modal coefficient revealed that while a continuous increase in the natural frequency of the droplet occurs with time due to the diameter regression induced by vaporization in the case of ethanol droplet, no such change in resonant frequency occurs in the case of the agglomerating droplet. However, a gradual reduction in the oscillation amplitude ensues as the agglomeration becomes dominant. (C) 2014 Elsevier Ltd. All rights reserved.

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Active trailing edge flaps (TEFs) are one of the most promising devices for helicopter vibration reduction. Smart actuators such as the piezoelectric stack actuators (PEAs) are used for TEF actuation. PEAs possess high energy density and have large force in dynamic condition but are limited to small displacements. In this investigation, we study a linear to rotary motion amplification mechanism (AM-2) based on a pinned-pinned post-buckled beam to actuate trailing edge flaps. A linear motion amplification mechanism is developed and coupled with AM-2 to amplify angular flap deflections. Experiments are conducted on bench top-test setup, and maximum flap angle deflections of the order of 12A degrees are achieved in the static case. An aeroelastic analysis is performed and 91 % reduction in helicopter vibration is obtained with multiharmonic control inputs.

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We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device. (C) 2014 AIP Publishing LLC.

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Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 degrees C shows better crystallinity with the rocking curve FWHM 0.67 degrees and 0.85 degrees along 0 0 0 1] and 1 - 1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room temperature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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In the immediate surroundings of our daily life, we can find a lot of places where the energy in the form of vibration is being wasted. Therefore, we have enormous opportunities to utilize the same. Piezoelectric character of matter enables us to convert this mechanical vibration energy into electrical energy which can be stored and used to power other device, instead of being wasted. This work is done to realize both actuator and sensor in a cantilever beam based on piezoelectricity. The sensor part is called vibration energy harvester. The numerical analyses were performed for the cantilever beam using the commercial package ANSYS and MATLAB. The cantilever beam is realized by taking a plate and fixing its one end between two massive plates. Two PZT patches were glued to the beam on its two faces. Experiments were performed using data acquisition system (DAQ) and LABVIEW software for actuating and sensing the vibration of the cantilever beam.