Optimal Power and Noise for Analog and Digital Sections of a Low Power Radio Receiver

We determine the optimal allocation of power between the analog and digital sections of an RF receiver while meeting the BER constraint. Unlike conventional RF receiver designs, we treat the SNR at the output of the analog front end (SNRAD) as a design parameter rather than a specification to arrive at this optimal allocation. We first determine the relationship of the SNRAD to the resolution and operating frequency of the digital section. We then use power models for the analog and digital sections to solve the power minimization problem. As an example, we consider a 802.15.4 compliant low-IF receiver operating at 2.4 GHz in 0.13 μm technology with 1.2 V power supply. We find that the overall receiver power is minimized by having the analog front end provide an SNR of 1.3dB and the ADC and the digital section operate at 1-bit resolution with 18MHz sampling frequency while achieving a power dissipation of 7mW.

Voltage and Temperature Scalable Standard Cell Leakage Models Based on Stacks for Statistical Leakage Characterization

With extensive use of dynamic voltage scaling (DVS) there is increasing need for voltage scalable models. Similarly, leakage being very sensitive to temperature motivates the need for a temperature scalable model as well. We characterize standard cell libraries for statistical leakage analysis based on models for transistor stacks. Modeling stacks has the advantage of using a single model across many gates there by reducing the number of models that need to be characterized. Our experiments on 15 different gates show that we needed only 23 models to predict the leakage across 126 input vector combinations. We investigate the use of neural networks for the combined PVT model, for the stacks, which can capture the effect of inter die, intra gate variations, supply voltage(0.6-1.2 V) and temperature (0 - 100degC) on leakage. Results show that neural network based stack models can predict the PDF of leakage current across supply voltage and temperature accurately with the average error in mean being less than 2% and that in standard deviation being less than 5% across a range of voltage, temperature.

A 100MHz to 1GHz, 0.35V to 1.5V Supply 256 x 64 SRAM Block Using Symmetrized 9T SRAM Cell with Controlled Read

In this paper, we present dynamic voltage and frequency Managed 256 x 64 SRAM block in 65 nm technology, for frequency ranging from 100 MHz to 1 GHz. The total energy is minimized for any operating frequency in the above range and leakage energy is minimized during standby mode. Since noise margin of SRAM cell deteriorates at low voltages, we propose static noise margin improvement circuitry, which symmetrizes the SRAM cell by controlling the body bias of pull down NMOS transistor. We used a 9T SRAM cell that isolates Read and hold noise margin and has less leakage. We have implemented an efficient technique of pushing address decoder into zigzag- super-cut-off in stand-by mode without affecting its performance in active mode of operation. The read bit line (RBL) voltage drop is controlled and pre-charge of bit lines is done only when needed for reducing power wastage.

Energy Reduction in SRAM using Dynamic Voltage and Frequency Management

This paper describes a dynamic voltage frequency control scheme for a 256 X 64 SRAM block for reducing the energy in active mode and stand-by mode. The DVFM control system monitors the external clock and changes the supply voltage and the body bias so as to achieve a significant reduction in energy. The behavioral model of the proposed DVFM control system algorithm is described and simulated in HDL using delay and energy parameters obtained through SPICE simulation. The frequency range dictated by an external controller is 100 MHz to I GHz. The supply voltage of the complete memory system is varied in steps of 50 mV over the range of 500 mV to IV. The threshold voltage range of operation is plusmn100 mV around the nominal value, achieving 83.4% energy reduction in the active mode and 86.7% in the stand-by mode. This paper also proposes a energy replica that is used in the energy monitor subsystem of the DVFM system.

Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.

Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.

Compiler-Directed Frequency and Voltage Scaling for a Multiple Clock Domain

Multiple Clock Domain processors provide an attractive solution to the increasingly challenging problems of clock distribution and power dissipation. They allow their chips to be partitioned into different clock domains, and each domain’s frequency (voltage) to be independently configured. This flexibility adds new dimensions to the Dynamic Voltage and Frequency Scaling problem, while providing better scope for saving energy and meeting performance demands. In this paper, we propose a compiler directed approach for MCD-DVFS. We build a formal petri net based program performance model, parameterized by settings of microarchitectural components and resource configurations, and integrate it with our compiler passes for frequency selection.Our model estimates the performance impact of a frequency setting, unlike the existing best techniques which rely on weaker indicators of domain performance such as queue occupancies(used by online methods) and slack manifestation for a particular frequency setting (software based methods).We evaluate our method with subsets of SPECFP2000,Mediabench and Mibench benchmarks. Our mean energy savings is 60.39% (versus 33.91% of the best software technique)in a memory constrained system for cache miss dominated benchmarks, and we meet the performance demands.Our ED2 improves by 22.11% (versus 18.34%) for other benchmarks. For a CPU with restricted frequency settings, our energy consumption is within 4.69% of the optimal.

Design enhancement of the underwater noise control linings through a parsimonious parametric study

Control of sound transmission through the structure and reflection from the structure immersed in fluid media impose highly conflicting requirements on the design of the carpeted noise control linings. These requirements become even more stringent if the structure is expected to be moving with considerable speed particularly under intense hydrostatic pressure. Numerous configurations are possible for designing these linings. Therefore, in this paper, a few lining configurations are identified from the literature for parametric study so that the designer is provided with an environment to analyze and design the lining. A scheme of finite element analysis is used to analyze these linings for their acoustic performance. Commercial finite element software, NISA®, is used as a platform to develop a customized environment wherein design parameters of different configurations can be varied with consistency checks and generate the finite element meshes using the 8-noded hexahedral element. Four types of designs proposed and analysed here address the parameters of interest such as the echo reduction and the transmission loss. Study of the effect of different surface distributions of the cavities is carried out. Effect of static pressure on different designs is reported.

A Multilevel inverter structure with cascaded two level and three level inverters for IM drive with CMV elimination and DC link capacitor voltage balancing

Common mode voltage (CMV) variations in PWM inverter-fed drives generate unwanted shaft and bearing current resulting in early motor failure. Multilevel inverters reduce this problem to some extent, with higher number of levels. But the complexity of the power circuit increases with an increase in the number of inverter voltage levels. In this paper a five-level inverter structure is proposed for open-end winding induction motor (IM) drives, by cascading only two conventional two-level and three-level inverters, with the elimination of the common mode voltage over the entire modulation range. The DC link power supply requirement is also optimized by means of DC link capacitor voltage balancing, with PWM control, using only inverter switching state redundancies. The proposed power circuit gives a simple power bus structure.