241 resultados para Thermal Physics
Resumo:
Initiation and propagation processes in thermally initiated solid-state polymerization of sodiumvacrylate have been studied. The kinetics of initiation, followed with the electron spin resonancev technique, leads to an activation energy E of 28.8 kcal/mol, which is attributed to the formation of dimeric radicals. The activation energy of 16 f 1 kcaVmol obtained for the solid-state polymerization of sodium acrylate by chemical analysis and differential scanning calorimetry has been attributed to the propagation process.
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The scanning thermogram of a block sample of a double-base propellant shows a shoulder around 200°C which is not observed in a powder sample of the sample propellant. The heat of decomposition was also found to be different In the two cases. Product analysis and activation energy calculations show that nitroglycerine un dergoes decomposition in the block sample, whereas it vaporizes in the powder sample.
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The role of imperfections in thermal polymerization of acrylamide in the solid state was studied. The polymer yield and the degree of polymerization are highly dependent on the particle size and on the pressure to which the monomer is subjected prior to polymerization reaction. There is an enhancement in the rate of polymerization in air unlike in the case of radiation-induced polymerization. Thermal polymerization of acrylamide in pelletized form results in the formation of water-soluble linear polymer and water-insoluble cross-linked product with the evolution of ammonia. The activation energy (E) values obtained in the present investigation reveal that basically there are two processes taking place, one with E = 34–36 kcal/mole, corresponding to the initiation process, and the other with E = 19 ± 3 kcal/more for the propagation process.
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Ring-opening thermal polymerization of hexachlorocyclotriphosphazene (N3P3C&h)a s been investigated at 250 "C and at 1.333-Pa pressure using chlorocyclotriphosphazenes N3P3C15(N=PPh3) and N3P3Cl,.,(NMe2), (n = 2-4), salt hydrates, triphenylphosphine, and benzoic acid as initiators. The linear poly (dich1orophosphazene) products are phenoxylated, and the phenoxy polymers are characterized by gel permeation chromatography and dilute solution viscometry. Among the various initiators investigated, CaS04.2H20b rings about a high conversion (>60%) of N3P3C&to the linear [NPC12], polymer which possesses a high molecular weight (>5 X lo6). The rationale for the choice of the initiators and possible mechanism(s) of polymerization is discussed. Several mixed substituent polymers, [NP(OPh),(OC6H4Me-p)2,1, and [NP(OPh),(OCHzCF3)2,]nh, ave been prepared and their thermal properties evaluated.
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A study of Bi-doped amorphous (Ge42S58)100−xBix and Ge20S80−xBix has been carried out by differential thermal analysis (DTA) and X-ray diffraction methods so as to elucidate the impurity-induced modifications in the semiconductors. Thermal analysis reveals the presence of complex structural units in the modified material. An interesting feature of this study is the existence of a double glass transition in Ge20S80−xBix, which is reported for the first time in this system.
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Electromagnetically induced transparency (EIT) experiments in Lambda-type systems benefit from the use of hot vapor where the thermal averaging results in reducing the width of the EIT resonance well below the natural linewidth. Here, we demonstrate a technique for further reducing the EIT width in room-temperature vapor by the application of a small longitudinal magnetic field. The Zeeman shift of the energy levels results in the formation of several shifted subsystems; the net effect is to create multiple EIT dips each of which is significantly narrower than the original resonance. We observe a reduction by a factor of 3 in the D2 line of 87Rb with a field of 3.2 G.
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A strong-coupling expansion for the Green's functions, self-energies, and correlation functions of the Bose-Hubbard model is developed. We illustrate the general formalism, which includes all possible (normal-phase) inhomogeneous effects in the formalism, such as disorder or a trap potential, as well as effects of thermal excitations. The expansion is then employed to calculate the momentum distribution of the bosons in the Mott phase for an infinite homogeneous periodic system at zero temperature through third order in the hopping. By using scaling theory for the critical behavior at zero momentum and at the critical value of the hopping for the Mott insulator–to–superfluid transition along with a generalization of the random-phase-approximation-like form for the momentum distribution, we are able to extrapolate the series to infinite order and produce very accurate quantitative results for the momentum distribution in a simple functional form for one, two, and three dimensions. The accuracy is better in higher dimensions and is on the order of a few percent relative error everywhere except close to the critical value of the hopping divided by the on-site repulsion. In addition, we find simple phenomenological expressions for the Mott-phase lobes in two and three dimensions which are much more accurate than the truncated strong-coupling expansions and any other analytic approximation we are aware of. The strong-coupling expansions and scaling-theory results are benchmarked against numerically exact quantum Monte Carlo simulations in two and three dimensions and against density-matrix renormalization-group calculations in one dimension. These analytic expressions will be useful for quick comparison of experimental results to theory and in many cases can bypass the need for expensive numerical simulations.
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The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is reported. The effect of annealing is also studied. The glass undergoes a polymorphous or congruent crystallization under high pressures. The high pressure phase is found to have fcc structure with Image . Under thermal treatment the glass undergoes the double stage crystallization. The sample annealed at the first crystallization temperature shows a pressure induced semiconductor-to-metal transition at 4.0 GPa pressure and the crystalline Ge20Te80 samples show the transition at 7 GPa pressure.
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The effect of deposition of Al +Al2O3 on MRI 153 M Mg alloy processed using a pulsed Nd:YAG laser is presented in this study. A composite coating with metallurgical joint to the substrate was formed. The microstructure and phase constituents were characterized and correlated with the thermal predictions. The laser scan speed had an effect on the average melt depth and the amount of retained and/or reconstituted alumina in the final coating. The coating consisted of alumina particles and highly refined dendrites formed due to the extremely high cooling rates (of the order of 10(8) K/s). The microhardness of the coating was higher and several fold improvement of wear resistance compared to the substrate was observed for the coatings. These microstructural features and physical properties were correlated with the effects predicted by a thermal model.
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Mossbauer effect and X-ray measurements are carried out on product samples of the thermogravimetric analysis (TGA) and isothermal decomposition in hydrogen of homogeneously mixed ferrous nickel oxalates with different iron to nickel ratios. The formation of Fe-Ni alloy is obtained at considerably lower temperatures (z 300 "C) in each case. The Fe-Ni alloys obtained shift from iron-rich to nickel-rich composition as the nickel ratio in the mixed metal oxalates is increased. The formation of Pe-Ni Invar from mixed metal oxalate with Fe:Ni = 1:l is indicated in the early stages but not from those with Fe:Ni = 2: 1 or 64:36. An Produktproben von homogen verteilten Eisen-Nickeloxalaten mit unterschiedlichem Eisen- Nickel-Verhaltnis nach thermogravimetrischer Analyse (TGA) und isothermem Zerfall in Wasserstoff werden Mollbauereffekt- und Rontgenmessnngen durchgefuhrt. In allen Fiillen wird die Bildung der Fe-Ni-Legierung bei betriichtlich niedrigeren Temperaturen (= 300 "C) erhalten. Die erhaltenen Fe-Ni-Legierungen verschieben sich von der eisenreichen zur nickelreichen Zusrtmmensetzung, wenn das Nickelverhaltnis in dem BIetall-Mischoxalat erhoht wird. Die Bildung der Fe-Ni-lnvar-Legierung aus dem Metall-Mischoxalat mit Fe:Ni = 1 : 1 wird in fruhen Zustanden beobachtet, iedoch nicht aus Oxalaten mit Fe:Ni = 2:1 oder 64:36.
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A comparison with the alkali halides suggests that all the ammonium halides should occur in the NaCl centre-of-mass structure. Experimentally, at room temperature and atmospheric pressure, only NH,1 crystallizes in this structure, while NH,F is found in the ZnO structure, and NH&I and NH,Br occur in the CsCl structure. We show that a distributed charge on the NH,+ ion can explain these structures. Taking charges of + 0.2e on each of the five atoms in NH,+, as suggested by other studies, we have recomputed the Madelung energy in the cases of interest. A full ionic theory including electrostatic, van der Waals and repulsive interactions then explains the centre-of-mass structures of all the four ammonium halides. The thermal and pressure transitions are also explained reasonably well. The calculated phase diagram of NH,F compares well with experiment. Barring the poorly understood NH,F(II) phase, which is beyond the scope of this work, the other features are in qualitative agreement. In particular, the theory correctly predicts a pressure transition at room temperature from the ZnO structure directly to the CsCl structure without an intermediate NaCl phase. A feature of our approach is that we do not need to invoke hydrogen bonding in NH,F.
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This work explores the electrical properties of p-SnS/n-ITO heterojunction at different temperatures. The p-type SnS film was deposited on n-type ITO substrate using the thermal evaporation technique and its junction properties were studied using two probe method. The as-grown p-n junction exhibited weak rectifying behaviour with a low Saturation current of the order of similar to 10(-6) A. While increasing temperature, the saturation current of the junction is increased and however, its series resistance decreased. At all temperatures the junction exhibited three types of transport mechanisms depending on applied bias-voltage. At lower voltages the junction showed nearly ideal diode characteristics. The junction behaviour with respect to bias-voltage and temperature is discussed with the help of existing theories and energy band diagram.
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Thermal decompositions of hydrazinium hydrogen oxalate (HHOX) and dihydrazinium oxalate (DOX) have been studied. DOX on heating is converted into HHOX and thereafter both follow the same pattern of decomposition.
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Abstract is not available.
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Titanium nitride surface layers were prepared by gas-phase thermal nitridation of pure titanium in an ammonia atmosphere at 1373 K for different times. In addition to the surface nitride layer, nitride/hydride formation was observed in the bulk of the specimen. The cross-section of the specimen was characterized by various techniques such as optical microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, secondary ion mass spectrometry and nanomechanical testing, and the mechanism of formation of these phases is discussed.