Transport properties of phosphomolybdate and phosphotungstate glasses

The d.c. conductivity of phosphomolybdate and phosphotungstate glasses is discussed. The conductivity of these glasses is due to the hopping of electrons between two valence states (Mo5+ to Mo6+ or W5+ W6+). In some of the glasses, the activation energy itself is found to be a function of temperature. This appears to be due to thermally activated and variable-range hopping mechanisms operating in different temperature regimes. The relation between conductivity and the [M5+]/[Mtotal](M ≡ Mo, W) ratio does not show any systematic variation. This anomaly can be understood using the structural models of these glasses. In contrast, Mott's theory and the Triberis and Friedman model have been used to obtain conductivity parameters such as the percolation distance Rij and 2agrRij (agr is the tunnelling probability). The conductivity parameter 2agrRij is quite useful to resolve the controversy regarding the tunnelling term exp(2agrRij) existing in the literature. For low values of 2agrRij, it is shown that the exp (2agrRij) term is very significant.

Elastic properties of PbS-As2S3 glasses

The temperature dependence of the longitudinal and shear ultrasound wave velocities in (As2S3)1-x(PbS)x glasses has been determined from 77 to 300K using a pulse echo interferometer. Elastic constants of the prepared glasses at room temperature have been computed from the experimental data. Both longitudinal and shear ultrasound wave velocities in these glasses show a linear temperature dependence with a negative temperature coefficient.

Mechanical and Chemical Thresholds in IV-VI Chalcogenide Glasses

It has been possible to identify two critical compositions in the IV-VI chalcogenide glassy system GexSe100-x by the anomalous variations of the high-pressure electrical resistivity behavior. The first critical composition, the chemical threshold, refers to the stoichiometric composition. The second critical composition, identified recently as the mechanical percolation threshold, is connected with the structural rigidity of the material.

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. (c) 2010 Elsevier B.V. All rights reserved.

Thermodynamic partial properties of Na2O in Nasicon solid solution, Na1+xZr2SixP3-xO12

The thermodynamic activity of sodium oxide (Na2O) in the Nasicon solid solution series, Na1+xZr2SixO12, has been measured in the temperature range 700�1100 K using solid state galvanic cells: Pt|CO2 + O2|Na2CO3?Na1+xZr2SixP3-xO12?(Y2O3)ZrO2?In + In2O3|Ta, Pt for 1 = ? = 2.5, and Pt?CO2 + O2?Na2CO3?ß-alumina?Na1+xZr2SixP3-xO12?Ar + O2?Pt for x = 0, 0.5, 2.5, and 3. The former cell, where the Nasicon solid solution is used as an electrolyte along with yttria-stabilized zirconia, is well suited for Nasicon compositions with high ionic conductivity. In the latter cell, ß-alumina is used as an electrolyte and the Nasicon solid solution forms an electrode. The chemical potential of Na2O is found to increase monotonically with x at constant temperature. The partial entropy of Na2O decreases continuously with x. However, the partial enthalpy exhibits a maximum at x = 2. This suggests that the binding energy is minimum at the composition where ionic conductivity and cell volume have maximum values.

Direct current electrical resistivity of zinc borate glasses containing transition metal oxides

The resistivities of zinc borate glasses containing Fe2O3, V2O5, and Fe2O3 + V2O5 have been measured as a function of composition and temperature. The values of resistivity and activation energy decrease as the transition metal oxide content is increased. The conductivities of the glasses containing Fe2O3 + V2O5 are more than the sum of those of the glasses containing only Fe2O3 or V2O5 (i.e. the activation energies are less than the sum of those in the glasses containing only Fe2O3 or V2O5). The results are discussed in terms of existing theories.

Potentiometric determination of activities in the two-phase fields of the system Na2O---(α)Al2O3

Three compounds have been found to be stable in the pseudobinary system Na2O---(α)Al2O3 between 825 and 1400 K; two nonstoichiometric phases, β-alumina and β″-alumina, and NaAlO2. The homogeneity of β-alumina ranges from 9.5 to 11 mol% Na2O, while that of β″-alumina from 13.3 to 15.9 mol% Na2O at 1173 K. The activity of Na2O in the two-phase fields has been determined by a solid-state potentiometric technique. Since both β- and β″-alumina are fast sodium ion conductors, biphasic solid electrolyte tubes were used in these electrochemical measurements. The open circuit emf of the following cells were measured from 790 to 980 K: [GRAPHICS] The partial molar Gibbs' energy of Na2O relative to gamma-Na2O in the two-phase regions can be represented as: DELTA-GBAR(Na2O)(alpha- + beta-alumina) = -270,900 + 24.03 T, DELTA-GBAR(Na2O)(beta- + beta"-alumina) = -232,700 + 56.19 T, and DELTA-GBAR(Na2O)(beta"-alumina + NaAlO2) = -13,100 - 4.51 T J mol-1. Similar galvanic cells using a Au-Na alloy and a mixture of Co + CoAl(2+2x)O4+3x + (alpha)Al2O3 as electrodes were used at 1400 K. Thermodynamic data obtained in these studies are used to evaluate phase relations and partial pressure of sodium in the Na2O-(alpha) Al2O3 system as a function of oxygen partial pressure, composition and temperature.

Varistors based on mixed‐phase ceramics containing ZnO and negative temperature coefficient spinels

High nonlinearity coefficients of 60–150 are observed in the current‐voltage (I‐V) curves of the mixed phase ceramics formed by cosintering ZnO with spinel phases having large negative temperature coefficients (NTCs) in resistivity. The region of negative slope in the I‐V curves of the NTC ceramics is progressively made positive with ZnO phase content, wherein ZnO grains function as a built‐in resistor in series to the resistance of the NTC phase. High α depends on the optimum phase content of ZnO as much as its intrinsic conductivity. The studies indicate that the predominent contribution to power dissipation is by way of joule heating from the resistive component of the current.

Dielectric and Impedance Studies on 0.5Li(2)O-0.5K(2)O-2B(2)O(3) Glasses

Transparent glasses in the system 0.5Li(2)O-0.5K(2)O-2B(2)O(3) (LKBO) were fabricated via the conventional melt quenching technique. Amorphous and glassy nature of the samples was confirmed by X-ray diffraction and differential scanning calorimetry (DSC) respectively. Complex dielectric and impedance studies were conducted on the samples at different temperatures in the 100 Hz-10 MHz frequency range. ac conductivity was calculated from the dielectric data and the conductivity relaxation was found to obey the Jonscher's law. The Nyquist's plots (Z `'(omega) vs. Z'(omega)) showed single suppressed semicircles at all the temperatures under study indicating the non ideal Debye type relaxation process to be active. Activation energies for conduction and relaxation process were calculated using the Arrhenius relation. The UV-visible optical transmission spectra was shown a wide transmission window and calculated optical band gap was found to be 5.67 eV.