276 resultados para SOLIDS


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There is a constant effort to understand the defect structure and diffusion behavior in intermetallic compounds with the A15 structure. Diffusion of elements in intermetallic compounds depends mainly on antisites and vacancies on different sublattices. In this article, we shall discuss the diffusion of elements in A(3)B compounds with the A15 structure.

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Study of interdiffusion in the Co-Mo system is important to understand the performance of turbine blades in jet engine applications. Mo is added to superalloys to increase the solid solution strengthening and the creep resistance. In this study, the interdiffusion coefficient in the Co(Mo) solid solution and impurity diffusion coefficient of Mo in Co are determined. Further, the activation energy and pre-exponential factors are calculated, which provide an idea about the atomic mechanism of diffusion.

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The chemical-shift of the X-ray K-absorption edge of Co was studied in a large number of compounds, complexes (spinels) and minerals of Co in its different oxidation states having widely different crystal structures and containing different types of bonding and various types of ligands, and were reported collectively, for the first time, in a single paper. A quadratic relationship was established on the basis of least-squares regression analysis to hold between the chemical-shift and the effective charge on the absorbing atom, but the dominance of the linear term was shown. This relation was utilized in evaluating the charge on the Co-ion in a number of minerals. The effect on chemical-shift of oxidation states of the absorbing atom, of the bond length, crystal structure and higher shell atoms of the molecule, and of electronegativity, atomic number and ionic radius of the ligand was discussed.

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The authors have developed a simple continuous-cooling method to determine specific heat of liquids and solids in the temperature range 100-300 K. The technique employs very simple instrumentation and continuously records the sample temperature as it cools to the bath temperature through a calibrated heat link. They have obtained specific heat values which agree with the reported data to within 3% for the samples investigated. This method also facilitates easy detection of abrupt changes in specific heat, as demonstrated in the observation of glass transition in some organic glass-forming systems. The method is sensitive to the study of relaxing heat capacity in supercooled liquids.

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Nb3Sn growth following the bronze technique, (i.e. by interdiffusion between Cu(Sn) alloy (bronze) and Nb) is one of the important methodologies to produce this superconductor. In this study, we have addressed the confusion over the growth rate of the Nb3Sn phase. Furthermore, a possible explanation for the corrugated layer in the multifilamentary structure is discussed. Kirkendall marker experiments were conducted to study the relative mobilities of the species, which also explained the reason for finding pores in the product phase layer. Based on the parabolic growth constant at different temperatures, the activation energy for the growth is determined. We have further explained the dramatic increase in the growth rate of the prod

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The effect of Dolapix PC75 on the electrokinetic and rheological behavior of nano zirconia particles is presented here. The effect of pH, concentration of dispersant, and solids loading on zeta-potential and rheological behavior was studied. Upon interaction with the dispersant, the iso-electric point of zirconia changed and the surface became more negative with increasing concentration of dispersant, suggesting a strong interaction. Maximum charge was obtained in the presence of about 200ppm of Dolapix. Rheological tests at pH 7 showed that the zirconia suspension is viscous at high solids loading and addition of the dispersant decreased the viscosity substantially especially at high solids loading (50wt%). Sedimentation tests confirmed that Dolapix PC75 is a good dispersant for zirconia particles at pH values of 7 and above.

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Wide-line c.w. proton resonance investigations have been carried out on the ammonium halides, namely, ammonium chloride, ammonium bromide and ammonium iodide in the temperature range between 77 and 300 K and in the pressure range between 1 bar and 14 kbar. It has been found that the narrow iodide spectrum at 77 K broadens under the application of hydrostatic pressure. The barrier height for the ammonium ion motion in ammonium iodide under pressure has been estimated by carrying out a temperature variation study. The rotational potential for the motion of ammonium ion in ammonium iodide at 1 bar and 14 kbar has been calculated using earlier theoretical models and compared with values calculated for ammonium chloride and bromide. The barrier height in the case of ammonium iodide under pressure is found to be of the same order of magnitude as the value obtained in the case of ammonium bromide at atmospheric pressure indicating that the high pressure phase of ammonium iodide is likely to have the same structure as the low temperature ordered CsCl phase found in the case of the chloride and the bromide. The increase in the potential barrier height in the case of ammonium iodide under pressure indicates that the reorientational motion executed by the ammonium ions is inhibited by the application of pressure. This is also confirmed by the broadening of the spectral line at 77 K under the application of pressure.

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Laboratory results of marked-ball wear tests are used to discuss the relative significance of corrosive and abrasive wear in wet grinding. The electrochemical mechanism was investigated by correlating the corrosive wear with the corrosion current obtained from polarization curves under abrasion. Slurry rheology governs the manner in which ground slurries coat grinding balls, thereby influencing not only the grinding efficiency but also abrasive wear. The effects of percent solids and a grinding aid are illustrated.

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A new series of molybdenum cluster compounds of the general formula AxMo5As4(A = Cu, Al, or Ga) has been synthesized. They are isostructural with the host Mo5As4(Ti5Te4-type) consisting of trans-vertex shared Mo6 octahedral chains. Investigations by X-ray photoelectron and Auger electron spectroscopies revealed a charge transfer from A to Mo5As4 in AxMo5As4. The occurrence of metallic (CuxMo5As4) and non-metallic (Al2Mo5As4 and Ga2Mo5As4) properties in this isostructural series of solids is consistent with the electronic structure of Ti5Te4-type solids involving M–M bonding in the cluster chains.

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Ionic conductivity measurements have been made on pure, copper-doped and cadmium-doped single crystals. Dielectric measurements in the frequency range 30Hz–100Hz showed that there was no anomalously to be (0.64 ± 0.02) eV and migration energies for silver ion intersitials and vacancies in the c direction to be (0.41 ± 0.02) eV and (0.50 ± 0.02) eV respectively. ESR measurements have shown that copper exists as Cu+ in these crystals. Dielectric measurements in the frequency range (OHz–100KHz showed that there was no anomalously high value for ε as reported earlier.

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A Green's function technique is used in the scattering matrix formalism to compute the mean square displacement of hydrogen and deuterium interstitials in the intermetallic compound Fe0.5Ti0.5 for low hydrogen/deuterium concentration. The mean square amplitudes of the metal atoms surrounding the interstitial are found to be smaller than those for the host crystal. This anomalous effect is due to the stiffening of the lattice by the dissolved hydrogen or deuterium at low concentration. This type of effect is experimentally observed in the case of NbHx at low hydrogen concentration.

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Alternating Differential Scanning Calorimetric (ADSC) and electrical switching studies have been undertaken on Ge20Se80-xBix glasses (1 <= x <= 13), to understand the effect of topological thresholds on thermal properties and electrical switching behavior. It is found that the compositional dependence of glass transition temperature (Tg), crystallization temperature (T-c1) and thermal stability (AT) of Ge20Se80-xBix glasses show anomalies at a composition x= 5, the rigidity percolation/stiffness threshold of the system. Further, unusual variations are also observed in different thermal properties, such as T-g, T-c1, Delta T, Delta C-p and Delta H-NR, at the composition x= 10, which indicates the occurrence of chemical threshold in these glasses at this composition. Electrical switching studies indicate that Ge20Se8o_RBig glasses with 5 11 exhibit threshold switching behavior and those with x = 12 and 13 show memory switching. A sharp decrease has been noticed in the switching voltages with bismuth concentration, which is due to the more metallic nature of bismuth and the presence of Bi+ ions. Further, a saturation is seen in the decrease in V-T around x = 6, which is related to bismuth phase percolation at higher concentrations of Bi. (C) 2010 Elsevier B.V. All rights reserved.

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This study focuses on the temperature dependent optical band gap changes in the amorphous Ge2Sb2Te5 (GST) films. The behavior of the amorphous GST thin films at low temperatures has been studied. The band gap increment of around 0.2 eV is observed at low temperature (4.2 K) compared to room temperature (300 K). The band gap changes associated with the temperature are completely reversible. The other optical parameters like Urbach energy and Tauc parameter (B-1/2) are studied for different temperatures and discussed. The observed changes in optical band gap (E-g) are fitting to Fan's one phonon approximation. Phonon energy ((h) over bar omega) corresponding to a frequency of 3.59 THz is derived from Fan's approximation, which is close to the reported value of 3.66 THz. (C) 2010 Elsevier B.V. All rights reserved.

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The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.

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Graphene oxide-intercalated alpha-metal hydroxides were prepared using layers from the delaminated colloidal dispersions of cetyltrimethylammonium-intercalated graphene oxide and dodecylsulfate-intercalated alpha-hydroxide of nickel/cobalt as precursors. The reaction of the two dispersions leads to de-intercalation of the interlayer ions from both the layered solids and the intercalation of the negatively charged graphene oxide sheets between the positively charged layers of the alpha-hydroxide. Thermal decomposition of the intercalated solids yields graphene/nanocrystalline metal oxide composites. Electron microscopy analysis of the composites indicates that the nanoparticles are intercalated between graphene layers. (C) 2010 Elsevier Ltd. All rights reserved.