Bi-Modal DRAM Cache: Improving Hit Rate, Hit Latency and Bandwidth

In this paper, we present Bi-Modal Cache - a flexible stacked DRAM cache organization which simultaneously achieves several objectives: (i) improved cache hit ratio, (ii) moving the tag storage overhead to DRAM, (iii) lower cache hit latency than tags-in-SRAM, and (iv) reduction in off-chip bandwidth wastage. The Bi-Modal Cache addresses the miss rate versus off-chip bandwidth dilemma by organizing the data in a bi-modal fashion - blocks with high spatial locality are organized as large blocks and those with little spatial locality as small blocks. By adaptively selecting the right granularity of storage for individual blocks at run-time, the proposed DRAM cache organization is able to make judicious use of the available DRAM cache capacity as well as reduce the off-chip memory bandwidth consumption. The Bi-Modal Cache improves cache hit latency despite moving the metadata to DRAM by means of a small SRAM based Way Locator. Further by leveraging the tremendous internal bandwidth and capacity that stacked DRAM organizations provide, the Bi-Modal Cache enables efficient concurrent accesses to tags and data to reduce hit time. Through detailed simulations, we demonstrate that the Bi-Modal Cache achieves overall performance improvement (in terms of Average Normalized Turnaround Time (ANTT)) of 10.8%, 13.8% and 14.0% in 4-core, 8-core and 16-core workloads respectively.

An efficient design of serial and parallel memory using Quantum dot cellular automata

Quantum cellular automata (QCA) is a new technology in the nanometer scale and has been considered as one of the alternative to CMOS technology. In this paper, we describe the design and layout of a serial memory and parallel memory, showing the layout of individual memory cells. Assuming that we can fabricate cells which are separated by 10nm, memory capacities of over 1.6 Gbit/cm2 can be achieved. Simulations on the proposed memories were carried out using QCADesigner, a layout and simulation tool for QCA. During the design, we have tried to reduce the number of cells as well as to reduce the area which is found to be 86.16sq mm and 0.12 nm2 area with the QCA based memory cell. We have also achieved an increase in efficiency by 40%.These circuits are the building block of nano processors and provide us to understand the nano devices of the future.

All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices

We demonstrate all inorganic, robust, cost-effective, spin-coated, two-terminal capacitive memory metal-oxide nanoparticle-oxide-semiconductor devices with cadmium telluride nanoparticles sandwiched between aluminum oxide phosphate layers to form the dielectric memory stack. Using a novel high-speed circuit to decouple reading and writing, experimentally measured memory windows, programming voltages, retention times, and endurance are comparable with or better than the two-terminal memory devices realized using other fabrication techniques.