222 resultados para Microdefect densities
Resumo:
We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.
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The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra supports the optical changes happening in the film due to light exposure.
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We report microscopic structural and dynamical measurements on binary mixtures of homopolymers and polymer grafted nanoparticles at high densities in good solvent. We find strong and unexpected anomalies in the structure and dynamics of these binary mixtures, including appearance of spontaneous orientational alignment, as a function of added homopolymers of different molecular weights. Our experiments point to the possibility of exploiting the phase space in density and homopolymer size, of such hybrid systems, to create new materials with novel structural and physical properties.
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We present thermal and electrical transport measurements of low-density (10(14) m(-2)), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localized regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance h/e(2), the thermopower decreases linearly with temperature indicating metallicity. Remarkably, the magnitude of the thermopower exceeds the predicted value in noninteracting metallic 2DESs at similar carrier densities by over two orders of magnitude. Our results indicate a new quantum state and possibly a novel class of itinerant quasiparticles in dilute 2DESs at low temperatures where the Coulomb interaction plays a pivotal role.
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A series of novel organic-inorganic hybrid membranes have been prepared employing Nafion and acid-functionalized meso-structured molecular sieves (MMS) with varying structures and surface area. Acid-functionalized silica nanopowder of surface area 60 m(2)/g, silica meso-structured cellular foam (MSU-F) of surface area 470 m(2)/g and silica meso-structured hexagonal frame network (MCM-41) of surface area 900 m(2)/g have been employed as potential filler materials to form hybrid membranes with Nafion framework. The structural behavior, water uptake, proton conductivity and methanol permeability of these hybrid membranes have been investigated. DMFCs employing Nafion-silica MSU-F and Nafion-silica MCM-41 hybrid membranes deliver peak-power densities of 127 mW/cm(2) and 100 mW/cm(2), respectively; while a peak-power density of only 48 mW/cm(2) is obtained with the DMFC employing pristine recast Nafion membrane under identical operating conditions. The aforesaid characteristics of the hybrid membranes could be exclusively attributed to the presence of pendant sulfonic acid groups in the filler, which provide fairly continuous proton-conducting pathways between filler and matrix in the hybrid membranes facilitating proton transport without any trade-off between its proton conductivity and methanol crossover. (C) 2012 The Electrochemical Society. DOI: 10.1149/2.036211jes] All rights reserved.
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We investigate the possibility of projecting low-dimensional chaos from spatiotemporal dynamics of a model for a kind of plastic instability observed under constant strain rate deformation conditions. We first discuss the relationship between the spatiotemporal patterns of the model reflected in the nature of dislocation bands and the nature of stress serrations. We show that at low applied strain rates, there is a one-to-one correspondence with the randomly nucleated isolated bursts of mobile dislocation density and the stress drops. We then show that the model equations are spatiotemporally chaotic by demonstrating the number of positive Lyapunov exponents and Lyapunov dimension scale with the system size at low and high strain rates. Using a modified algorithm for calculating correlation dimension density, we show that the stress-strain signals at low applied strain rates corresponding to spatially uncorrelated dislocation bands exhibit features of low-dimensional chaos. This is made quantitative by demonstrating that the model equations can be approximately reduced to space-independent model equations for the average dislocation densities, which is known to be low-dimensionally chaotic. However, the scaling regime for the correlation dimension shrinks with increasing applied strain rate due to increasing propensity for propagation of the dislocation bands.
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In graphene, the valleys represent spinlike quantities and can act as a physical resource in valley-based electronics to produce novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of 4 when valley triplet states are gapped in the presence of short-range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry class that outlines a fundamental feature arising from graphene's unique crystal structure.
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We propose a distribution-free approach to the study of random geometric graphs. The distribution of vertices follows a Poisson point process with intensity function n f(center dot), where n is an element of N, and f is a probability density function on R-d. A vertex located at x connects via directed edges to other vertices that are within a cut-off distance r(n)(x). We prove strong law results for (i) the critical cut-off function so that almost surely, the graph does not contain any node with out-degree zero for sufficiently large n and (ii) the maximum and minimum vertex degrees. We also provide a characterization of the cut-off function for which the number of nodes with out-degree zero converges in distribution to a Poisson random variable. We illustrate this result for a class of densities with compact support that have at most polynomial rates of decay to zero. Finally, we state a sufficient condition for an enhanced version of the above graph to be almost surely connected eventually.
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Sum rules constraining the R-current spectral densities are derived holographically for the case of D3-branes, M2-branes and M5-branes all at finite chemical potentials. In each of the cases the sum rule relates a certain integral of the spectral density over the frequency to terms which depend both on long distance physics, hydrodynamics and short distance physics of the theory. The terms which which depend on the short distance physics result from the presence of certain chiral primaries in the OPE of two it-currents which are turned on at finite chemical potential. Since these sum rules contain information of the OPE they provide an alternate method to obtain the structure constants of the two R-currents and the chiral primary. As a consistency check we show that the 3 point function derived from the sum rule precisely matches with that obtained using Witten diagrams.
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The toplogical features of a sporadic trifurcated C-H center dot center dot center dot O interaction region, where an oxygen atom acts as an acceptor of three weak hydrogen bonds, has been investigated by experimental and theoretical charge density analysis of ferulic acid. The interaction energy of the asymmetric molecular dimer formed by the trifurcated C-H center dot center dot center dot O motif, based on the multipolar model, is shown to be greater than the corresponding asymmetric O-H center dot center dot center dot O dimer in this crystal structure. Further, the hydrogen bond energies associated with these interaction motifs have been estimated from the local kinetic and potential energy densities at the bond critical points. The trends suggest that the interaction energy of the trifurcated C-H center dot center dot center dot O region is comparable to that of a single O-H center dot center dot center dot O hydrogen bond.
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In this paper, a simple but accurate semi analytical charge sheet model is presented for threshold voltage of accumulation mode polycrystalline silicon on insulator (PSOI) MOSFETs. In this model, we define the threshold voltage (V-T) of the polysilicon accumulation mode MOSFET as the gate voltage required to raise the surface potential (phi(s)) to a value phi(sT) necessary to overcome the charge trapping in the grain boundary and to create channel accumulation charge that is equal to the channel accumulation charge available in the case of single crystal silicon accumulation mode MOSFET at that phi(sT). The correctness of the model is demonstrated by comparing the theoretically estimated values of threshold voltage with the experimentally measured threshold voltages on the accumulation mode PSOI MOSFETs fabricated in the laboratory using LPCVD polysilicon layers doped with boron to achieve dopant densities in the range 3.3 x 10(-15)-5 x 10(17)/cm(3). Further, it is shown that the threshold voltage values of accumulation mode PSOI MOSFETs predicted by the present model match very closely with the experimental results, better than those obtained with the models previously reported in the literature. (C) 2012 Elsevier B.V. All rights reserved.
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Porous zirconia ceramic monoliths have been extensively used in thermo-structural applications due to their inherent low thermal conductivity in combination with their adaptability to form complicated shapes through advanced ceramic processing techniques. However, extruded cellular honeycomb structures made from these materials have been less explored for thermal management applications. There exist large potential applications due to their unique configurations, resulting in better heat-management mechanisms. Some of the studies carried out on zirconia honeycombs are safeguarded through patents due to its technical importance, or the information is not in the public domain. In the present study, for the sake of comparison, honeycomb specimens with varying wall thicknesses and unit cell lengths maintaining almost same bulk density of around 90% theoretical and relative density of 0.34-0.37 were prepared and subjected to thermal conductivity evaluation along with the solid samples with relative density of 1.0 using monotonic heating regime methodology. In addition, the effect of channel shape was also evaluated using square and triangular channeled honeycombs with the same relative densities. The results obtained from these specimens were correlated with their configurations to bring out the advantages accrued by using the honeycomb with these configurations. It was observed that a significant decrease in thermal conductivity was achieved in honeycombs, which can be attributed to the behavior of various heat transfer mechanisms that are operative at high temperatures in combination with the considerable reduction in thermal mass and the consequent conduction through the solids.
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Organic-inorganic hybrid membranes are prepared from Nafion and acid functionalized aluminosilicate with varying structures and surface areas. Acid-functionalized mesostructured aluminosilicate with cellular foam framework (Al-MSU-F type) of surface area 463 m(2) g(-1), acid-functionalized aluminosilicate molecular sieves (Al-HMS type) of surface area 651 m(2) g(-1) and acid-functionalized mesostructured aluminosilicate with hexagonal network (Al-MCM-41 type) of surface area 799 m(2) g(-1) have been employed as potential filler materials to form hybrid membranes with Nafion. The structural behavior, water uptake, ion-exchange capacity, proton conductivity and methanol permeability of the hybrid membranes are extensively investigated. Direct methanol fuel cells (DMFCs) with Al-HMS-Nafion and Al-MCM-41-Nafion hybrid membranes deliver respective peak power-densities of 170 mW cm(-2) and 246 mW cm(-2), while a peak power-density of only 48 mW cm(-2) is obtained for the DMFC employing pristine recast-Nafion membrane under identical operating conditions. The unique properties associated with hybrid membranes could be exclusively attributed to the presence of pendant sulfonic-acid groups in the filler materials, which provide proton-conducting pathways between the filler and matrix in the hybrid membranes, and facilitate proton transport with adequate balance between proton conductivity and methanol permeability. (C) 2012 Elsevier Ltd. All rights reserved.
Resumo:
We report thermopower (S) and electrical resistivity (rho (2DES) ) measurements in low-density (10(14) m(-2)), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We observe at temperatures a parts per thousand(2)0.7 K a linearly growing S as a function of temperature indicating metal-like behaviour. Interestingly this metallicity is not Drude-like, showing several unusual characteristics: (i) the magnitude of S exceeds the Mott prediction valid for non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude; and (ii) rho (2DES) in this regime is two orders of magnitude greater than the quantum of resistance h/e (2) and shows very little temperature-dependence. We provide evidence suggesting that these observations arise due to the formation of novel quasiparticles in the 2DES that are not electron-like. Finally, rho (2DES) and S show an intriguing decoupling in their density-dependence, the latter showing striking oscillations and even sign changes that are completely absent in the resistivity.
Resumo:
This work is a continuation of our efforts to quantify the irregular scalar stress signals from the Ananthakrishna model for the Portevin-Le Chatelier instability observed under constant strain rate deformation conditions. Stress related to the spatial average of the dislocation activity is a dynamical variable that also determines the time evolution of dislocation densities. We carry out detailed investigations on the nature of spatiotemporal patterns of the model realized in the form of different types of dislocation bands seen in the entire instability domain and establish their connection to the nature of stress serrations. We then characterize the spatiotemporal dynamics of the model equations by computing the Lyapunov dimension as a function of the drive parameter. The latter scales with the system size only for low strain rates, where isolated dislocation bands are seen, and at high strain rates, where fully propagating bands are seen. At intermediate applied strain rates corresponding to the partially propagating bands, the Lyapunov dimension exhibits two distinct slopes, one for small system sizes and another for large. This feature is rationalized by demonstrating that the spatiotemporal patterns for small system sizes are altered from the partially propagating band types to isolated burst type. This in turn allows us to reconfirm that low-dimensional chaos is projected from the stress signals as long as there is a one-to-one correspondence between the bursts of dislocation bands and the stress drops. We then show that the stress signals in the regime of partially to fully propagative bands have features of extensive chaos by calculating the correlation dimension density. We also show that the correlation dimension density also depends on the system size. A number of issues related to the system size dependence of the Lyapunov dimension density and the correlation dimension density are discussed.