160 resultados para Indium hydroxide


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We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250-400 degrees C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (similar to 10-15 nm) and micron long ITO NWs growth was observed in a temperature window of 300-400 degrees C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300-400 degrees C have shown similar to 2-6% reflection and similar to 70-85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.

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Lime stabilization prevails to be the most widely adopted in situ stabilization method for controlling the swell-shrink potentials of expansive soils despite construction difficulties and its ineffectiveness in certain conditions. In addition to the in situ stabilization methods presently practiced, it is theoretically possible to facilitate in situ precipitation of lime in soil by successive permeation of calcium chloride (CaCl2 ) and sodium hydroxide (NaOH) solutions into the expansive soil. In this laboratory investigation, an attempt is made to study the precipitation of lime in soil by successive mixing of CaCl2 and NaOH solutions with the expansive soil in two different sequences.Experimental results indicated that in situ precipitation of lime in soil by sequential mixing of CaCl2 and NaOH solutions with expansive soil developed strong lime-modification and soil-lime pozzolanic reactions. The lime-modification reactions together with the poorly de- veloped cementation products controlled the swelling potential, reduced the plasticity index, and increased the unconfined compressive strength of the expansive clay cured for 24 h. Comparatively, both lime-modification reactions and well-developed crystalline cementation products (formed by lime-soil pozzolanic reactions) contributed to the marked increase in the unconfined compressive strength of the ex-pansive soil that was cured for 7–21 days. Results also show that the sequential mixing of expansive soil with CaCl2 solution followed by NaOH solution is more effective than mixing expansive soil with NaOH solution followed by CaCl2 solution. DOI: 10.1061/(ASCE)MT .1943-5533.0000483. © 2012 American Society of Civil Engineers.

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Monodisperse colloidal gold-indium (AuIn2) intermetallic nanoparticles have been synthesized from Au and In colloids using the digestive ripening process. Formation of the intermetallic proceeds via digestive ripening facilitated atomic diffusion of Au and In atoms from the Au and In nanoparticles followed simultaneously by their growth in the solution. Optimization of the reaction temperature was found to be crucial for the formation of AuIn2 intermetallic from gold and indium nanoparticles. Transmission electron microscopy revealed the presence of nearly monodisperse nanoparticles of Au and AuIn2 with particle size distribution of 3.7 +/- 1.0 nm and 5.0 +/- 1.6 nm, respectively. UV-visible spectral studies brought out the absence of SPR band in pure AuIn2 intermetallic nanoparticles. Optical study and electron microscopy, in combination with powder X-ray diffraction established phase pure AuIn2 intermetallic nanoparticles unambiguously. The potential of such an unprecedented approach has been further exploited in the synthesis of Ag3In intermetallic nanoparticles with the dimension of less than 10 nm. (C) 2014 Elsevier B.V. All rights reserved.

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In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the InxGa1 (-) As-x channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the InxGa1 (-) As-x layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the InxGa1 (-) As-x channel layer was pseudomorphically grown leading to tetragonal strain along the 001] growth direction and that the average indium content (x) in the epilayer is similar to 0.12. We found consistency in the results obtained using various methods of analysis.

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CuIn1-xAlxSe2 (CIAS) thin films were grown on the flexible stainless steel substrates, by de co-sputtering from the elemental cathodes. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport and vacuum evaporation of Se. X-ray diffraction, scanning electron microscopy and UV-visible absorption spectroscopy were used to characterize the selenized films The composition (x=Al/Al+In) with 0 <= x <= 0.65 was varied by substituting Al with indium in CuInSe2. Lattice parameters, average crystallite sizes and compact density of the films compared to CuInSe2, decreased and (112) peak shifted to higher Bragg's angle, with Al incorporation. Cells were fabricated with the device structure SS/Mo/CIAS/CdS/iZno-AZO/Al. Best cell showed the efficiency of 6.8%, with x=0.13, Eg=1.17 eV, fill factor 45.04, short circuit current density J 30 mA/cm(2).

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A label-free biosensor has been fabricated using a reduced graphene oxide (RGO) and anatase titania (ant-TiO2) nanocomposite, electrophoretically deposited onto an indium tin oxide coated glass substrate. The RGO-ant-TiO2 nanocomposite has been functionalized with protein (horseradish peroxidase) conjugated antibodies for the specific recognition and detection of Vibrio cholerae. The presence of Ab-Vc on the RGO-ant-TiO2 nanocomposite has been confirmed using electron microscopy, Fourier transform infrared spectroscopy and electrochemical techniques. Electrochemical studies relating to the fabricated Ab-Vc/RGO-ant-TiO2/ITO immunoelectrode have been conducted to investigate the binding kinetics. This immunosensor exhibits improved biosensing properties in the detection of Vibrio cholerae, with a sensitivity of 18.17 x 10(6) F mol(-1) L-1 m(-2) in the detection range of 0.12-5.4 nmol L-1, and a low detection limit of 0.12 nmol L-1. The association (k(a)), dissociation (k(d)) and equilibrium rate constants have been estimated to be 0.07 nM, 0.002 nM and 0.41 nM, respectively. This Ab-Vc/RGO-ant-TiO2/ITO immunoelectrode could be a suitable platform for the development of compact diagnostic devices.

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The impact of indium tin oxide (ITO) layers over vertically aligned zinc oxide nanorods (ZnO NRs) has been investigated to consider ITO nanolayers as transparent conducting oxide electrodes (TCOE) for hierarchical heteronanostructure solar cell devices that have ZnO nanostructures as branches. ZnO/ITO core/shell nanostructures were prepared in two- steps using vapor-liquid-solid and evaporation processes, and further the structures were annealed at various temperatures. Transmission electron microscopic studies show that the as-grown ZnO/ITO structures consist of an amorphous ITO shell on single crystalline ZnO cores, whereas the structures annealed above 300 degrees C consist of a single crystalline ITO shell. ITO layer deposited ZnO NRs exhibit a small red-shift in ZnO near-band-edge emission as well as optical band gap. The electrical measurements carried out on single ZnO/ITO core/shell NR under dark and UV light showed excellent thermionic transport properties. From these investigations it is emphasized that ITO nanolayers could be used as TCO electrodes for prototype ZnO based hierarchical solar cell devices.

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Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 degrees C shows better crystallinity with the rocking curve FWHM 0.67 degrees and 0.85 degrees along 0 0 0 1] and 1 - 1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room temperature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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The room temperature ferromagnetic behavior of InN nanosfructures grown by molecular beam epitaxy (MBE) is explored by means of magnetization measurements. The saturation magnetization and remanent magnetization are found to be strongly dependent on the size of the nanostructures. This suggests that the ferromagnetism is essentially confined to the surface of the nanostructures due to the possible defects. Raman spectroscopy shows the existence of indium vacancies which could be the source of ferromagnetic ordering in InN nanostructures.

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InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be similar to 2.48 eV: The current-voltage (I-V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log-log plot of the I-V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film. (C) 2014 Elsevier Ltd. All rights reserved.

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In order to study cell electroporation in situ, polymer devices have been fabricated from poly-dimethyl siloxane with transparent indium tin oxide parallel plate electrodes in horizontal geometry. This geometry with cells located on a single focal plane at the interface of the bottom electrode allows a longer observation time in both transmitted bright-field and reflected fluorescence microscopy modes. Using propidium iodide (PI) as a marker dye, the number of electroporated cells in a typical culture volume of 10-100 mu l was quantified in situ as a function of applied voltage from 10 to 90 V in a series of 2-ms pulses across 0.5-mm electrode spacing. The electric field at the interface and device current was calculated using a model that takes into account bulk screening of the transient pulse. The voltage dependence of the number of electroporated cells could be explained using a stochastic model for the electroporation kinetics, and the free energy for pore formation was found to be kT at room temperature. With this device, the optimum electroporation conditions can be quickly determined by monitoring the uptake of PI marker dye in situ under the application of millisecond voltage pulses. The electroporation efficiency was also quantified using an ex situ fluorescence-assisted cell sorter, and the morphology of cultured cells was evaluated after the pulsing experiment. Importantly, the efficacy of the developed device was tested independently using two cell lines (C2C12 mouse myoblast cells and yeast cells) as well as in three different electroporation buffers (phosphate buffer saline, electroporation buffer and 10 % glycerol).

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One-dimensional (1D) zinc oxide (ZnO) hexagonal rods have been successfully synthesized by surfactant free hydrothermal process at different temperatures. It can be found that the reaction temperature play a crucial role in the formation of ZnO uniform hexagonal rods. The possible formation processes of 1-D ZnO hexagonal rods were investigated. The zinc hydroxide acts as the morphology-formative intermediate for the formation of ZnO nanorods. Upon excitation at 325 nm, the sample prepared at 180 degrees C show several emission bands at 400 nm (similar to 3.10 eV), 420 nm (similar to 2.95 eV), 482 nm (similar to 2.57 eV) and 524 nm (similar to 2.36 eV) corresponding to different kind of defects. TL studies were carried out by pre-irradiating samples with gamma-rays ranging from 1 to 7 kGy at room temperature. A well resolved glow peak at similar to 354 degrees C was recorded which can be ascribed to deep traps. Furthermore, the defects associated with surface states in ZnO nano-structures are characterized by electron paramagnetic resonance. (C) 2014 Elsevier B.V. All rights reserved.

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Here, the effect of micro-structured cathode material on the device performance of indium tin oxide/poly(3hexylethiophene)/copper diode (ITO/P3HT/Cu) is investigated. Two different forms of copper namely bulk metal (Cu{B}) and nanoparticle (Cu{N}) were used as top electrode to probe its effect on device performance. Crystallographic structure and nanoscale morphology of top Cu electrodes were characterized using X-ray diffraction and scanning electronmicroscopy. Electrode formed by evaporation of copper nanoparticle showed enhancement in current density. From capacitance based spectroscopy we observed that density of trap states in ITO/P3HT/copper larger size grain (Cu-LG) are one order greater than that in ITO/P3HT/copper smaller size grain (Cu-SG) device.

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In this paper we maximize the thermoelectric (TE) figure of merit, ZT, of n-type skutterudites, (In,Sr,Ba,Yb)(y)Co4Sb12, via three different routes: (i) find the optimum fraction of In as fourth filler (ii) check the influence of powder particle, grain, and crystallite size on the TE properties and (iii) check thermal stability. Filled n-type (Sr, Ba, Yb)(y)Co4Sb12 was mixed in three different proportions with In0.4Co4Sb12, ball milled (regular or high-energy (HB) ball milling) and hot-pressed. Particle size analyses and SEM pictures of the broken surfaces of the hot pressed samples document that only HB produces uniform particles/grains with average crystallite sizes similar to 100 nm, proven by transmission electron microscopy. X-ray Rietveld refinements combined with EDX indicate that in all cases indium entered the icosahedral voids of the skutterudite. Temperature dependent physical properties of all three regularly ball-milled samples show that increasing In-content infers an increasing electrical resistivity, increasing Seebeck coefficient but a decreasing total thermal conductivity. Although ZT (823 K) is in the same range as for the sample without In, the ZT values in the whole temperature range are higher and consequently the TE-conversion efficiency, eta is at least 10% higher. Annealing the samples at 600 degrees C for three days shows minor changes in structure and thermoelectric properties, indicating TE stability. The HB sample, due to uniformly small particles, equally sized grains and crystallites, exhibits a high power factor (4.4 mW/m K-2 at 730 K) and a very low thermal conductivity leading to an outstanding high ZT = 1.8 at 823 K (eta(max) = 17.5%). (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Lithium sodium titanate insertion-type anode has been synthesized by classical solid-state (dry) and an alternate solution-assisted (wet) sonochemical synthesis routes. Successful synthesis of the target compound has been realized using simple Na- and Li-hydroxide salts along with titania. In contrast to the previous reports, these energy-savvy synthesis routes can yield the final product by calcination at 650 -750 degrees C for limited duration of 1-10 h. Owing to the restricted calcination duration (dry route for 1-2 h and wet route for 1-5 h), they yield homogeneous nanoscale lithium sodium titanate particles. Sono-chemical synthesis reduces the lithium sodium titanate particle size down to 80-100 nm vis-a-vis solid-state method delivering larger (200-500 nm) particles. Independent of the synthetic methods, the end products deliver reversible electrochemical performance with reversible capacity exceeding 80 mAh.g(-1) acting as a 1.3 V anode for Li-ion batteries. (C) 2015 Elsevier B.V. All rights reserved.