Effect of extrusion ratio on the microstructure, texture and mechanical properties of (Mg/AZ91)(m)-SiCp composite

Cast Mg/SiCp and AZ91/SiCp composites were successfully hot extruded vis-a-vis cast and unreinforced Mg and AZ91 alloy up to low (R=15:1) and high (R=54:1) extrusion ratios at 350 degrees C. Significant matrix grain refinement was noticed after extrusion due to dynamic recrystallization; the degree of refinement being relatively higher for the two composites. The AZ91 based materials (AZ91 and AZ91/SiCp) exhibited comparatively finer grain size both in cast condition and after extrusion due to strong pinning effect from alloying elements as well as Mg17Al12 intermetallic phase. Compositional analyses eliminated the possibility of any interfacial reaction between matrix (Mg/AZ91) and second phase reinforcement (SiCp) in case of the composites. Texture evolution shows the formation of < 10 (1) over bar0 >parallel to ED texture fibre for all the materials after extrusion irrespective of SiCp addition or alloying which is primarily due to the deformation of the matrix phase. Micro-hardness did not significantly increased on extrusion in comparison to the respective cast materials for both composites and unreinforced alloys. Dynamic mechanical analysis, however, confirmed that the damping properties were affected by the extrusion ratio and to a lesser extent, due to the presence of second phase at room temperature as well as at higher temperature (300 degrees C). (C) 2014 Elsevier B.V. All rights reserved.

Narrow band gap conjugated polymer for improving the photovoltaic performance of P3HT:PCBM ternary blend bulk heterojunction solar cells

A new D-A structured conjugated polymer (PBDO-T-TDP) based on electron-rich benzo 1,2-b:4,5-b'] difuran (BDO) containing conjugated alkylthiophene side chains with an electron-deficient diketopyrrolopyrrole (DPP) derivative is designed and synthesized. The polymer shows a narrow band gap with broad UV-Visible absorption spectra, which is in contrast to that of the P3HT:PCBM binary blend. Furthermore, its energy levels can meet the energetic requirement of the cascaded energy levels of P3HT and PCBM. Therefore, PBDO-T-TDP is used as a sensitizer in P3HT: PCBM based BHJ solar cells and its effect on their photovoltaic properties was investigated by blending them together at various weight ratios. It is observed that the resulting ternary blend system exhibited a significant improvement in the device performance (similar to 3.10%) as compared with their binary ones (similar to 2.15%). Such an enhancement in the ternary blend system is ascribed to their balanced hole and electron mobility along with uniform distribution of PBDO-T-TDP in the blend system, as revealed by organic field effect transistors and AFM studies.

Studies on the effects of varying secondary gas properties in a low entrainment ratio supersonic ejector

A dilution cum purge ejector for application in fuel cells represents a domain of ejector operation involving low entrainment ratio with differing secondary and primary gas; which is hardly investigated and a cohesive design framework is not readily available. We comprehensively study a constant area ejector using analytical, experimental and numerical tools at low entrainment ratio (0.004-0.065) with Air, Helium and Argon as secondary gas while the primary gas is Air. For the first time, limits of operating parameters used in control volume method to design the ejector are found to be highly dependent on the secondary molecular weight. The entrainment ratio in the ejector (low for Helium and high for Argon) is affected by the molecular weight and the static pressure within the ejector (low for Air and high for Argon & Helium) by the gamma of the secondary gas. Sufficient suction pressure (0.3-0.55 bar) is generated by the ejector thereby preventing any backflow of secondary gas at all primary stagnation pressures (1.5, 2.2 and 3.1 bar). Numerical results agree well with experimental results. The ejector is shown to completely dilute and purge the secondary flow, meeting all key design requirements. (C) 2014 Elsevier Ltd. All rights reserved.

Eu3+-activated SrMoO4 phosphors for white LEDs applications: Synthesis and structural characterization

We report the synthesis of Eu3+-activated SrMoO4 phosphors by the facile nitrate-citrate gel combustion method. Powder XRD and Rietveld refinement data confirmed that these phosphors have a monophasic scheelite-type tetragonal structure with space group I4(1)/a (No. 88). FESEM micrographs indicate the agglomerated spherical particles. FTIR spectra showed four stretching and bending vibrational modes (2A(u) and 2E(u)). UV-Visible absorption spectroscopy illustrated that the optical band gap energy (E-g) values increase with increase in Eu3+ concentration. The host SrMoO4 phosphor exhibited an intense blue emission under UV excitation (368 nm). The Eu3+-activated SrMoO4 phosphors revealed characteristic luminescence due to Eu3+ ion corresponding to D-5(1) -> F-7(J) (J = 1,2) and D-5(0) -> F-7(J) (J = 1,2,3,4) transitions upon 465 nm excitation. The electric dipole transition located at 615 nm (D-5(0) -> F-7(2)) was stronger than the magnetic dipole transition located at 592 nm (D-5(0) -> F-7(1)). Intensity parameters (Omega(2), Omega(4)) and radiative properties such as transition probabilities (A(T)), radiative lifetime (tau(rad)) and branching ratio (beta) of Eu3+-activated SrMoO4 phosphors were calculated using the Judd-Ofelt theory. Based on the CIE chromaticity diagram, these phosphors can be promising materials for the development of blue and orange-red component in white LEDs. (C) 2015 Elsevier B.V. All rights reserved.

A gap theorem for Ricci-flat 4-manifolds

Let (M, g) be a compact Ricci-fiat 4-manifold. For p is an element of M let K-max(P) (respectively K-min(p)) denote the maximum (respectively the minimum) of sectional curvatures at p. We prove that if K-max(p) <= -cK(min)(P) for all p is an element of M, for some constant c with 0 <= c < 2+root 6/4 then (M, g) is fiat. We prove a similar result for compact Ricci-flat Kahler surfaces. Let (M, g) be such a surface and for p is an element of M let H-max(p) (respectively H-min(P)) denote the maximum (respectively the minimum) of holomorphic sectional curvatures at p. If H-max(P) <= -cH(min)(P) for all p is an element of M, for some constant c with 0 <= c < 1+root 3/2, then (M, g) is flat. (C) 2015 Elsevier B.V. All rights reserved.

PERCOLATION ON THE INFORMATION-THEORETICALLY SECURE SIGNAL TO INTERFERENCE RATIO GRAPH

We consider a continuum percolation model consisting of two types of nodes, namely legitimate and eavesdropper nodes, distributed according to independent Poisson point processes in R-2 of intensities lambda and lambda(E), respectively. A directed edge from one legitimate node A to another legitimate node B exists provided that the strength of the signal transmitted from node A that is received at node B is higher than that received at any eavesdropper node. The strength of the signal received at a node from a legitimate node depends not only on the distance between these nodes, but also on the location of the other legitimate nodes and an interference suppression parameter gamma. The graph is said to percolate when there exists an infinitely connected component. We show that for any finite intensity lambda(E) of eavesdropper nodes, there exists a critical intensity lambda(c) < infinity such that for all lambda > lambda(c) the graph percolates for sufficiently small values of the interference parameter. Furthermore, for the subcritical regime, we show that there exists a lambda(0) such that for all lambda < lambda(0) <= lambda(c) a suitable graph defined over eavesdropper node connections percolates that precludes percolation in the graphs formed by the legitimate nodes.

Novel Design of Honeycombs Using a Seamless Combination of Auxetic and Conventional Cores Toward Phononic Band Gap Engineering

A novel design for the geometric configuration of honeycombs using a seamless combination of auxetic and conventional cores- elements with negative and positive Possion ratios respectively, has been presented. The proposed design has been shown to generate a superior band gap property while retaining all major advantages of a purely conventional or purely auxetic honeycomb structure. Seamless combination ensures that joint cardinality is also retained. Several configurations involving different degree of auxeticity and different proportions auxetic and conventional elements have been analyzed. It has been shown that the preferred configurations open up wide and clean band gap at a significantly lower frequency ranges compared to their pure counterparts. In view of existence of band gaps being desired feature for the phononic applications, reported results might be appealing. Use of such design may enable superior vibration control as well. Proposed configurations can be made isovolumic and iso-weight giving designers a fairer ground of applying such configurations without significantly changing size and weight criteria.

Geomorphology reveals active decollement geometry in the central Himalayan seismic gap

The similar to 700-km-long ``central seismic gap'' is the most prominent segment of the Himalayan front not to have ruptured in a major earthquake during the last 200-500 yr. This prolonged seismic quiescence has led to the proposition that this region, with a population >10 million, is overdue for a great earthquake. Despite the region's recognized seismic risk, the geometry of faults likely to host large earthquakes remains poorly understood. Here, we place new constraints on the spatial distribution of rock uplift within the western similar to 400 km of the central seismic gap using topographic and river profile analyses together with basinwide erosion rate estimates from cosmogenic Be-10. The data sets show a distinctive physiographic transition at the base of the high Himalaya in the state of Uttarakhand, India, characterized by abrupt strike-normal increases in channel steepness and a tenfold increase in erosion rates. When combined with previously published geophysical imaging and seismicity data sets, we interpret the observed spatial distribution of erosion rates and channel steepness to reflect the landscape response to spatially variable rock uplift due to a structurally coherent ramp-flat system of the Main Himalayan Thrust. Although it remains unresolved whether the kinematics of the Main Himalayan Thrust ramp involve an emergent fault or duplex, the landscape and erosion rate patterns suggest that the decollement beneath the state of Uttarakhand provides a sufficiently large and coherent fault segment capable of hosting a great earthquake.

Effective Degradation of Aqueous Nitrobenzene Using the SrFeO3-delta Photocatalyst under UV Illumination and Its Kinetics and Mechanistic Studies

In this article, the SrFeO3-delta photocatalyst was synthesized by a solution combustion method and applied for the photocatalytic degradation of aqueous nitrobenzene in the presence and absence of H2O2. The SrFeO3-delta photocatalyst was characterized by XRD, FT-IR, FE-SEM, TEM, TG-DTG, XPS, and UV visible spectroscopy. The band gap energy of SrFeO3-delta was found to be 3.75 eV which lies in the UV region. The XPS results indicate that the oxidation state of Sr and Fe in SrFeO3-delta was 2+ and 3+, respectively, and the surface atomic ratio of Sr and Fe is 0.995. The photocatalytic activity reveals that the degradation of nitrobenzene over the SrFeO3-delta catalyst itself (UV/SFO) is superior compared to SrFeO3-delta in the presence of H2O2 (UV/SFO/H2O2) with a degradation efficiency of 99-96%. The degradation of nitrobenzene obeys first-order kinetics in both UV/SFO and UV/SFO/H2O2 processes. The decrease in degradation efficiency with UV/SFO/H2O2 was attributed due to the formation of strontium carbonate on the photocatalyst surface.

High aspect ratio, processable coordination polymer gel nanotubes based on an AIE-active LMWG with tunable emission

A new TPE based low molecular weight gelator (LMWG) which displays both AIE and MCIE phenomena in gel state has been synthesized. LMWG self-assembles to form 1D nanofibers which undergo morphology transformation to coordination polymer gel (CPG) nanotubes upon metal ion coordination. CPG shows enhanced mechanical stability along with tunable emission properties.

Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K2Cr8O16, which exhibits a temperature-dependent (T-dependent) paramagnetic-to-ferromagnetic- metal transition at T-C = 180 K and transforms into a ferromagnetic insulator below T-MI = 95 K. We observe clear T-dependent dynamic valence (charge) fluctuations from above T-C to T-MI, which effectively get pinned to an average nominal valence of Cr+3.75 (Cr4+:Cr3+ states in a 3:1 ratio) in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0) similar to 3.5(k(B)T(MI)) similar to 35 meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U similar to 4 eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr) and the half-metallic ferromagnetism in the t(2g) up-spin band favor a low-energy Peierls metal-insulator transition.

Intrinsic large gap quantum anomalous Hall insulators in LaX (X = Br,Cl,I)

We report a theoretical prediction of a new class of bulk and intrinsic quantum anomalous Hall (QAH) insulators LaX (X=Br, Cl, and I) via relativistic first-principles calculations. We find that these systems are innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit coupling, become QAH insulators. A low-energy multiband tight-binding model is developed to understand the origin of the QAH effect. Finally, integer Chern number is obtained via Berry phase computation for each two-dimensional plane. These materials have the added benefit of a sizable band gap of as large as similar to 25 meV, with the flexibility of enhancing it to above 75 meV via strain engineering. The synthesis of LaX materials will provide the impurity-free single crystals and thin-film QAH insulators for versatile experiments and functionalities.

SYNGAP1: Mind the Gap

A cardinal feature of early stages of human brain development centers on the sensory, cognitive, and emotional experiences that shape neuronal-circuit formation and refinement. Consequently, alterations in these processes account for many psychiatric and neurodevelopmental disorders. Neurodevelopment disorders affect 3-4% of the world population. The impact of these disorders presents a major challenge to clinicians, geneticists, and neuroscientists. Mutations that cause neurodevelopmental disorders are commonly found in genes encoding proteins that regulate synaptic function. Investigation of the underlying mechanisms using gain or loss of function approaches has revealed alterations in dendritic spine structure, function, and plasticity, consequently modulating the neuronal circuit formation and thereby raising the possibility of neurodevelopmental disorders resulting from synaptopathies. One such gene, SYNGAP1 (Synaptic Ras-GTPase-activating protein) has been shown to cause Intellectual Disability (ID) with comorbid Autism Spectrum Disorder (ASD) and epilepsy in children. SYNGAP1 is a negative regulator of Ras, Rap and of AMPA receptor trafficking to the postsynaptic membrane, thereby regulating not only synaptic plasticity, but also neuronal homeostasis. Recent studies on the neurophysiology of SYNGAP1, using Syngapl mouse models, have provided deeper insights into how downstream signaling proteins and synaptic plasticity are regulated by SYNGAP1. This knowledge has led to a better understanding of the function of SYNGAP1 and suggests a potential target during critical period of development when the brain is more susceptible to therapeutic intervention.

SYNGAP1: Mind the Gap

A cardinal feature of early stages of human brain development centers on the sensory, cognitive, and emotional experiences that shape neuronal-circuit formation and refinement. Consequently, alterations in these processes account for many psychiatric and neurodevelopmental disorders. Neurodevelopment disorders affect 3-4% of the world population. The impact of these disorders presents a major challenge to clinicians, geneticists, and neuroscientists. Mutations that cause neurodevelopmental disorders are commonly found in genes encoding proteins that regulate synaptic function. Investigation of the underlying mechanisms using gain or loss of function approaches has revealed alterations in dendritic spine structure, function, and plasticity, consequently modulating the neuronal circuit formation and thereby raising the possibility of neurodevelopmental disorders resulting from synaptopathies. One such gene, SYNGAP1 (Synaptic Ras-GTPase-activating protein) has been shown to cause Intellectual Disability (ID) with comorbid Autism Spectrum Disorder (ASD) and epilepsy in children. SYNGAP1 is a negative regulator of Ras, Rap and of AMPA receptor trafficking to the postsynaptic membrane, thereby regulating not only synaptic plasticity, but also neuronal homeostasis. Recent studies on the neurophysiology of SYNGAP1, using Syngapl mouse models, have provided deeper insights into how downstream signaling proteins and synaptic plasticity are regulated by SYNGAP1. This knowledge has led to a better understanding of the function of SYNGAP1 and suggests a potential target during critical period of development when the brain is more susceptible to therapeutic intervention.

Enhancing photoresponsivity using MoTe2-graphene vertical heterostructures

MoTe2 with a narrow band-gap of similar to 1.1 eV is a promising candidate for optoelectronic applications, especially for the near-infrared photo detection. However, the photo responsivity of few layers MoTe2 is very small (<1mAW(-1)). In this work, we show that a few layer MoTe2-graphene vertical heterostructures have a much larger photo responsivity of similar to 20mAW(-1). The trans-conductance measurements with back gate voltage show on-off ratio of the vertical transistor to be similar to(0.5-1) x 10(5). The rectification nature of the source-drain current with the back gate voltage reveals the presence of a stronger Schottky barrier at the MoTe2-metal contact as compared to the MoTe2-graphene interface. In order to quantify the barrier height, it is essential to measure the work function of a few layers MoTe2, not known so far. We demonstrate a method to determine the work function by measuring the photo-response of the vertical transistor as a function of the Schottky barrier height at the MoTe2-graphene interface tuned by electrolytic top gating. (C) 2016 AIP Publishing LLC.