Efficient generation and guiding of megaampere relativistic electron current by silicon nanowires

We demonstrate 30 times enhanced flux of relativistic electrons by a silicon nanowire coated target excited by 30 fs, 800 nm laser pulses at an intensity of 3 x 10(18) W cm(-2). A measurement of the megaampere electron current via induced megagauss magnetic field supports the enhancement feature observed in the electron energy spectrum. The relativistic electrons generated at the front of nanowire coated surface are shown to travel efficiently over 500 mu m in the insulating substrate. The enhanced hot electron temperature is explained using a simple model and is supported by recent simulations. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4729010]

Sensitive Liquid Chromatography-Tandem Mass Spectrometry Method for the Determination of Olanzapine in Human Urine

A sensitive and selective liquid chromatographic-tandem mass spectrometric (LC-MS-MS) method was developed to determine olanzapine (OLZ) in human urine. After solid-phase extraction with SPE cartridge, the urine sample was analysed on a C-18 column (Symmetry 3.5 mu m, 50 x 4.6 mm i.d) interfaced with a triple quadrupole tandem mass spectrometer. Positive electrospray ionization was employed as the ionization source. The mobile phase consisted of ammonium acetate (pH 7.8)-acetonitrile (10:90, v/v). The method was linear over a concentration range of 1-100 ngml(-1). The lower limit of quantitation was 1 ngml(-1). The intra-day and inter-day relative standard deviation across three validation runs over the entire concentration range was < 11.5 %. The accuracy determined at three concentrations (8.0, 50.0 and 85.0 ngml(-1) OLZ) was within +/- 1.21 % in terms of relative errors.

Synthesis and characterization of high molecular weight polyaniline for organic electronic applications

High molecular weight polyaniline (PANI) was synthesized by a combined procedure incorporating various synthesis methods. Temperature and open circuit potential of the reaction mixture were collected to monitor the reaction progress. The polymer is characterized by various techniques including gel permeation chromatography, dynamic light scattering, infrared spectroscopy, solid-state nuclear magnetic resonance, and differential scanning calorimetry for elucidating the molecular architecture obtained by this method. As-synthesized PANI was found to possess high molecular weight, reduced branching, reduced cross-linking, and to predominantly consist of linear polymer chains. This polymer was also found to be more stable in solution form. JV characteristics of as-synthesized PANI films indicate a high current density which is due to increased free pathways and less traps for the charge transport to occur in PANI films. POLYM. ENG. SCI., 2012. (C) 2012 Society of Plastics Engineers

Analysis of current voltage characteristics of MWIR homojunction photodiodes for uncooled operation

Dark currents n(+)/v/p(+) Hg0.69Cd0.Te-31 mid wave infrared photodiodes were measured at room temperature. The diodes exhibited negative differential resistance at room-temperature, but with increasing leakage currents as a function of reverse bias. The current-voltage characteristics were simulated and fitted by incorporating trap assisted tunneling via traps and Shockley-Read-Hall generation recombination process due to dislocations in the carrier transport equations. The thermal suppression of carriers was simulated by taking energy level of trap (E-t), trap density (N-t) and the doping concentrations of n(+) and v regions as fitting parameters. Values of E-t and N-t were 0.78E(g) and similar to 6-9 x 10(14) cm(-3) respectively for most of the diodes. Variable temperature current voltage measurements on variable area diode array (VADA) structures confirmed the fact that variation in zero bias resistance area product (R(0)A) is related to g-r processes originating from variation in concentration and kind of defects that intersect a junction area. (C) 2012 Elsevier B.V. All rights reserved.

Unstable m=1 modes of counter-rotating Keplerian discs

We study the linear m= 1 counter-rotating instability in a two-component, nearly Keplerian disc. Our goal is to understand these slow modes in discs orbiting massive black holes in galactic nuclei. They are of interest not only because they are of large spatial scale and can hence dominate observations but also because they can be growing modes that are readily excited by accretion events. Self-gravity being non-local, the eigenvalue problem results in a pair of coupled integral equations, which we derive for a two-component softened gravity disc. We solve this integral eigenvalue problem numerically for various values of mass fraction in the counter-rotating component. The eigenvalues are in general complex, being real only in the absence of the counter-rotating component, or imaginary when both components have identical surface density profiles. Our main results are as follows: (i) the pattern speed appears to be non-negative, with the growth (or damping) rate being larger for larger values of the pattern speed; (ii) for a given value of the pattern speed, the growth (or damping) rate increases as the mass in the counter-rotating component increases; (iii) the number of nodes of the eigenfunctions decreases with increasing pattern speed and growth rate. Observations of lopsided brightness distributions would then be dominated by modes with the least number of nodes, which also possess the largest pattern speeds and growth rates.

Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

In this report, the currentvoltage (IV) characteristics of Au/GaN Schottky diodes have been carried out in the temperature range of 300510?K. The estimated values of the Schottky-barrier height (SBH) and the ideality factor of the diodes based on the thermionic emission (TE) mechanism were found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The conventional Richardson plot of ln(Is/T2) versus 1/kT gives the SBH of 0.51?eV and Richardson constant value of 3.23?X?10-5?A?cm-2?K-2 which is much lower than the known value of 26.4?A?cm-2?K-2 for GaN. Such discrepancies of the SBH and Richardson constant value were attributed to the existence of barrier-height inhomogeneities at the Au/GaN interface. The modified Richardson plot of ln(Is/T2)q2 sigma 2/2k2T2 versus q/kT, by assuming a Gaussian distribution of barrier heights at the Au/GaN interface, provided the SBH of 1.47?eV and Richardson constant value of 38.8?A?cm-2?K-2. The temperature dependence of the barrier height is interpreted on the basis of existence of the Gaussian distribution of the barrier heights due to the barrier-height inhomogeneities at the Au/GaN interface.

Comments on ``Effects of current density on the formation and microstructure of Sn-9Zn, Sn-8Zn-3Bi and Sn-3Ag-0.5Cu solder joints''

Othman et al. (Intermetallics 2012;22:1-6) recently published a manuscript on ``Effects of current density on the formation and microstructure of Sn-9Zn, Sn-8Zn-3Bi and Sn-3Ag-0.5Cu solder joints''. We found problems in calculation of diffusion parameters. Even the comment on the formation of Cu5Zn8 instead of Cu6Sn5 is not correct. In this comment, we have explained the correct procedure to calculate the diffusion coefficients. Further, we have also explained the reason for the formation of Cu5Zn8 instead of Cu6Sn5 in the Cu/Sn-9Zn system. (C) 2012 Elsevier Ltd. All rights reserved.

Synthesis of zinc oxide porous structures by anodization with water as an electrolyte

We report a simple, reliable and one-step method of synthesizing ZnO porous structures at room temperature by anodization of zinc (Zn) sheet with water as an electrolyte and graphite as a counter electrode. We observed that the de-ionized (DI) water used in the experiment is slightly acidic (pH=5.8), which is due to the dissolution of carbon dioxide from the atmosphere forming carbonic acid. Porous ZnO is characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence (PL) studies. The current-transient measurement is carried out using a Gamry Instruments Reference 3000 and the thickness of the deposited films is measured using a Dektak surface profilometer. The PL, Raman and X-ray photoelectron spectroscopy are used to confirm the presence of ZnO phase. We have demonstrated that the hybrid structures of ZnO and poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) exhibit good rectifying characteristics. The evaluated barrier height and the ideality factor are 0.45 eV and 3.6, respectively.

High field carrier transport in graphene: Insights from fast current transient

In this work, we observe gate tunable negative differential conductance (NDC) and current saturation in single layer and bilayer graphene transistor at high source-drain field, which arise due to the interplay among (1) self-heating, (2) hot carrier injection, and (3) drain induced minority carrier injection. The magnitude of the NDC is found to be reduced for a bilayer, in agreement with its weaker carrier-optical phonon coupling and less efficient hot carrier injection. The contributions of different mechanisms to the observed results are decoupled through fast transient measurements with nanosecond resolution. The findings provide insights into high field transport in graphene. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4754103]

Perfect Static Balance of Linkages by Addition of Springs But Not Auxiliary Bodies

A linkage of rigid bodies under gravity loads can be statically counter-balanced by adding compensating gravity loads. Similarly, gravity loads or spring loads can be counterbalanced by adding springs. In the current literature, among the techniques that add springs, some achieve perfect static balance while others achieve only approximate balance. Further, all of them add auxiliary bodies to the linkage in addition to springs. We present a perfect static balancing technique that adds only springs but not auxiliary bodies, in contrast to the existing techniques. This technique can counter-balance both gravity loads and spring loads. The technique requires that every joint that connects two bodies in the linkage be either a revolute joint or a spherical joint. Apart from this, the linkage can have any number of bodies connected in any manner. In order to achieve perfect balance, this technique requires that all the spring loads have the feature of zero-free-length, as is the case with the existing techniques. This requirement is neither impractical nor restrictive since the feature can be practically incorporated into any normal spring either by modifying the spring or by adding another spring in parallel. DOI: 10.1115/1.4006521]

Space-vector-based hybrid pulse width modulation technique to reduce line current distortion in induction motor drives

Pulse width modulation (PWM) techniques involving different switching sequences are used in space vector-based PWM generation for reducing line current ripple in induction motor drives. This study proposes a hybrid PWM technique employing five switching sequences. The proposed technique is a combination of continuous PWM, discontinuous PWM (DPWM) and advanced bus clamping PWM methods. Performance of the proposed PWM technique is evaluated and compared with those of the existing techniques on a constant volts per hertz induction motor drive. In terms of total harmonic distortion in the line current, the proposed method is shown to be superior to both conventional space vector PWM (CSVPWM) and DPWM over a fundamental frequency range of 32-50 Hz at a given average switching frequency. The reduction in harmonic distortion is about 42% over CSVPWM at the rated speed of the drive.

Common Ground Method of Current Injection in Electrical Impedance Tomography

Surface electrodes are essentially required to be switched for boundary data collection in electrical impedance tomography (Ell). Parallel digital data bits are required to operate the multiplexers used, generally, for electrode switching in ELT. More the electrodes in an EIT system more the digital data bits are needed. For a sixteen electrode system. 16 parallel digital data bits are required to operate the multiplexers in opposite or neighbouring current injection method. In this paper a common ground current injection is proposed for EIT and the resistivity imaging is studied. Common ground method needs only two analog multiplexers each of which need only 4 digital data bits and hence only 8 digital bits are required to switch the 16 surface electrodes. Results show that the USB based data acquisition system sequentially generate digital data required for multiplexers operating in common ground current injection method. The profile of the boundary data collected from practical phantom show that the multiplexers are operating in the required sequence in common ground current injection protocol. The voltage peaks obtained for all the inhomogeneity configurations are found at the accurate positions in the boundary data matrix which proved the sequential operation of multiplexers. Resistivity images reconstructed from the boundary data collected from the practical phantom with different configurations also show that the entire digital data generation module is functioning properly. Reconstructed images and their image parameters proved that the boundary data are successfully acquired by the DAQ system which in turn indicates a sequential and proper operation of multiplexers.

Nearly constant switching frequency hysteresis current controller for general n-level inverter fed induction motor drive

A current-error space phasor based hysteresis controller with nearly constant switching frequency is proposed for a general n-level voltage source inverter fed three-phase induction motor drive. Like voltage-controlled space vector PWM (SVPWM), the proposed controller can precisely detect sub-sector changes and for switching it selects only the nearest switching voltage vectors using the information of the estimated fundamental stator voltages along α and β axes. It provides smooth transition between voltage levels, including operation in over modulation region. Due to adjacent switching amongst the nearest switching vectors forming a triangular sub-sector, in which tip of the fundamental stator voltage vector of the machine lies, switching loss is reduced while keeping the current-error space phasor within the varying parabolic boundary. Appropriate dimension and orientation of this parabolic boundary ensures similar switching frequency spectrum like constant switching frequency SVPWM-based induction motor (IM) drive. Inherent advantages of multi-level inverter and space phasor based current hysteresis controller are retained. The proposed controller is simulated as well as implemented on a 5-level inverter fed 7.5 kW open-end winding IM drive.