Induction reheating of A356.2 aluminum alloy and thixocasting as automobile component

The development work for producing an automobile component by thixocasting using A356.2 alloy was introduced. As the first step, the alloy was electromagnetically stirred and solidified to produce a billet with non-dendritic microstructure. The microstructure depended on several process parameters such as stirring intensity, stirring frequency, cooling rate, and melt initial superheat. Through a series of computational studies and controlled experiments, a set of process parameters were identified to produce the best microstructures. Reheating of a billet with non-dendritic microstructure to a semisolid temperature was the next step for thixo-casting of the components. The reheating process was characterized for various reheating cycles using a vertical-type reheating machine. The induction heating cycle was optimized to obtain a near-uniform temperature distribution in radial as well as axial direction of the billet, and the heating was continued until the liquid fraction reached about 50%. These parameters were determined with the help of a computational fluid dynamics (CFD) model of die filling and solidification of the semisolid alloy. The heated billets were subsequently thixo-cast into automobile components using a real-time controlled die casting machine. The results show that the castings are near net shape, free from porosity, good surface finish and have superior mechanical properties compared to those produced by conventional die casting processes using the same alloy.

Nanomechanical properties of silicon surfaces nanostructured by excimer laser

Excimer laser irradiation at ambient temperature has been employed to produce nanostructured silicon surfaces. Nanoindentation was used to investigate the nanomechanical properties of the deformed surfaces as a function of laser parameters, such as the angle of incidence and number of laser pulses at a fixed laser fluence of 5 J cm(-2). A single-crystal silicon 311] surface was severely damaged by laser irradiation and became nanocrystalline with an enhanced porosity. The resulting laser-treated surface consisted of nanometer-sized particles. The pore size was controlled by adjusting the angle of incidence and the number of laser pulses, and varied from nanometers to microns. The extent of nanocrystallinity was large for the surfaces irradiated at a small angle of incidence and by a high number of pulses, as confirmed by x-ray diffraction and Raman spectroscopy. The angle of incidence had a stronger effect on the structure and nanomechanical properties than the number of laser pulses.

High-Temperature (1023 K to 1273 K 750 degrees C to 1000 degrees C]) Plastic Deformation Behavior of B-Modified Ti-6Al-4V Alloys: Temperature and Strain Rate Effects

A minor addition of B to the Ti-6Al-4V alloy, by similar to 0.1 wt pct, reduces its as-cast prior beta grain size by an order of magnitude, whereas higher B content leads to the presence of in situ formed TiB needles in significant amounts. An experimental investigation into the role played by these microstructural modifications on the high-temperature deformation behavior of Ti-6Al-4V-xB alloys, with x varying between 0 wt pct and 0.55 wt pct, was conducted. Uniaxial compression tests were performed in the temperature range of 1023 K to 1273 K (750 degrees C to 1000 degrees C) and in the strain rate range of 10(-3) to 10(+1) s(-1). True stress-true strain responses of all alloys exhibit flow softening at lower strain rates and oscillations at higher strain rates. The flow softening is aided by the occurrence of dynamic recrystallization through lath globularization in high temperature (1173 K to 1273 K 900 degrees C to 1000 degrees C]) and a lower strain rate (10(-2) to 10(-3) s(-1)) regime. The grain size refinement with the B addition to Ti64, despite being marked, had no significant effect on this. Oscillations in the flow curve at a higher strain rate (10(0) to 10(+1) s(-1)), however, are associated with microstructural instabilities such as bending of laths, breaking of lath boundaries, generation of cavities, and breakage of TiB needles. The presence of TiB needles affected the instability regime. Microstructural evidence suggests that the matrix cavitation is aided by the easy fracture of TiB needles.

Lubricated Tribology of a Eutectic Aluminium-Silicon Alloy in the Ultra-Mild Wear and Mild Wear Regimes for Long Sliding Times

Aluminium-silicon alloy, an important material used for the construction of internal combustion engines, exhibit pressure induced distinct regimes of wear and friction; ultra-mild and mild. In this work the alloy is slid lubricated against a spherical steel pin at contact pressures characteristic of the two test regimes, at a very low sliding velocity. In both cases, the friction is controlled at the initial stages of sliding by the abrasion of the steel pin by the protruding silicon particles of the disc. The generation of nascent steel chips helps to breakdown the additive in the oil by a cationic exchange that yields chemical products of benefits to the tribology. The friction is initially controlled by abrasion, but the chemical products gain increasing importance in controlling friction with sliding time. After long times, depending on contact pressure, the chemical products determine sliding friction exclusively. In this paper, a host of mechanical and spectroscopic techniques are used to identify and characterize mechanical damage and chemical changes. Although the basic dissipation mechanisms are the same in the two regimes, the matrix remains practically unworn in the low-pressure ultra-mild wear regime. In the higher pressure regime at long sliding times a small but finite wear rate prevails. Incipient plasticity in the subsurface controls the mechanism of wear.

High-frequency capacitance-voltage characteristics of amorphous (undoped)/crystalline silicon heterostructures

A numerical procedure is presented for calculating high-frequency capacitance variation with bias in amorphous (undoped)/crystalline silicon heterojunction. The results of the model calculations using this procedure have been reported, for different p silicon substrates. These have been compared with the corresponding capacitance variations in the other limiting case, in which the heterostructure acts like an MIS structure. The effect of interface states on the capacitance characteristics has also been studied. In the second part, we report the results of 1 MHz capacitance measurements on various amorphous (undoped)/crystalline silicon heterostructures.

Microstructural changes induced by ternary additions in a hypo-eutectic titanium-silicon alloy

Hypo-eutectic Ti-6.5 wt % Si alloy modified by separate additions of misch metal and low surface tension elements (Na, Sr, Se and Bi) has been examined by microscopic study and thermal analysis. Addition of third element led to modification of microstructure with apparently no significant enhancement of tensile ductility, with the exception of bismuth. Bismuth enhanced the ductility of the alloy by a factor of two and elastic-plastic fracture toughness to 9 MPa m–1/2 from a value of almost zero. The improved ductility of bismuth modified alloy is attributed to the reduced interconnectivity of the eutectic suicide, absence of significant suicide precipitation in the eutectic region and increase in the volume fraction of uniformly distributed dendrites. These changes are accompanied by a decrease in the temperature of eutectic solidification.

Quasicrystals and their crystalline homologues in the Al-Mn-Cu ternary alloys

Electron diffraction and high-resolution electron microscopy have been employed to differentiate among icosahedral, decagonal and crystalline particles that occur in as-cast and rapidly solidified Al-Mn-Cu alloys. The resemblance between decagonal quasicrystals and crystals in their electron diffraction patterns is striking. The crystalline structure is based on the orthorhombic 'Al3Mn' structure, but also a new monoclinic phase called 'X' has been discovered and described here. The present observations are also closely related to the orthorhombic structures in Al60Mn11Ni4. The occurrence of fine-scale twinning and fragmentation into domains explains the complex diffraction effects.

Room temperature creep in amorphous alloys: Influence of initial strain and free volume

The role of imposed strain on the room temperature time-dependent deformation behavior of bulk metallic glasses (BMGs) was systematically investigated through spherical nanoindentation creep experiments. The results show that creep occurred even at very low strains within elastic regimes and, interestingly, a precipitous increase in creep rate was found in plastic regimes, with BMG that had a higher free volume exhibiting greater creep rates. The results are discussed in terms of prevailing mechanisms of elastic/plastic deformation of amorphous alloys. (c) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth. (C) 2010 Elsevier Ltd. All rights reserved.

Vapor-Pressure Of Calcium Corresponding To The Reduction Of Calcia By Aluminum

The equilibrium pressure of calcium corresponding to the reduction reaction 6CaO (s) + 2Al (l) half-arrow-right-over-half-arrow-left 3CaO.Al2O3 (s) + 3Ca (g) has been measured by Knudsen effusion - mass loss analysis in the temperature range 1190 - 1500 K. The measured vapour pressure can be expressed as a function of temperature by the relation: log p(Ca) (Pa) = -10,670/T + 9.267 The calcium generated is partially absorbed by aluminium to form an alloy. The equilibrium composition of the alloy at 1373 K was found to be 22 mol% Ca - 78 mol% Al. The measured vapour pressure is in good agreement with that computed from thermodynamic data.

A Comparative Study of the Effect of Metallic Au and ReO3 Nanoparticles on the Performance of Silicon Solar Cells

The influence of gold (similar to 35 nm diameter) as well as ReO3 (similar to 17 nm diameter) nanoparticles placed atop silicon photovoltaic devices on absorption and photocurrent generation has been investigated. The nanoparticles improve the power transmission into the semiconductor and consequently, the photocurrent response at wavelengths corresponding to plasmon absorption. An increase in short circuit current up to 4.5% under simulated solar irradiation was observed with the ReO3 nanoparticles, while the gold nanoparticles showed enhancements up to 6.5%. The increase in photocurrent is observed at wavelengths corresponding to the maxima in the surface plasmon resonance absorption spectra. (C) 2010 The Japan Society of Applied Physics

Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.