Growth and characteristics of amorphous Sb2Se3 thin films of various thicknesses for memory switching applications

Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrates at room temperature using thermal evaporation technique. The structural investigations revealed that the as-deposited films are amorphous in nature. The surface roughness of the films shows an increasing trend at higher thickness of the films. The surface roughness of the films shows an increasing trend at higher thickness of the films. Interference fringes in the transmission spectra of these films suggest that the films are fairly smooth and uniform. The optical absorption in Sb2Se3 film is described using indirect transition and the variation in band gaps is explained on the basis of defects and disorders in the chalcogenide systems. Raman spectrum confirms the increase of orderliness with film thickness. From the I-V characteristics, a memory type switching is observed whose threshold voltage increases with film thickness. (C) 2015 Elsevier B.V. All rights reserved.

Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor

A new physically based classical continuous potential distribution model, particularly considering the channel center, is proposed for a short-channel undoped body symmetrical double-gate transistor. It involves a novel technique for solving the 2-D nonlinear Poisson's equation in a rectangular coordinate system, which makes the model valid from weak to strong inversion regimes and from the channel center to the surface. We demonstrated, using the proposed model, that the channel potential versus gate voltage characteristics for the devices having equal channel lengths but different thicknesses pass through a single common point (termed ``crossover point''). Based on the potential model, a new compact model for the subthreshold swing is formulated. It is shown that for the devices having very high short-channel effects (SCE), the effective subthreshold slope factor is mainly dictated by the potential close to the channel center rather than the surface. SCEs and drain-induced barrier lowering are also assessed using the proposed model and validated against a professional numerical device simulator.

Colossal dielectric behavior of semiconducting Sr2TiMnO6 ceramics

Manganitelike double perovskite Sr2TiMnO6 (STMO) ceramics fabricated from the powders synthesized via the solid-state reaction route, exhibited dielectric constants as high as similar to 10(5) in the low frequency range (100 Hz-10 kHz) at room temperature. The Maxwell-Wagner type of relaxation mechanism was found to be more appropriate to rationalize such high dielectric constant values akin to that observed in materials such as KxTiyNi(1-x-y)O and CaCu3Ti4O12. The dielectric measurements carried out on the samples with different thicknesses and electrode materials reflected the influence of extrinsic effects. The impedance studies (100 Hz-10 MHz) in the 180-300 K temperature range revealed the presence of two dielectric relaxations corresponding to the grain boundary and the electrode. The dielectric response of the grain boundary was found to be weakly dependent on the dc bias field (up to 11 V/cm). However, owing to the electrode polarization, the applied ac/dc field had significant effect on the low frequency dielectric response. At low temperatures (100-180 K), the dc conductivity of STMO followed a variable range hopping behavior. Above 180 K, it followed the Arrhenius behavior because of the thermally activated conduction process. The bulk conductivity relaxation owing to the localized hopping of charge carriers obeyed the typical universal dielectric response.

Regolith mass balance inferred from combined mineralogical, geochemical and geophysical studies: Mule Hole gneissic watershed, South India

The aim of this study is to propose a method to assess the long-term chemical weathering mass balance for a regolith developed on a heterogeneous silicate substratum at the small experimental watershed scale by adopting a combined approach of geophysics, geochemistry and mineralogy. We initiated in 2003 a study of the steep climatic gradient and associated geomorphologic features of the edge of the rifted continental passive margin of the Karnataka Plateau, Peninsular India. In the transition sub-humid zone of this climatic gradient we have studied the pristine forested small watershed of Mule Hole (4.3 km(2)) mainly developed on gneissic substratum. Mineralogical, geochemical and geophysical investigations were carried out (i) in characteristic red soil profiles and (ii) in boreholes up to 60 m deep in order to take into account the effect of the weathering mantle roots. In addition, 12 Electrical Resistivity Tomography profiles (ERT), with an investigation depth of 30 m, were generated at the watershed scale to spatially characterize the information gathered in boreholes and soil profiles. The location of the ERT profiles is based on a previous electromagnetic survey, with an investigation depth of about 6 m. The soil cover thickness was inferred from the electromagnetic survey combined with a geological/pedological survey. Taking into account the parent rock heterogeneity, the degree of weathering of each of the regolith samples has been defined using both the mineralogical composition and the geochemical indices (Loss on Ignition, Weathering Index of Parker, Chemical Index of Alteration). Comparing these indices with electrical resistivity logs, it has been found that a value of 400 Ohm m delineates clearly the parent rocks and the weathered materials, Then the 12 inverted ERT profiles were constrained with this value after verifying the uncertainty due to the inversion procedure. Synthetic models based on the field data were used for this purpose. The estimated average regolith thickness at the watershed scale is 17.2 m, including 15.2 m of saprolite and 2 m of soil cover. Finally, using these estimations of the thicknesses, the long-term mass balance is calculated for the average gneiss-derived saprolite and red soil. In the saprolite, the open-system mass-transport function T indicates that all the major elements except Ca are depleted. The chlorite and biotite crystals, the chief sources for Mg (95%), Fe (84%), Mn (86%) and K (57%, biotite only), are the first to undergo weathering and the oligoclase crystals are relatively intact within the saprolite with a loss of only 18%. The Ca accumulation can be attributed to the precipitation of CaCO3 from the percolating solution due to the current and/or the paleoclimatic conditions. Overall, the most important losses occur for Si, Mg and Na with -286 x 10(6) mol/ha (62% of the total mass loss), -67 x 10(6) mol/ha (15% of the total mass loss) and -39 x 10(6) mol/ha (9% of the total mass loss), respectively. Al, Fe and K account for 7%, 4% and 3% of the total mass loss, respectively. In the red soil profiles, the open-system mass-transport functions point out that all major elements except Mn are depleted. Most of the oligoclase crystals have broken down with a loss of 90%. The most important losses occur for Si, Na and Mg with -55 x 10(6) mol/ha (47% of the total mass loss), -22 x 10(6) mol/ha (19% of the total mass loss) and -16 x 10(6) mol/ha (14% of the total mass loss), respectively. Ca, Al, K and Fe account for 8%, 6%, 4% and 2% of the total mass loss, respectively. Overall these findings confirm the immaturity of the saprolite at the watershed scale. The soil profiles are more evolved than saprolite but still contain primary minerals that can further undergo weathering and hence consume atmospheric CO2.

Colossal dielectric behavior of semiconducting $Sr_{2}TiMnO_{6}$ ceramics

Manganitelike double perovskite Sr2TiMnO6 (STMO) ceramics fabricated from the powders synthesized via the solid-state reaction route, exhibited dielectric constants as high as similar to 10(5) in the low frequency range (100 Hz-10 kHz) at room temperature. The Maxwell-Wagner type of relaxation mechanism was found to be more appropriate to rationalize such high dielectric constant values akin to that observed in materials such as KxTiyNi(1-x-y)O and CaCu3Ti4O12. The dielectric measurements carried out on the samples with different thicknesses and electrode materials reflected the influence of extrinsic effects. The impedance studies (100 Hz-10 MHz) in the 180-300 K temperature range revealed the presence of two dielectric relaxations corresponding to the grain boundary and the electrode. The dielectric response of the grain boundary was found to be weakly dependent on the dc bias field (up to 11 V/cm). However, owing to the electrode polarization, the applied ac/dc field had significant effect on the low frequency dielectric response. At low temperatures (100-180 K), the dc conductivity of STMO followed a variable range hopping behavior. Above 180 K, it followed the Arrhenius behavior because of the thermally activated conduction process. The bulk conductivity relaxation owing to the localized hopping of charge carriers obeyed the typical universal dielectric response.

Dynamic initiation toughness measu~ment using double Grooved discs

Among the multitude of test specimen geometries used for dynamic fiacture toughness evaluation, the most widely uscd specimen is lhc Chavpy specimen due its simple geomclry and availability of testing machines. The standard Chatpy specimen dimensions may llOl always give plane st~ain condilions and hence, it may be necessary Io coilduct lcs/s using specimens of dillEvcnt thicknesses to establish the plane strain K~a. An axisymmct/ic specimen, on the otlaev hand would always give flow constraints l~n a nominal specimen thickness i~rcspcctive of the test matctial. The notched disk specimen pVOl)oscd by Bcrn:ud ctal. [1] for static and dynamic initiation toughness measurement although p~ovicles plain-strain conditions, the crack plopagatcs at an angle to the direction of applied load. This makes inteq~retation of the test results difficult us it ~Ccluivcs ~actial slices to be cut fiom the fractured specimen to ascertain the angle o1 crack growth and a linite element model l~)r tl);t{ pa~ticulat ctack o~icntalion.

Application of Mathematical Programming to the Plywood Design and Manufacturing Problem

Plywood manufacture includes two fundamental stages. The first is to peel or separate logs into veneer sheets of different thicknesses. The second is to assemble veneer sheets into finished plywood products. At the first stage a decision must be made as to the number of different veneer thicknesses to be peeled and what these thicknesses should be. At the second stage, choices must be made as to how these veneers will be assembled into final products to meet certain constraints while minimizing wood loss. These decisions present a fundamental management dilemma. Costs of peeling, drying, storage, handling, etc. can be reduced by decreasing the number of veneer thicknesses peeled. However, a reduced set of thickness options may make it infeasible to produce the variety of products demanded by the market or increase wood loss by requiring less efficient selection of thicknesses for assembly. In this paper the joint problem of veneer choice and plywood construction is formulated as a nonlinear integer programming problem. A relatively simple optimal solution procedure is developed that exploits special problem structure. This procedure is examined on data from a British Columbia plywood mill. Restricted to the existing set of veneer thicknesses and plywood designs used by that mill, the procedure generated a solution that reduced wood loss by 79 percent, thereby increasing net revenue by 6.86 percent. Additional experiments were performed that examined the consequences of changing the number of veneer thicknesses used. Extensions are discussed that permit the consideration of more than one wood species.

Investigation of biferroic properties in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3â0.3PbTiO3 epitaxial bilayered heterostructures

Epitaxial bilayered thin films consisting of La0.6Sr0.4MnO3 (LSMO) and 0.7Pb(Mg1/3Nb2/3)O3â0.3PbTiO3 (PMN-PT) layers of relatively different thicknesses were fabricated on LaNiO3 coated LaAlO3 (100) single crystal substrates by pulsed laser ablation technique. The crystallinity, ferroelectric, ferromagnetic, and magnetodielectric properties have been studied for all the bilayered heterostructures. Their microstructural analysis suggested possible StranskiâKrastanov type of growth mechanism in the present case. Ferroelectric and ferromagnetic characteristics of these bilayered heterostructures over a wide range of temperatures confirmed their biferroic nature. The magnetization and ferroelectric polarization of the bilayered heterostructures were enhanced with increasing PMN-PT layer thickness owing to the effect of lattice strain. In addition, evolution of the ferroelectric and ferromagnetic properties of these heterostructures with changing thicknesses of the PMN-PT and LSMO layers indicated possible influence of several interfacial effects such as space charge, depolarization field, domain wall pinning, and spin disorder on the observed properties. Dielectric properties of these heterostructures studied over a wide range of temperatures under different magnetic field strengths suggested a possible role of elastic strain mediated magnetoelectric coupling behind the observed magnetodielectric effect in addition to the influence of rearrangement of the interfacial charge carriers under an applied magnetic field.

Cooling of a composite slab

A mixed boundary value problem associated with the diffusion equation, that involves the physical problem of cooling of an infinite parallel-sided composite slab, is solved completely by using the Wiener-Hopf technique. An analytical expression is derived for the sputtering temperature at the quench front being created by a cold fluid moving on the upper surface of the slab at a constant speed v. The dependence of the various configurational parameters of the problem under consideration, on the sputtering temperature, is rather complicated and representative tables of numerical values of this important physical quantity are prepared for certain typical values of these parameters. Asymptotic results in their most simplified forms are also obtained when (i) the ratio of the thicknesses of the two materials comprising the slab is very much smaller than unity, and (ii) the quench-front speed v is very large, keeping the other parameters fixed, in both the cases.

Spectroscopic ellipsometry investigations of the optical properties of manganese doped bismuth vanadate thin films

The optical properties of Bi(2)V(1-x)MnxO(5.5-x) (x=0.05, 0.1, 0.15 and 0.2 at.%) thin films fabricated by pulsed laser deposition on platinized Silicon Substrates were Studied in UV-visible spectral region (1.51-4.17 CV) using spectroscopic ellipsometry. The optical constants and thicknesses of these films have been obtained by fitting the ellipsometric data (Psi and Delta) using a multilayer four-phase model system and a relaxed Lorentz oscillator dispersion relation. The surface roughness and film thickness obtained by spectroscopic ellipsometry were found to be consistent with the results obtained by atomic force and scanning electron microscopy. The refractive index measured at 650 nm does not show any marginal increase with Mn content. Further, the extinction coefficient does not show much decrease with increasing Mn content. An increase in optical band gap energy from 2.52 to 2.77 eV with increasing Mn Content from x = 0.05 to 0.15 was attributed to the increase in oxygen ion vacancy disorder. (C) 2009 Elsevier Ltd. All rights reserved.

Studies on strontium titanate/barium zirconate superlattices

Artificial superlattices of SrTiO3 and BaZrO3 were grown epitaxially with different periodicities on SrRuO3 coated (00 1) SrTiO3 substrates by pulsed excimer laser ablation. Superlattices were structurally characterized by X-Ray theta-2 theta diffraction data. Electrical characterization was done in metal-insulation-metal configuration. Capacitance-voltage measurements showed limited amount of tunability. The DC field induced tunability has been observed to be sensitive to the periodicity of the superlattices, hence the effective strain present in the layers. Hysteretic behaviour in capacitance-voltage (C-V) and polarization versus electric field (P-E) results from the superlattices also indicate the sensitivity of the interfaces. Interfacial strain is supposed to be the most probable cause for such a behaviour which is also manifested in the variation of dielectric constant with individual layer thicknesses. (c) 2007 Elsevier Ltd. All rights reserved.

Surface instability of confined elastic bilayers: Theory and simulations

The surface of a soft elastic film becomes unstable and forms a self-organized undulating pattern because of adhesive interactions when it comes in contact proximity with a rigid surface. For a single film, the pattern length scale lambda, which is governed by the minimization of the elastic stored energy, gives lambda similar to 3h, where h is the film thickness. Based on a linear stability analysis and simulations of adhesion and debonding, we consider the contact instability of an elastic bilayer, which provides greater flexibility in the morphological control of interfacial instability. Unlike the case of a single film, the morphology of the contact instability patterns, debonding distance, and debonding force in a bilayer can be controlled in a nonlinear way by varying the thicknesses and shear moduli of the films. Interestingly, the pattern wavelength in a bilayer can be greatly increased or decreased compared to a single film when the adhesive contact is formed by the stiffer or the softer of the two films, respectively. In particular, lambda as small as 0.5h can be obtained. This indicates a new strategy for pattern miniaturization in elastic contact lithography.

Electron energy equation for an atomic radiating plasma

The electron-energy equation for an atomic radiating plasma is considered in this work. Using the atomic model of Bates, Kingston and McWhirter, the radiation loss-term valid for all optical thicknesses is obtained. A study of the energy gained by electrons in inelastic collisions shows that the radiation loss term can be neglected only for rapidly-decaying or fast-growing plasmas. Emission from optically thin plasmas is considered next and an exact expression is given for the total radiation loss in a recombination continuum. A derivation of the Kramers-Unsöld approximation is presented and the error involved in estimating the total emitted recombination radiation by this approximation is shown to be small.

Characterization of strain in Si1-xGex films using multiple angle of incidence ellipsometry

In this letter we characterize strain in Si1-xGex based heterojunction bipolar transistors and modulation doped field effect transistors grown by rapid thermal chemical vapor deposition exploiting the phenomenon of strain-induced birefringence. The technique used is multiple angle of incidence ellipsometry at a wavelength of 670 nm to measure the ordinary and extraordinary refractive indices of the Si1-xGex films. We report measurements on thin fully strained films (with thicknesses less than the critical thickness) with Ge concentration varying from 9% to 40% with an accuracy of the order of 1 part in 10(4) and propose an empirical relation between the difference in the ordinary and extraordinary refractive indices (deltan) and the Ge concentration (x) given by deltan(x)=0.18x-0.12x(2). (C) 2000 American Institute of Physics. [S0003-6951(00)03948-6].

Analytical modeling of quantum threshold voltage for triple gate MOSFET

In this work a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrodinger equation Proposed model is extended for short channel devices by including semi-empirical correction The impact of effective mass variation with film thicknesses is also discussed using the proposed model All models are fully validated against the professional numerical device simulator for a wide range of device geometries (C) 2010 Elsevier Ltd All rights reserved