Antimony-based type-II superlattice infrared detectors

Numerous applications within the mid- and long-wavelength infrared are driving the search for efficient and cost effective detection technologies in this regime. Theoretical calculations have predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II superlattice infrared detectors. Standard UV-based photolithography was used combined with chemical wet or dry etching techniques in order to fabricate antinomy-based type-II superlattice infrared detectors. Subsequently, Fourier transform infrared spectroscopy and radiometric techniques were applied for optical characterization in order to obtain a detector's spectrum and response, as well as the overall detectivity in combination with electrical characterization. Temperature dependent electrical characterization was used to extract information about the limiting dark current processes. This work resulted in the first demonstration of an InAs/GaSb type-II superlattice infrared photodetector grown by metalorganic chemical vapor deposition. A peak detectivity of 1.6x10^9 Jones at 78 K was achieved for this device with a 11 micrometer zero cutoff wavelength. Furthermore the interband tunneling detector designed for the mid-wavelength infrared regime was studied. Similar results to those previously published were obtained.

Absorption and luminescent excitation spectra of F and M centers in Kcl and NaF

Luminescent excitation spectra were measured for the F and M centers in KCl; in particular, for the F band, M band, and the M2 transition. In all 3 cases, the spectra were nearly double-Gaussian in shape, and the efficiency for luminescence was nearly independent of the wavelength of the exciting light. A comparison of the absorption spectrum with the excitation spectrum of the F-band region of crystals with M centers present and oriented provided further evidence for the existence of the M2 transition of van Doorn and Haven and of Okamoto, and against the energy transfer theory of Lambe and Compton. The efficiency for luminescence of the M center upon M-band excitation was equal to the efficiency for F centers in pulse-annealed crystals of low F-center concentrations. The ratio of the efficiencies of the Ml to M2 transitions was 1.2 ± .25. The oscillator strengths of 3 of the M-center transitions in KCl relative to the oscillator strength for the F center were found to be in better agreement with the results reported by Okamoto, than with the results reported by Delbecq. The polarization of luminescence of M centers in KCl was measured at right angles to the exciting light, and was found to agree with the predictions of the van Doorn-Haven model of the M center. In NaF crystals having no absorption bands to the red side of the M band, the absorption and excitation spectra of the M band were accurately double-Gaussian over a wide range of wavelengths; the efficiency of luminescence of the M center was independent of the wavelength of the exciting light in that range; and the polarization of luminescence upon M-band excitation agreed well with the calculations based on the van DoornHaven model of the M center, In crystals in which the F band was bleached sufficiently to make it smaller in absorption height than the M band, several new color centers appeared on the red side of the M band, in contrast to the results reported by Blum; in these crystals, the polarization of luminescence of the M center upon M-band excitation disagreed strongly with theory, even though the absorptions for the new color centers were small compared to the M-band absorption.