Influence of applied uniaxial stress upon the ultraviolet absorption bands in KBr and KI

The influence of uniaxial stress upon three types of imperfections occurring in the alkali halide crystal lattice has been investigated. The imperfections are the interstitial atom, the interstitial ion, and the negative ion vacancy. The interstitial atom, or H center, is a paraelastic defect which assumes a preferential crystal orientation in the field of an external mechanical stress. From the results of the reorientation kinetics - studies, it was possible to show that H centers are not stable in the KBr crystal lattice above 2SoK. At temperatures higher than 2SoK, the H centers are transformed into two new paraelastic defects, H(ii) and H(iii), possessing the same optical absorption band as the H center but differing both from the H' center and from each other in their reorientation kinetics. A study of the wavelength dependence of the H, H(ii), and VI (Na+) centers s~owed the 'existence of three similar-polarized transitions for each of these defects. One of these transitions, located at 230 run for all of the defects studied, was determined to be too high in energy to be explained by the simple X2 - level scheme. In addition, a comparison of various properties of the four defects indicates that the last three can be described as perturbed H centers. Dichroism measurements, performed as a function of temperature and wavelengt, h on the 230-nm I band in KBr, showed this band to be a composite of a band at 234 nm due to the I center and a band at 230 nm attributed to the H center. The I center dichroism was isolated and was observed under various experimental conditions. The results of these observations are consistent with a body-centered model for the I center in which the I-center absorption band is attributed to the excitation of a p-like electron on the interstitial Br- ion. Similar measurements were also perfonned on the a band in KI. The a-band dichroism measurements were found to be consistent with an electronic transition from an s-like ground state to a p-like excited state, indicating that the a center is best described as a quasi-molecule.

Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures

Photoemission techniques, utilizing a synchrotron light source, were used to analyze the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(lOO)-Ag interface, the CdTe(lOO)-Sb system, and the InSb(lOO)-Sn interface. High-energy electron diffraction was also employed to acquire information about of surface structure. A one-domain (2xl) structure was observed for the CdTe(lOO) surface. Analysis of photoemission spectra of the Cd 4d core level for this surface structure revealed two components resulting from Cd surface atoms. The total intensity of these components accounts for a full monolayer of Cd atoms on the surface. A structural model is discussed commensurate with these results. Photoemission spectra of the Cd and Te 4d core levels indicate that Ag or Sb deposited on the CdTe(l00)-(2xl) surface at room temperature do not bound strongly to the surface Cd atoms. The room temperature growth characteristics for these two elements on the CdTe(lOO)-(2xl) are discussed. The growth at elevated substrate temperatures was also studied for Sb deposition. The InSb(lOO) surface differed from the CdTe(lOO) surface. Using molecular beam epitaxy, several structures could be generated for the InSb(lOO) surface, including a c(8x2), a c(4x4), an asymmetric (lx3), a symmetric (lx3), and a (lxl). Analysis of photoemission intensities and line shapes indicates that the c(4x4) surface is terminated with 1-3/4 monolayers of Sb atoms. The c(8x2) surface is found to be terminated with 3/4 monolayer of In atoms. Structural models for both of these surfaces are proposed based upon the photoemission results and upon models of the similar GaAs(lOO) structures. The room temperature growth characteristics of grey Sn on the lnSb(lOO)-c(4x4) and InSb(l00)-c(8x2) surfaces were studied with photoemission. The discontinuity in the valence band maximum for this semiconductor heterojunction system is measured to be 0.40 eV, independent of the starting surface structure and stoichiometry. This result is reconciled with theoretical predictions for heterostructure behavior.