Studies of turbulent flows in continuous casting of steel with and without magnetic field

This thesis develops and tests various transient and steady-state computational models such as direct numerical simulation (DNS), large eddy simulation (LES), filtered unsteady Reynolds-averaged Navier-Stokes (URANS) and steady Reynolds-averaged Navier-Stokes (RANS) with and without magnetic field to investigate turbulent flows in canonical as well as in the nozzle and mold geometries of the continuous casting process. The direct numerical simulations are first performed in channel, square and 2:1 aspect rectangular ducts to investigate the effect of magnetic field on turbulent flows. The rectangular duct is a more practical geometry for continuous casting nozzle and mold and has the option of applying magnetic field either perpendicular to broader side or shorter side. This work forms the part of a graphic processing unit (GPU) based CFD code (CU-FLOW) development for magnetohydrodynamic (MHD) turbulent flows. The DNS results revealed interesting effects of the magnetic field and its orientation on primary, secondary flows (instantaneous and mean), Reynolds stresses, turbulent kinetic energy (TKE) budgets, momentum budgets and frictional losses, besides providing DNS database for two-wall bounded square and rectangular duct MHD turbulent flows. Further, the low- and high-Reynolds number RANS models (k-ε and Reynolds stress models) are developed and tested with DNS databases for channel and square duct flows with and without magnetic field. The MHD sink terms in k- and ε-equations are implemented as proposed by Kenjereš and Hanjalić using a user defined function (UDF) in FLUENT. This work revealed varying accuracies of different RANS models at different levels. This work is useful for industry to understand the accuracies of these models, including continuous casting. After realizing the accuracy and computational cost of RANS models, the steady-state k-ε model is then combined with the particle image velocimetry (PIV) and impeller probe velocity measurements in a 1/3rd scale water model to study the flow quality coming out of the well- and mountain-bottom nozzles and the effect of stopper-rod misalignment on fluid flow. The mountain-bottom nozzle was found more prone to the longtime asymmetries and higher surface velocities. The left misalignment of stopper gave higher surface velocity on the right leading to significantly large number of vortices forming behind the nozzle on the left. Later, the transient and steady-state models such as LES, filtered URANS and steady RANS models are combined with ultrasonic Doppler velocimetry (UDV) measurements in a GaInSn model of typical continuous casting process. LES-CU-LOW is the fastest and the most accurate model owing to much finer mesh and a smaller timestep. This work provided a good understanding on the performance of these models. The behavior of instantaneous flows, Reynolds stresses and proper orthogonal decomposition (POD) analysis quantified the nozzle bottom swirl and its importance on the turbulent flow in the mold. Afterwards, the aforementioned work in GaInSn model is extended with electromagnetic braking (EMBr) to help optimize a ruler-type brake and its location for the continuous casting process. The magnetic field suppressed turbulence and promoted vortical structures with their axis aligned with the magnetic field suggesting tendency towards 2-d turbulence. The stronger magnetic field at the nozzle well and around the jet region created large scale and lower frequency flow behavior by suppressing nozzle bottom swirl and its front-back alternation. Based on this work, it is advised to avoid stronger magnetic field around jet and nozzle bottom to get more stable and less defect prone flow.

Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide

Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique rema1ns inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system 1s installed along with a tunable dye laser, which provides resonant excitation. Donors 1n high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions 1n a high magnetic field and at liquid helium temperature. This technique 1s successfully used to identify donors 1n n-type GaAs as well as 1n p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (3ll)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) 1s investigated using photoluminescence. Si acceptors ~n MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor ~n high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.