Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.

In situ transmission electron microscopy ion irradiations of model iron-chromium alloys

Iron-chromium alloys are used as a model to study the microstructural evolution of defects in irradiated structural steel components of a nuclear reactor. We examine the effects of temperature and chromium concentration on the defect evolution and segregation behavior in the early stages of damage. In situ irradiations are conducted in a transmission electron microscope (TEM) at 300°C and 450°C with 150keV iron ions in single crystal Fe14Cr and Fe19Cr bicrystal to doses of 2E15 ions/cm^2. The microstructures resulting from annealing and irradiation of the alloy are characterized by analysis of TEM micrographs and diffraction patterns and compared with those of irradiated pure iron. We found the irradiation temperature to have little effect on the microstructural development. We also found that the presence of chromium in the sample leads to defect populations with small average loop size and no extended or nested loop structures, in contrast to the populations of large extended loops seen in irradiated pure iron. A very weak dependence was found on the specific chromium content of the alloy. Chromium was shown to suppress defect growth by inhibiting defect mobility in the alloy. While defects in pure iron are highly mobile and able to grow, those in the FeCr alloys remained small and relatively motionless due to the pinning effect of the chromium.