Idealized modeling of the role of stability and shear on mesoscale gravity wave evolution

Mesoscale Gravity Waves (MGWs) are large pressure perturbations that form in the presence of a stable layer at the surface either behind Mesoscale Convective Systems (MCSs) in summer or over warm frontal surfaces behind elevated convection in winter. MGWs are associated with damaging winds, moderate to heavy precipitation, and occasional heat bursts at the surface. The forcing mechanism for MGWs in this study is hypothesized to be evaporative cooling occurring behind a convective line. This evaporatively-cooled air generates a downdraft that then depresses the surface-based stable layer and causes pressure decreases, strong wind speeds and MGW genesis. Using the Weather Research and Forecast Model (WRF) version 3.0, evaporative cooling is simulated using an imposed cold thermal. Sensitivity studies examine the response of MGW structure to different thermal and shear profiles where the strength and depth of the inversion are varied, as well as the amount of wind shear. MGWs are characterized in terms of response variables, such as wind speed perturbations (U'), temperature perturbations (T'), pressure perturbations (P'), potential temperature perturbations (Θ'), and the correlation coefficient (R) between U' and P'. Regime Diagrams portray the response of MGW to the above variables in order to better understand the formation, causes, and intensity of MGWs. The results of this study indicate that shallow, weak surface layers coupled with deep, neutral layers above favor the formation of waves of elevation. Conversely, deep strong surface layers coupled with deep, neutral layers above favor the formation of waves of depression. This is also the type of atmospheric setup that tends to produce substantial surface heating at the surface.

Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.