Design and fabrication of electro-thermal microcantilevers for ultrafast molecular sorting and delivery

Improvements to the current state of the art in microfabricated cantilevers are investigated in order to realize enhanced functionality and increased versatility for use in ultrafast electrophoretic molecular sorting and delivery. Design rationale and fabrication process flow are described for six types of electro-thermal microcantilevers. Devices have been tailored for the process of separating mixtures of heterogeneous molecules into discrete detectable bands based on electrophoretic mobility, and delivering them to a conductive substrate using electric fields. Four device types include integrated heating elements capable of warming samples to catalyze reactions or cleaning the device for reuse. Similar devices have been shown to be capable of targeting temperatures between ambient conditions and the melting point of silicon, to within 0.1˚C precision or better. All microcantilevers types are equipped with a highly doped conductive silicon tip capable of interacting with a conductive substrate to deliver molecules under the presence of an electric field. Devices are equipped with additional electrodes to aid in sorting molecules on the surface of the probe end. Two designs contain two legs and one additional sorting electrode while four designs contain three legs and have two sorting electrodes. Devices having two sorting electrodes are designed to be capable of sorting three or more molecular species, a distinctive advancement in the state of the art. A detailed process flow of the fabrication process for all six electro-thermal cantilever designs are explained in detail.

Design and development of distributed feedback transistor lasers

The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and electrical-optical characteristics for direct “read-out” of its optical properties. These devices have demonstrated many useful features such as high-speed optical transmission without the limitations of resonance, non-linear mixing, frequency multiplication, negative resistance, and photon-assisted switching. To date, all of these devices operate as multi-mode lasers without any type of wavelength selection or stabilizing mechanisms. Stable single-mode distributed feedback diode laser sources are important in many applications including spectroscopy, as pump sources for amplifiers and solid-state lasers, for use in coherent communication systems, and now as TLs potentially for integrated optoelectronics. The subject of this work is to expand the future applications of the transistor laser by demonstrating the theoretical background, process development and device design necessary to achieve singlelongitudinal- mode operation in a three-port transistor laser. A third-order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength of 959.75 nm and threshold current of 13 mA operating at -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than 25 dB has been achieved.