Growth and application of planar III-V semiconductor nanowires grown with MOCVD

The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures with interesting optical, electrical, and mechanical properties. III-V nanowires in particular are useful because of their direct bandgap, high carrier mobility, and ability to form heterojunctions and have been used to make devices such as light-emitting diodes, lasers, and field-effect transistors. However, crystal defects are widely reported for III-V nanowires when grown in the common out-of-plane <111>B direction. Furthermore, commercialization of nanowires has been limited by the difficulty of assembling nanowires with predetermined position and alignment on a wafer-scale. In this thesis, planar III-V nanowires are introduced as a low-defect and integratable nanotechnology building block grown with metalorganic chemical vapor deposition. Planar GaAs nanowires grown with gold seed particles self-align along the <110> direction on the (001) GaAs substrate. Transmission electron microscopy reveals that planar GaAs nanowires are nearly free of crystal defects and grow laterally and epitaxially on the substrate surface. The nanowire morphology is shown to be primarily controlled through growth temperature and an ideal growth window of 470 +\- 10 °C is identified for planar GaAs nanowires. Extension of the planar growth mode to other materials is demonstrated through growth of planar InAs nanowires. Using a sacrificial layer, the transfer of planar GaAs nanowires onto silicon substrates with control over the alignment and position is presented. A metal-semiconductor field-effect transistor fabricated with a planar GaAs nanowire shows bulk-like low-field electron transport characteristics with high mobility. The aligned planar geometry and excellent material quality of planar III-V nanowires may lead to highly integrated III-V nanophotonics and nanoelectronics.

Design and development of distributed feedback transistor lasers

The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and electrical-optical characteristics for direct “read-out” of its optical properties. These devices have demonstrated many useful features such as high-speed optical transmission without the limitations of resonance, non-linear mixing, frequency multiplication, negative resistance, and photon-assisted switching. To date, all of these devices operate as multi-mode lasers without any type of wavelength selection or stabilizing mechanisms. Stable single-mode distributed feedback diode laser sources are important in many applications including spectroscopy, as pump sources for amplifiers and solid-state lasers, for use in coherent communication systems, and now as TLs potentially for integrated optoelectronics. The subject of this work is to expand the future applications of the transistor laser by demonstrating the theoretical background, process development and device design necessary to achieve singlelongitudinal- mode operation in a three-port transistor laser. A third-order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength of 959.75 nm and threshold current of 13 mA operating at -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than 25 dB has been achieved.