2 resultados para Prosthodontic rehabilitation of maxillary defects

em Illinois Digital Environment for Access to Learning and Scholarship Repository


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The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures with interesting optical, electrical, and mechanical properties. III-V nanowires in particular are useful because of their direct bandgap, high carrier mobility, and ability to form heterojunctions and have been used to make devices such as light-emitting diodes, lasers, and field-effect transistors. However, crystal defects are widely reported for III-V nanowires when grown in the common out-of-plane <111>B direction. Furthermore, commercialization of nanowires has been limited by the difficulty of assembling nanowires with predetermined position and alignment on a wafer-scale. In this thesis, planar III-V nanowires are introduced as a low-defect and integratable nanotechnology building block grown with metalorganic chemical vapor deposition. Planar GaAs nanowires grown with gold seed particles self-align along the <110> direction on the (001) GaAs substrate. Transmission electron microscopy reveals that planar GaAs nanowires are nearly free of crystal defects and grow laterally and epitaxially on the substrate surface. The nanowire morphology is shown to be primarily controlled through growth temperature and an ideal growth window of 470 +\- 10 °C is identified for planar GaAs nanowires. Extension of the planar growth mode to other materials is demonstrated through growth of planar InAs nanowires. Using a sacrificial layer, the transfer of planar GaAs nanowires onto silicon substrates with control over the alignment and position is presented. A metal-semiconductor field-effect transistor fabricated with a planar GaAs nanowire shows bulk-like low-field electron transport characteristics with high mobility. The aligned planar geometry and excellent material quality of planar III-V nanowires may lead to highly integrated III-V nanophotonics and nanoelectronics.

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The influence of uniaxial stress upon three types of imperfections occurring in the alkali halide crystal lattice has been investigated. The imperfections are the interstitial atom, the interstitial ion, and the negative ion vacancy. The interstitial atom, or H center, is a paraelastic defect which assumes a preferential crystal orientation in the field of an external mechanical stress. From the results of the reorientation kinetics - studies, it was possible to show that H centers are not stable in the KBr crystal lattice above 2SoK. At temperatures higher than 2SoK, the H centers are transformed into two new paraelastic defects, H(ii) and H(iii), possessing the same optical absorption band as the H center but differing both from the H' center and from each other in their reorientation kinetics. A study of the wavelength dependence of the H, H(ii), and VI (Na+) centers s~owed the 'existence of three similar-polarized transitions for each of these defects. One of these transitions, located at 230 run for all of the defects studied, was determined to be too high in energy to be explained by the simple X2 - level scheme. In addition, a comparison of various properties of the four defects indicates that the last three can be described as perturbed H centers. Dichroism measurements, performed as a function of temperature and wavelengt, h on the 230-nm I band in KBr, showed this band to be a composite of a band at 234 nm due to the I center and a band at 230 nm attributed to the H center. The I center dichroism was isolated and was observed under various experimental conditions. The results of these observations are consistent with a body-centered model for the I center in which the I-center absorption band is attributed to the excitation of a p-like electron on the interstitial Br- ion. Similar measurements were also perfonned on the a band in KI. The a-band dichroism measurements were found to be consistent with an electronic transition from an s-like ground state to a p-like excited state, indicating that the a center is best described as a quasi-molecule.